2SK3703 Ordering number : EN7681B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3703 General-Purpose Switching Device Applications Features * * ON-resistance RDS(on)1=20m (typ.) 4V drive * Input capacitance Ciss=1780pF (typ.) Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) 60 ID IDP Drain Current (Pulse) PW10s, duty cycle1% V 20 V 30 A 120 A 2.0 W Allowable Power Dissipation PD 25 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS IAV 135 mJ 30 A Avalanche Current *2 Tc=25C Note : *1 VDD=20V, L=200H, IAV=30A (Fig.1) *2 L200H, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7529-001 * Package : TO-220F-3SG * JEITA, JEDEC : SC-67 * Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection 2 15.87 6.68 3.3 2.54 A 3.23 K3703 1 LOT No. 2.76 12.98 1.47 MAX DETAIL-A 0.8 1 2 3 FRAME EMC 2.54 2.54 3 (0.84) 0.5 ( 1.0) 15.8 2SK3703-1E 4.7 10.16 3.18 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3SG http://semicon.sanyo.com/en/network 51612 TKIM TC-00002747/72506QA MSIM TC-00000067/61504 TSIM TA-100813 No.7681-1/7 2SK3703 Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)2 ID=15A, VGS=4V Output Capacitance Coss Reverse Transfer Capacitance typ Unit max 60 VGS=16V, VDS=0V VDS=10V, ID=1mA RDS(on)1 Ciss min ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=15A ID=15A, VGS=10V Input Capacitance Ratings Conditions V 1 A 10 A 1.2 2.6 13 22 V S 20 26 m 28 40 m 1780 pF 266 pF Crss 197 pF Turn-ON Delay Time td(on) 16.5 ns Rise Time tr td(off) 110 ns 166 ns Turn-OFF Delay Time Fall Time VDS=20V, f=1MHz See Fig.2 tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=30V, VGS=10V, ID=30A IS=30A, VGS=0V Fig.1 Avalanche Resistance Test Circuit nC 6.5 nC 11.5 nC 1.0 1.2 V VDD=30V VIN 10V 0V 50 ID=15A RL=2 VIN D 2SK3703 VDD 50 ns 40 Fig.2 Switching Time Test Circuit L 10V 0V 144 VOUT PW=10s D.C.1% G 2SK3703 P.G 50 S Ordering Information Device 2SK3703-1E Package Shipping memo TO-220F-3SG 50pcs./magazine Pb Free No.7681-2/7 2SK3703 35 30 25 20 15 VGS=3V 25 20 15 5 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 Static-Drain-to-Source On-State Resistance, RDS(on) -- m 60 50 40 Tc=75C 25C --25C 20 10 0 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 5 Source Current, IS -- A C 25 C -25 =C Tc 75 7 5 3 2 3.5 4.0 4.5 5.0 IT05387 , 15A I D= 30 =4V V GS V 10 S= VG 5A, 1 I D= 20 10 --25 0 25 50 75 100 125 150 IT05389 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 1.0 7 5 0.1 3.0 Case Temperature, Tc -- C 7 10 40 5 3 2 2 2.5 50 0 --50 10 3 2.0 RDS(on) -- Tc IT05388 | yfs | -- ID 100 1.5 60 ID=15A 30 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 70 0.5 IT05386 5C 25 C --25 C 0.4 Tc= 7 0.2 25 C 5 0 Drain-to-Source Voltage, VDS -- V Static-Drain-to-Source On-State Resistance, RDS(on) -- m 30 10 0 Forward Transfer Admittance, | yfs | -- S 35 Tc= 75 --25 C C Drain Current, ID -- A 8V 40 10 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 3 5 0 Ciss, Coss, Crss -- pF 7 5 tr 3 2 1.2 IT05391 f=1MHz Ciss 2 tf 100 0.9 3 td(off) 2 0.6 Ciss, Coss, Crss -- VDS 5 VDD=30V VGS=10V 3 0.3 Diode Forward Voltage, VSD -- V IT05390 SW Time -- ID 5 Switching Time, SW Time -- ns Tc= --25 C 75 C 45 4V 40 Drain Current, ID -- A VDS=10V 6V V 10 45 ID -- VGS 50 Tc=25C 25 C ID -- VDS 50 1000 7 5 Coss Crss 3 2 td(on) 100 10 0.1 7 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT05392 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT05393 No.7681-3/7 2SK3703 VGS -- Qg 10 9 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 1000 7 5 3 2 VDS=30V ID=30A 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 Total Gate Charge, Qg -- nC 40 Operatuon in this area is limited by RDS(on). 1.5 1.0 0.5 op Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT16832 PD -- Tc 35 2.0 1 10 0ms 0m era s tio n s Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.0 7 5 3 2 0 s 1m DC 10 7 5 3 2 10 s 10 ID=30A IT05394 0 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 IT05397 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 IT05396 EAS -- Ta 120 Avalanche Energy derating factor -- % IDP=120A(PW10s) 100 7 5 3 2 0.1 0.1 PD -- Ta 2.5 ASO 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- C 150 175 IT10478 No.7681-4/7 2SK3703 Magazine Specification 2SK3703-1E No.7681-5/7 2SK3703 Outline Drawing 2SK3703-1E Mass (g) Unit 1.8 mm * For reference No.7681-6/7 2SK3703 Note on usage : Since the 2SK3703 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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