VS-SD803C..C Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (Hockey PUK Version), 845 A FEATURES * * * * * * * * * * * * B-43 PRIMARY CHARACTERISTICS IF(AV) 845 A Package B-43 Circuit configuration Single High power fast recovery diode series 1.0 s to 1.5 s recovery time High voltage ratings up to 1600 V High current capability Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Press PUK encapsulation Hockey PUK version case style B-43 Maximum junction temperature 125 C Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS * Snubber diode for GTO * High voltage freewheeling diode * Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER VS-SD803C..C TEST CONDITIONS IF(AV) S15 845 845 A 55 55 C 1326 1326 A 25 25 C 50 Hz 11 295 11 295 60 Hz 11 830 11 830 50 Hz 640 640 60 Hz 583 583 Range 400 to 1000 1200 to 1600 V 1.0 1.5 s Ths IF(RMS) Ths IFSM I2t VRRM trr UNITS S10 TJ TJ 25 25 -40 to +125 -40 to +125 A A C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD803C..S10C VS-SD803C..S15C VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 IRRM MAXIMUM AT TJ = 125 C mA 45 Revision: 11-Jan-18 Document Number: 93180 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD803C..C Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at heatsink temperature TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled IF(AV) Maximum RMS forward current IF(RMS) Maximum peak, one-cycle forward, non-repetitive current 25 C heatsink temperature double side cooled t = 10 ms No voltage reapplied t = 8.3 ms IFSM Maximum I2t for fusing I2t Maximum I2t for fusing Low level of threshold voltage High level of threshold voltage Low level of forward slope resistance High level of forward slope resistance Maximum forward voltage drop I2t t = 10 ms 100 % VRRM reapplied t = 8.3 ms Sinusoidal half wave, initial TJ = TJ maximum t = 10 ms No voltage reapplied t = 8.3 ms t = 10 ms 100 % VRRM reapplied t = 8.3 ms t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum Ipk = 2655 A, TJ = TJ maximum tp = 10 ms sinusoidal wave VF(TO)1 VF(TO)2 rf1 rf2 VFM VALUES 845 (420) 55 (75) 1326 11 295 11 830 9500 9945 640 583 451 412 6400 1.02 1.32 0.38 0.28 1.89 UNITS A C A kA2s kA2s V mW V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 C CODE IFM Ipk SQUARE PULSE (A) trr AT 25 % IRRM (s) S10 TYPICAL VALUES AT TJ = 125 C TEST CONDITIONS dI/dt (A/s) trr AT 25 % IRRM (s) Vr (V) Irr (A) trr t dir dt 1.0 1000 S15 Qrr (C) 50 2.0 45 34 3.2 87 51 Qrr IRM(REC) -30 1.5 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, case junction to heatsink TEST CONDITIONS VALUES TJ -40 to 125 TStg -40 to 125 RthJ-hs DC operation single side cooled 0.076 DC operation double side cooled 0.038 Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet UNITS C K/W 9800 (1000) N (kg) 83 g B-43 RthJ-hs CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 0.006 0.008 0.010 0.015 0.026 0.007 0.008 0.010 0.015 0.026 0.005 0.008 0.011 0.016 0.026 0.005 0.008 0.011 0.016 0.026 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93180 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD803C..C Series 130 Vishay Semiconductors SD803C..C Series (Single Side Cooled) RthJ-hs (DC) = 0.076 K/ W 120 110 100 Conduction Angle 90 30 80 60 180 90 120 70 0 50 100 150 200 250 300 350 400 450 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) www.vishay.com 130 SD803C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.038 K/ W 120 110 100 90 Conduction Period 80 70 60 90 50 30 110 100 Conduction Period 90 30 60 90 120 180 DC 50 0 100 200 300 400 500 600 700 Maximum Average Forward Power Loss (W) Maximum Allowable Heatsink Temperature (C) SD803C..C Series (Single Side Cooled) RthJ-hs (DC) = 0.076 K/ W 60 0 100 Conduc tion Angle 90 70 30 60 90 120 180 60 600 800 1000 1200 1400 180 120 90 60 30 1400 1200 RMSLimit 1000 800 600 Conduction Angle 400 SD803C..C Series TJ = 125C 200 0 0 100 200 300 400 500 600 700 800 900 50 0 100 200 300 400 500 600 700 800 900 Average Forward Current (A) Fig. 3 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics Maximum Average Forward Power Loss (W) Maximum Allowable Heatsink Temperature (C) SD803C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.038 K/ W 110 80 400 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics 120 200 1600 Average Forward Current (A) 130 DC Fig. 4 - Current Ratings Characteristics 130 70 180 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 80 120 40 Average Forward Current (A) 120 60 2200 DC 180 120 90 60 30 2000 1800 1600 1400 1200 1000 RMS Limit 800 Conduction Period 600 400 SD803C..C Series TJ = 125C 200 0 0 200 400 600 800 1000 1200 1400 Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93180 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD803C..C Series 10000 Vishay Semiconductors At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @60 Hz 0.0083 s @50 Hz 0.0100 s 9000 8000 7000 6000 5000 SD803C..C Series 4000 1 10 100 Transient Thermal Impedance Z thJ-hs (K/ W) Peak Half Sine Wave Forward Current (A) www.vishay.com 0.1 SD803C..C Series 0.01 Steady State Value R thJ-hs = 0.076 K/ W (Single Side Cooled) R thJ-hs = 0.038 K/ W (Double Side Cooled) (DC Operation) 0.001 0.001 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. 