© 2008 IXYS Corporation, All rights reserved DS99902A (04/08)
VDSS = 1100V
ID25 = 36A
RDS(on) ≤≤
≤≤
≤ 240mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1100 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 1100 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C 36 A
IDM TC= 25°C, pulse width limited by TJM 110 A
IAR TC= 25°C 18 A
EAS TC= 25°C 2 J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns
PDTC= 25°C 1000 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL 1.6mm (0.062 in.) from case for 10s 300 °C
VISOL 50/60Hz, RMS t = 1min 2500 V~
IISOL ≤ 1mA t = 1s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.3/ 11.5 Nm/lb.in.
Weight 30 g
IXFN36N110P
G
D
S
S
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 1100 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ±30V, VDS = 0V ±300 nA
IDSS VDS = VDSS 50 μA
VGS = 0V TJ = 125°C 4 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 240 mΩ
PolarTM Power MOSFET
HiPerFETTM
Features
•International standard package
•Encapsulating epoxy meets
UL 94 V-0, flammability classification
•miniBLOC with Aluminium nitride
isolation
•Fast recovery diode
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
- easy to drive and to protect
Advantages
•Easy to mount
•Space savings
•High power density
Applications:
zHigh Voltage Switched-mode and
resonant-mode power supplies
zHigh Voltage Pulse Power Applications
zHigh Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
zHigh Voltage DC-DC converters
zHigh Voltage DC-AC inverters
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN36N110P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 20 32 S
Ciss 23 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1240 pF
Crss 110 pF
RGi Gate input resistance 0.85 Ω
td(on) 60 ns
tr 54 ns
td(off) 94 ns
tf 45 ns
Qg(on) 350 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 117 nC
Qgd 157 nC
RthJC 0.125 °C/W
RthCS 0.05 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 36 A
ISM Repetitive, pulse width limited by TJM 144 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 2.3 μC
IRM 16 A
Notes1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
SOT-227B Outline
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
IF = 20A, -di/dt = 100A/μs
VR= 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG= 1Ω (External)
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© 2008 IXYS Corporation, All rights reserved
IXFN36N110P
Fig. 1. Ou tp u t C har acteri sti cs
@ 25ºC
0
5
10
15
20
25
30
35
40
0123456789
VDS - V olts
ID - A m peres
V
GS
= 10V
7V
5
V
6
V
Fig. 2. Extended Output Characteristics
@ 25º C
0
10
20
30
40
50
60
70
80
90
0 5 10 15 20 25 30
VDS - Volts
ID - Am peres
V
GS
= 10V
8V
7
V
6
V
5
V
Fi g . 3. Outp u t C h ar acter i sti cs
@ 125ºC
0
5
10
15
20
25
30
35
40
02468101214161820
VDS - Volts
ID - A m peres
V
GS
= 10V
8V
5
V
7V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 18A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
RDS(on) - N orma lize d
V
GS
= 10V
I
D
= 36
A
I
D
= 18
A
Fig. 5. R
DS(on)
Normalized to I
D
= 18A Val u e
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0 102030405060708090
ID - Ampe res
RDS(on) - N ormalize d
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temp er at u r e
0
5
10
15
20
25
30
35
40
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
ID - A m peres
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN36N110P
IXYS REF: F_36N110P(99) 04-01-08-A
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
40
45
50
55
60
65
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
V
GS
- Vo lts
I
D
- A mp ere s
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
0 10203040506070
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltag e Drop of
Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
SD
- Volts
I
S
- Am peres
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350 400 450 500
Q
G
- Nan oCoul omb s
V
GS
- V o lts
V
DS
= 550V
I
D
= 18A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maximum Tr an sien t Ther mal
Impedance
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
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