PolarTM Power MOSFET HiPerFETTM IXFN36N110P VDSS = ID25 = RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M VGSS VGSM 1100V 36A 240m 300ns miniBLOC, SOT-227 B (IXFN) E153432 1100 1100 V V Continuous Transient 30 40 V V ID25 IDM TC = 25C TC = 25C, pulse width limited by TJM 36 110 A A IAR TC = 25C 18 A EAS TC = 25C 2 J dV/dt IS IDM, VDD VDSS, TJ 150C 20 V/ns PD TC = 25C 1000 W -55 ... +150 150 -55 ... +150 C C C Features 300 C * International standard package * Encapsulating epoxy meets 2500 3000 V~ V~ * miniBLOC with Aluminium nitride TJ TJM Tstg TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60Hz, RMS IISOL 1mA Md t = 1min t = 1s Mounting torque Terminal connection torque Weight 1.5/13 1.3/ 11.5 Nm/lb.in. Nm/lb.in. 30 g S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. UL 94 V-0, flammability classification isolation * Fast recovery diode * Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25C, unless otherwise specified) * Easy to mount * Space savings * High power density Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1100 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V Applications: 6.5 V 300 nA z A mA z TJ = 125C 50 4 VGS = 10V, ID = 0.5 * ID25, Note 1 240 m z z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters DS99902A (04/08) (c) 2008 IXYS Corporation, All rights reserved http://store.iiic.cc/ IXFN36N110P Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 * ID25, Note 1 20 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate input resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd SOT-227B Outline 32 S 23 nF 1240 pF 110 pF 0.85 60 ns 54 ns 94 ns 45 ns 350 nC 117 nC 157 nC 0.125 C/W RthJC RthCS C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 36 A Repetitive, pulse width limited by TJM 144 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 20A, -di/dt = 100A/s 2.3 16 VR= 100V, VGS = 0V C A Notes1: Pulse test, t 300s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN36N110P Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 40 90 VGS = 10V 7V 35 70 30 60 25 ID - Amperes ID - Amperes VGS = 10V 8V 80 20 6V 15 10 7V 50 40 30 6V 20 5 5V 10 0 5V 0 0 1 2 3 4 5 6 7 8 9 0 5 10 VDS - Volts 40 25 30 3.0 VGS = 10V 8V 35 2.8 RDS(on) - Normalized 7V 25 VGS = 10V 2.6 30 ID - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 18A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125C 20 15 6V 10 2.4 2.2 2.0 I D = 36A 1.8 1.6 I D = 18A 1.4 1.2 1.0 5 0.8 5V 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID = 18A Value vs. Drain Current 40 2.6 VGS = 10V 2.4 TJ = 125C 35 2.2 30 2.0 ID - Amperes RDS(on) - Normalized 15 VDS - Volts 1.8 1.6 25 20 15 1.4 10 1.2 TJ = 25C 5 1.0 0 0.8 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 TC - Degrees Centigrade ID - Amperes (c) 2008 IXYS Corporation, All rights reserved http://store.iiic.cc/ 100 125 150 IXFN36N110P Fig. 7. Input Admittance Fig. 8. Transconductance 65 80 60 70 55 50 40 g f s - Siemens ID - Amperes 45 TJ = - 40C 60 TJ = 125C 25C - 40C 35 30 25 50 25C 40 125C 30 20 20 15 10 10 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 8.5 10 20 30 VGS - Volts 40 50 60 70 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 16 90 14 VDS = 550V I D = 18A 80 I G = 10mA 12 VGS - Volts IS - Amperes 70 60 50 40 10 8 6 TJ = 125C 30 4 20 TJ = 25C 2 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 50 100 VSD - Volts 200 250 300 350 400 450 500 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 Ciss 10,000 Z(th)JC - C / W Capacitance - PicoFarads 150 1,000 Coss 0.100 0.010 100 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_36N110P(99) 04-01-08-A http://store.iiic.cc/