50RIA Series
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Medium Power Phase Control Thyristors
(Stud Version), 50 A
FEATURES
• High current rating
• Excellent dynamic characteristics
• dV/dt = 1000 V/μs option
• Superior surge capabilities
• Standard package
• Metric threads version available
• Types up to 1200 V VDRM/VRRM
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Phase control applications in converters
• Lighting circuits
• Battery charges
• Regulated power supplies and temperature and speed
control circuit
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
ELECTRICAL SPECIFICATIONS
Notes
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2) For voltage pulses with tp 5 ms
PRODUCT SUMMARY
Package TO-208AC (TO-65)
Diode variation Single SCR
IT(AV) 50 A
VDRM/VRRM 100 V to 1200 V
VTM 1.60 V
IGT 100 mA
TJ- 40 °C to 125 °C
TO-208AC (TO-65)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
50 A
TC94 °C
IT(RMS) 80 A
ITSM
50 Hz 1430 A
60 Hz 1490
I2t50 Hz 10.18 kA2s
60 Hz 9.30
VDRM/VRRM 100 to 1200 V
tqTypical 110 μs
TJ- 40 to 125 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE (1)
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE (2)
V
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
50RIA
10 100 150
15
20 200 300
40 400 500
60 600 700
80 800 900
100 1000 1100
120 1200 1300
50RIA Series
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Note
(1) Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. 50RIA120S90
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature IT(AV) 180° sinusoidal conduction 50 A
94 °C
Maximum RMS on-state current IT(RMS) 80 A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
1430
A
t = 8.3 ms 1490
t = 10 ms 100 % VRRM
reapplied
1200
t = 8.3 ms 1255
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
10.18
kA2s
t = 8.3 ms 9.30
t = 10 ms 100 % VRRM
reapplied
7.20
t = 8.3 ms 6.56
Maximum I2t for fusing I2tt = 0.1 to 10 ms, no voltage reapplied,
TJ = TJ maximum 101.8 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.94 V
High level value of threshold voltage VT(TO)2 ( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ maximum 1.08
Low level value of on-state
slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 4.08
m
High level value of on-state
slope resistance rt2 ( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ maximum 3.34
Maximum on-state voltage VTM Ipk = 157 A, TJ = 25 °C 1.60 V
Maximum holding current IHTJ = 25 °C, anode supply 22 V, resistive load,
initial IT = 2 A 200 mA
Latching current ILAnode supply 6 V, resistive load 400
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum rate of
rise of turned-on current
VDRM 600 V
dI/dt
TC = 125 °C, VDM = Rated VDRM,
Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum
ITM = (2 x rated dI/dt) A
200
A/μs
VDRM 1600 V 100
Typical delay time tdTC = 25 °C, VDM = Rated VDRM, ITM = 10 A dc resistive circuit
Gate pulse = 10 V, 15 source, tp = 20 μs 0.9
μs
Typical turn-off time tqTC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/μs
dIr/dt = - 10 A/μs, VR = 50 V 110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt
TJ = TJ maximum linear to 100 % rated VDRM 200
V/μs
TJ = TJ maximum linear to 67 % rated VDRM 500 (1)
50RIA Series
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Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10
W
Maximum average gate power PG(AV) 2.5
Maximum peak positive gate current IGM 2.5 A
Maximum peak positive gate voltage +VGM 20
V
Maximum peak negative gate voltage -VGM 10
DC gate current required to trigger IGT
TJ = - 40 °C
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied
250
mATJ = 25 °C 100
TJ = 125 °C 50
DC gate voltage required to trigger VGT
TJ = - 40 °C 3.5
V
TJ = 25 °C 2.5
DC gate current not to trigger IGD TJ = TJ maximum,
VDRM = Rated voltage
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
5.0 mA
DC gate voltage not to trigger VGD TJ = TJ maximum 0.2 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction and
storage temperature range TJ, TStg - 40 to
125 °C
Maximum thermal resistance,
junction to case RthJC DC operation 0.35
K/W
Maximum thermal resistance,
case to heatsink RthCS Mounting surface, smooth, flat and greased 0.25
Allowable mounting torque
Non-lubricated threads
3.4 + 0 - 10
%
(30) N · m
(lbf · in)
Lubricated threads
2.3 + 0 - 10
%
(20)
Approximate weight 28 g
1.0 oz.
Case style See dimensions - link at the end of datasheet TO-208AC (TO-65)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.078 0.057
TJ = TJ maximum K/W
120° 0.094 0.098
90° 0.120 0.130
60° 0.176 0.183
30° 0.294 0.296
50RIA Series
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Revision: 23-Apr-13 4Document Number: 93711
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
90
100
110
120
130
0 102030405060
30° 60° 90°
120°
180°
Average On-state Current (A)
Maxi mum Allowable Case Temperature (°C)
Conduction Angle
50RIA Series
R (DC) = 0.35 K/W
thJC
80
90
100
110
120
130
0 1020304050607080
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
50RIA Series
R (DC) = 0.35 K/W
thJC
0
10
20
30
40
50
60
70
80
0 1020304050
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
50RIA Series
T = 125°C
J
0
10
20
30
40
50
60
70
80
90
100
0 1020304050607080
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
50RIA Series
T = 125°C
J
600
700
800
900
1000
1100
1200
1300
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
50RIA Series
500
600
700
800
900
1000
1100
1200
1300
1400
1500
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
50RIA Series
50RIA Series
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Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
Fig. 9 - Gate Characteristics
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
50RIA Series
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJ-hs
Steady State Value
R = 0.35 K/W
thJ-hs
Transient Thermal Impedance Z (K/W)
50RIA Series
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b) (a)
Tj=25 °C
Tj=-40 °C
(1) (2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
tr<=1 µs
Rectangular gate pulse
rated di/dt : 20V, 30 ohms; tr<=0.5 µs
<=30% rated di/dt : 20V, 65 ohms
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2.5ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs
(3) (4)
Tj=125 °C
50RIA Series Frequency Limited by PG(AV)
50RIA Series
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ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95334
1- Current code
2- Essential part number
3- Voltage code x 10 = VRRM (see Voltage Ratings table)
4
5-None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A
M = Stud base TO-208AC (TO-65) M6 x 1
- Critical dV/dt:
None = 500 V/µs (standard value)
S90 = 1000 V/µs (special selection)
Device code
51324
50 RIA 120 S90 M
Document Number: 95334 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 08-Jul-08 1
TO-208AC (TO-65)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
5.1/7.6
(0.2/0.3)
Ø 4.1 (Ø 0.16)
Ø 1.5 (Ø 0.06)
3 MIN.
(0.118 MIN.)
2.5/3.6
(0.1/0.14)
Ø 15 (Ø 0.59)
1/4"-28UNF-2A
for metric device M6 x 1
1.7/1.8
(0.06/0.07)
2.7 (0.106)
31 MAX.
(1.22 MAX.)
Ø 19.2 (Ø 0.75)
10.7/11.5
(0.42/0.46)
22.4 MAX.
(0.88 MAX.)
14.5 MAX.
(0.57 MAX.)
Across flats
17.2/17.35
(0.67/0.68)
Legal Disclaimer Notice
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Revision: 02-Oct-12 1Document Number: 91000
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