11000 Initial TJ = 125C 10000 No Voltage Reapplied Rated VRRMReapplied 9000 8000 7000 6000 5000 4000 SD803C..C Series 3000 0.01 0.1 1 Pulse Train Duration (s) Instantaneous Forward Current (A) 10000 1000 TJ= 25C TJ= 125C SD803C..C Series 10 0 0.5 1 1.5 2 2.5 3 3.5 1 10 100 2.2 2.1 SD803C..S10C Series TJ= 125 C; V r = 30V I FM = 1000 A Square Pulse 2 1.9 500 A 1.8 1.7 250 A 1.6 10 100 Rate Of Fall Of Forward Current - di/dt (A/ s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double-Side Cooled 100 Maximum Reverse Recovery Time - Trr (s) 12000 0.1 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 4 4.5 Instantaneous Forward Voltage (V) Fig. 9 - Forward Voltage Drop Characteristics Fig. 11 - Recovery Time Characteristics Maximum Reverse Rec overy Charge - Qrr (C) Peak Half Sine Wave Forward Current (A) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double-Side Cooled 0.01 Square Wave Pulse Duration (s) Number Of Equa l Amplitude Half Cycle Current Pulses (N) 130 120 I FM = 1000 A Square Pulse 110 100 500 A 90 80 250 A 70 60 50 40 30 SD803C..S10C Series TJ = 125 C; Vr = 30V 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 12 - Recovery Charge Characteristics Revision: 11-Jan-18 Document Number: 93180 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD803C..C Series Vishay Semiconductors Maximum Reverse Recovery Charge - Qrr (C) Maximum Reverse Recovery Current - Irr (A) www.vishay.com 120 I FM = 1000 A 110 Square Pulse 100 500 A 90 80 250 A 70 60 50 40 30 SD803C..S10C Series TJ = 125 C; V r = 30V 20 10 10 20 30 40 50 60 70 80 90 100 200 I FM = 1000 A 180 Sq ua re Pulse 160 140 500 A 120 250 A 100 80 SD803C..S15C Series TJ= 125 C; V r = 30V 60 40 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 13 - Recovery Current Characteristics Fig. 15 - Recovery Charge Characteristics 4 Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Time - Trr (s) Rate Of Fall Of Forward Current - di/ dt (A/ s) SD803C..S15C Series TJ= 125 C; V r = 30V 3.5 I FM = 1000 A Square Pulse 3 500 A 2.5 250 A 2 10 100 140 I FM = 1000 A 130 Square Pulse 120 110 100 500 A 90 80 250 A 70 60 50 SD803C..S15C Series TJ= 125 C; V r = 30V 40 30 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/d t (A/ s) Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 14 - Recovery Time Characteristics Fig. 16 - Recovery Current Characteristics 1E4 10 20 joules p er pulse 20 joules per pulse Peak Forward Current (A) 4 1 2 2 10 1 0.4 0.4 0.2 1E3 4 0.2 0.1 0.1 0.04 0.04 0.02 0.01 1E2 tp 1E1 1E1 SD803C..S10C Series Sinusoidal Pulse TJ = 125C, VRRM = 800V d v/ d t = 1000V/ s 1E2 tp 1E3 Pulse Basewidth (s) 1E4 1E1 SD803C..S10C Series Trapezoidal Pulse TJ= 125C, VRRM = 800V d v/ dt = 1000V/ s; di/ dt=50A/ s 1E2 1E3 1E4 Pulse Basewidth (s) Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics Revision: 11-Jan-18 Document Number: 93180 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD803C..C Series www.vishay.com Vishay Semiconductors 1E4 10 20 joules per pulse 20 joules p er pulse 10 4 4 Peak Forward Current (A) 2 2 1 1 0.4 0.4 0.2 1E3 0.2 0.1 0.1 0.04 0.02 1E2 0.01 tp 1E1 1E1 SD803C..S15C Series Sinusoidal Pulse TJ = 125C, VRRM = 800V d v/ d t = 1000V/ s 1E2 SD803C..S15C Series Trapezoidal Pulse TJ = 125C, VRRM = 800V d v/ dt = 1000V/ s; di/ dt=50A/ s tp 1E3 1E1 1E4 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 18 - Maximum Total Energy Loss Per Pulse Characteristics ORDERING INFORMATION TABLE Device code VS- SD 80 3 C 16 S15 C 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Diode 3 - Essential part number 4 - 3 = fast recovery 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - trr code (see Recovery Characteristics table) 8 - C = PUK case B-43 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95249 Revision: 11-Jan-18 Document Number: 93180 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors B-43 DIMENSIONS in millimeters (inches) 42 (1.65) DIA. MAX. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 0.8 (0.03) MIN. both ends 25.3 (1) DIA. MAX. 2 places 15.4 (0.61) 14.4 (0.57) C A 40.5 (1.59) DIA. MAX. Note: A = Anode C = Cathode Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Revision: 12-Jul-17 Document Number: 95249 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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