BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMBT3906
Document number: BL/SSSTC062 www.galaxycn.com
Rev.A 1
FEATURES
z Epitaxial planar die construction. Pb
Lead-free
z Complementary NPN type available
(MMBT3904).
z Low Current (Max:-100mA).
z Low Voltage(Max:-40v).
APPLICATIONS
z Ideal for medium power amplification and switching SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBT3906 2A SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -40 V
VCEO collector-emitter voltage open base - -40 V
VEBO emitter-base voltage open collector - -6 V
ICcollector current (DC) - -100 mA
ICM peak collector current - -200 mA
IBM peak base current - -100 mA
Ptot total power dissipation Tamb≤25°C - 250 mW
Tstg storage temperature -65 +150 °C
Tjjunction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
Note Transistor mounted on an FR4 printed-circuit board.
BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMBT3906
Document number: BL/SSSTC062 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = -30 V - -50 nA
IEBO emitter cut-off current IC = 0; VEB = 6 V - -50 nA
hFE DC current gain
VCE = -1V;
IC= -0.1mA
IC = -1mA
IC = -10mA
IC = -50mA
IC = -100mA
60
80
100
60
30
-
-
300
-
-
IC = -10mA; IB = 1mA B- -200 mV
VCEsat
collector-emitter saturation
voltage IC = -50mA; IB = -5mA B- -300 mV
IC = -10mA; IB = -1mA B- -850 mV
VBEsat
base-emitter saturation
voltage IC = -50mA; IB = -5mA B- -950 mV
Cccollector capacitance IE = Ie= 0; VCB = -5 V;
f = 1 MHz - 4.5 pF
Ceemitter capacitance IC = Ic= 0; VEB = -500 mV;
f = 1 MHz - 10 pF
fTtransition frequency IC = -10mA; VCE = -20 V;
f = 100MHz 250 - MHz
NF noise figure IC = -100μA; VCE = -5V;
RS = 1 kΩ;f = 10Hz to15.7 kHz - 4 dB
Switching times (between 10% and 90% levels);
ton Turn-on time - 65 ns
tddelay time - 35 ns
trrise time - 35 ns
toff turn-off time - 300 ns
tsstorage time - 225 ns
trfall time
ICon= -10mA; IBon = -1mA;
IBoff= -1mA
- 75 ns
Note Pulse test: tp≤300 ms; d≤0.02.
BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMBT3906
Document number: BL/SSSTC062 www.galaxycn.com
Rev.A 3
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMBT3906
Document number: BL/SSSTC062 www.galaxycn.com
Rev.A 4
PACKAGE OUTLINE
Plastic surface mounted package SOT-23
SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
D
C
B
A
G
K
H
J
E
PACKAGE INFORMATION
Device Package Shipping
MMBT3906 SOT-23 3000/Tape&Reel
