AON6236 40V N-Channel MOSFET General Description Product Summary VDS The AON6236 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. 40V 30A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 7m RDS(ON) (at VGS = 4.5V) < 10.5m 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 120 19 IDSM TA=70C 20 24 IDM TA=25C Units V 30 ID TC=100C Maximum 40 A 15 Avalanche Current C IAS 33 A Avalanche energy L=0.1mH C TC=25C EAS 54 mJ Power Dissipation B TA=25C Power Dissipation A Junction and Storage Temperature Range Rev 0: Oct. 2011 4.2 Steady-State Steady-State RJA RJC W 2.7 -55 to 150 TJ, TSTG Symbol t 10s W 15.5 PDSM TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 39 PD TC=100C Typ 24 53 2.6 www.aosmd.com C Max 30 64 3.2 Units C/W C/W C/W Page 1 of 6 AON6236 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250A 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 120 TJ=55C 100 nA 2.4 V 5.6 7 8.4 10.5 VGS=4.5V, ID=20A 8 10.5 m 80 1 V 30 A Static Drain-Source On-Resistance TJ=125C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 5 1.85 VGS=10V, ID=20A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 40 VDS=40V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=20V, f=1MHz A 0.72 m S 1225 pF 318 pF 26.5 pF 1.7 3.0 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 18.5 26 nC Qg(4.5V) Total Gate Charge 8.2 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A VGS=10V, VDS=20V, RL=1, RGEN=3 tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s IF=20A, dI/dt=500A/s 3.5 nC 2.5 nC 6 ns 2.8 ns 23.5 ns 3 ns 14 ns nC 32.5 A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Oct. 2011 www.aosmd.com Page 2 of 6 AON6236 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 4.5V 80 80 4.0V 6V 60 3.5V 40 125C ID(A) ID (A) 60 40 25C 20 20 VGS=3.0V 0 0 0 1 2 3 4 1 5 12 3 4 5 6 Normalized On-Resistance 1.8 10 VGS=4.5V RDS(ON) (m ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 6 VGS=10V 4 1.6 VGS=10V ID=20A 1.4 17 5 2 VGS=4.5V 10 1.2 ID=20A 1 0.8 2 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 20 1.0E+02 ID=20A 1.0E+01 40 1.0E+00 125C IS (A) RDS(ON) (m ) 15 10 1.0E-01 125C 1.0E-02 25C 1.0E-03 5 1.0E-04 25C 1.0E-05 0 0.0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Oct. 2011 0.2 0.4 0.6 0.8 1.0 1.2 4 www.aosmd.com VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6236 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=20V ID=20A 1400 Ciss 8 Capacitance (pF) VGS (Volts) 1200 6 4 1000 800 Coss 600 400 2 Crss 200 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 10 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 40 200 1000.0 RDS(ON) 10.0 100s 1.0 1ms 10ms DC TJ(Max)=150C TC=25C 0.1 TJ(Max)=150C TC=25C 160 10s Power (W) 10s 100.0 ID (Amps) 5 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJC=3.2C/W 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Oct. 2011 www.aosmd.com Page 4 of 6 AON6236 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100C 100 TA=150C 10 TA=125C 1 40 30 20 10 0 1 10 100 Time in avalanche, tA ( s) Figure 12: Single Pulse Avalanche capability (Note C) 1000 0 40 10000 30 1000 25 50 75 100 125 TCASE ( C) Figure 13: Power De-rating (Note F) 150 Power (W) Current rating ID(A) TA=25C 20 17 5 2 10 100 10 10 1 0 0 25 50 75 100 125 TCASE ( C) Figure 14: Current De-rating (Note F) 0.001 0.1 100 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 150 Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJA=64C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Oct. 2011 www.aosmd.com Page 5 of 6 AON6236 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: Oct. 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6