AON6236
40V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 30A
R
DS(ON)
(at V
GS
=10V) < 7mΩ
R
DS(ON)
(at V
GS
= 4.5V) < 10.5mΩ
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
The AON6236 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
R
DS(ON)
and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
40V
Drain-Source Voltage
40
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View Bottom View
V
DS
V
GS
I
DM
I
AS
E
AS
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
2.6 64
3.2
Power Dissipation
A
P
DSM
W
T
A
=70°C 2.7
T
A
=25°C 4.2
Continuous Drain
Current
G
W
39
T
C
=25°C 15.5
T
C
=100°C
Power Dissipation
B
P
D
19
A33
Avalanche energy L=0.1mH
C
A
T
A
=25°C I
DSM
A
T
A
=70°C
I
D
30
24
T
C
=25°C
T
C
=100°C 120Pulsed Drain Current
C
Parameter Typ Max
V
mJ
Avalanche Current
C
15
Continuous Drain
Current
54
30
V±20Gate-Source Voltage
Drain-Source Voltage
40
Maximum Junction-to-Ambient
°C/W
R
θJA
24
53
Units
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
Rev 0: Oct. 2011
www.aosmd.com Page 1 of 6
AON6236
Symbol Min Typ Max Units
BV
DSS
40 V
V
DS
=40V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1.4 1.85 2.4 V
I
D(ON)
120 A
5.6 7
T
J
=125°C 8.4 10.5
8 10.5 mΩ
g
FS
80 S
V
SD
0.72 1 V
I
S
30 A
C
iss
1225 pF
C
oss
318 pF
C
rss
26.5 pF
R
g
1.7 3.0 Ω
Q
g
(10V) 18.5 26 nC
Q
g
(4.5V) 8.2 12 nC
Q
gs
3.5 nC
Q
gd
2.5 nC
t
D(on)
6 ns
t
2.8
ns
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Gate-Body leakage current V
DS
=V
GS,
I
D
=250µA
V
DS
=0V, V
GS
=±20V
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
Forward Transconductance
mΩ
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
V
GS
=0V, V
DS
=0V, f=1MHz
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
I
DSS
µA
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
V
GS
=4.5V, I
D
=20A
R
DS(ON)
Static Drain-Source On-Resistance
Diode Forward Voltage
Reverse Transfer Capacitance
DYNAMIC PARAMETERS
Turn-On Rise Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Total Gate Charge
V
GS
=0V, V
DS
=20V, f=1MHz
V
=10V, V
=20V, R
=1
Ω
,
Gate resistance
SWITCHING PARAMETERS
Turn-On DelayTime
V
GS
=10V, V
DS
=20V, I
D
=20A
t
r
2.8
ns
t
D(off)
23.5 ns
t
f
3 ns
t
rr
14 ns
Q
rr
32.5 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
Turn-On Rise Time
Turn-Off Fall Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=20V, R
L
=1
Ω
,
R
GEN
=3Ω
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 0: Oct. 2011 www.aosmd.com Page 2 of 6
AON6236
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
20
40
60
80
100
1 2 3 4 5 6
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
2
4
6
8
10
12
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=20A
VGS=10V
ID=20A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=3.0V
3.5V
4.5V
6V
10V
4.0V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
0
5
10
15
20
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev 0: Oct. 2011 www.aosmd.com Page 3 of 6
AON6236
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 5 10 15 20
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
1600
0 5 10 15 20 25 30 35 40
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
Coss
Crss
VDS=20V
ID=20A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased
10µs
10ms
1ms
DC
RDS(ON)
TJ(Max)=150°C
TC=25°C
100
µ
40
(Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Safe Operating Area (Note F)
RθJC=3.2°C/W
Rev 0: Oct. 2011 www.aosmd.com Page 4 of 6
AON6236
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
10
20
30
40
50
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 13: Power De-rating (Note F)
0
10
20
30
40
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°
°°
°C)
Figure 14: Current De
-
rating (Note F)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction
-
to
-
TA=25°C
1
10
100
1000
1 10 100 1000
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TA=25°C
TA=150°C
TA=100°C
TA=125°C
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 14: Current De
-
rating (Note F)
Figure 15: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
RθJA=64°C/W
Rev 0: Oct. 2011 www.aosmd.com Page 5 of 6
AON6236
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev 0: Oct. 2011 www.aosmd.com Page 6 of 6