18071
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Document Number 82612
Rev. 1.5, 03-Jul-06
TFBS4710
Vishay Semiconductors
Serial Infrared Transceiver SIR, 115.2 kbit/s,
2.7 V to 5.5 V Operation
Description
The TFBS4710 is a low profile, full range Infrared
Data Transceiver module. It supports IrDA data rates
up to 115.2 kbit/s (SIR). The transceiver module con-
sists of a photo PIN photodiode, an infrared emitter
(IRED), and a low-power CMOS control IC to provide
a total front-end solution in a single package.
The device has a link distance of 1 meter. The RXD
pulse width is independent of the duration of TXD
pulse and always stays at a fixed width thus making
the device optimum for all standard SIR Encoder/
Decoder and interfaces. The Shut Down (SD) feature
cuts current consumption to typically 10 nA.
Features
• Compliant with the latest IrDA physical
layer
specification (9.6 kbit/s to 115.2 kbit/s)
• Small package:
H 2.74 mm x D 3.33 mm x L 8.96 mm
• Typical Link distance 1 m
• Drop in replacement for IRM5000D/ IRMT5000
• Battery & Power Management Features:
> Idle Current - 75 µA Typical
> Shutdown Current - 10 nA Typical
> Operates from 2.4 V - 5.0 V within specification
over full temperature range from - 25 °C to + 85 °C
• Remote Control - transmit distance up to 8 meters
• Tri-State Receiver Output, floating in shutdown
with a weak pull-up
• Fixed RXD output pulse width (2 µs typical)
• Meets IrFM Fast Connection requirements
• Split power supply, an independant, unregulated
supply for IRED Anode and a well regulated
supply for VCC
• Directly Interfaces with Various Super I/O and
Controller Devices and Encoder/ Decoder such as
TOIM4232
• Lead (Pb)-free device
• Qualified for lead (Pb)-free and Sn/Pb processing
(MSL4)
• Device in accordance to RoHS 2002/95/EC and
WEEE 202/96EC
Applications
• Ideal for Battery Operated Devices
• PDAs
• Mobile Phones
• Electronic Wallet (IrFM)
• Notebook Computers
• Digital Still and Video Cameras
• Printers, Fax Machines, Photocopiers,
Screen Projectors
• Data Loggers
• External Infrared Adapters (Dongles)
• Diagnostics Systems
• Medical and Industrial Data Collection Devices
• Kiosks, POS, Point and Pay Devices
• GPS
• Access Control
• Field Programming Devices
Parts Table
Part Description Qty / Reel
TFBS4710-TR1 Oriented in carrier tape for side view surface mounting 1000 pcs
TFBS4710-TT1 Oriented in carrier tape for top view surface mounting 1000 pcs
e4
TFBS4710
Document Number 82612
Rev. 1.5, 03-Jul-06
Vishay Semiconductors
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143
Functional Block Diagram
Pinout
TFBS4710
weight 100 mg
Definitions:
In the Vishay transceiver data sheets the following nomenclature is
used for defining the IrDA operating modes:
SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared
standard with the physical layer version IrPhy 1.0
MIR: 576 kbit/s to 1152 kbit/s
FIR: 4 Mbit/s
VFIR: 16 Mbit/s
MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy 1.2,
adding the SIR Low Power Standard. IrPhy 1.3 extended the Low
Power Option to MIR and FIR and VFIR was added with IrPhy 1.4.
A new version of the standard in any case obsoletes the former ver-
sion.
With introducing the updated versions the old versions are obso-
lete. Therefore the only valid IrDA standard is the actual version
IrPhy 1.4 (in Oct. 2002).
Pin Description
Controlled Driver
Push-Pull
Driver
GND
TXD
RXD
V
CC2
V
CC1
Amplifier Comparator
SD Logic
&
Control
RED C
18282
1 23456
18511
Pin Number Function Description I/O Active
1 IRED
Anode
IRED Anode is connected to a power supply. The LED current can be decreased
by adding a resistor in series between the power supply and IRED Anode. A
separate unregulated power supply can be used at this pin.
2 TXD This Input is used to turn on IRED transmitter when SD is low. An on-chip
protection circuit disables the LED driver if the TXD pin is asserted for longer than
80 µs
IHIGH
3 RXD Received Data Output, normally stays high but goes low for a fixed duration
during received pulses. It is capable of driving a standard CMOS or TTL load.
OLOW
4 SD Shutdown. Setting this pin active for more than 1.5 ms switches the device into
shutdown mode
IHIGH
5V
CC Regulated Supply Voltage
6 GND Ground
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Document Number 82612
Rev. 1.5, 03-Jul-06
TFBS4710
Vishay Semiconductors
Absolute Maximum Ratings
Reference Point Ground, Pin 6 unless otherwise noted.
Electrical Characteristics
Transceiver
Tamb = 25 °C, VCC = VIREDA = 2.4 V to 5.5 V unless otherwise noted.
Parameter Test Conditions Symbol Min Ty p. Max Unit
Supply voltage range, all states VCC - 0.3 + 6.0 V
Input current For all Pins except IRED Anode
Pin
ICC 10.0 mA
Output Sink Current, RXD 25.0 mA
Average output current, pin 1 20 % duty cycle IIRED (DC) 60 mA
Repetitive pulsed output current < 90 µs, ton < 20 % IIRED (RP) 300 mA
IRED anode voltage, pin 1 VIREDA - 0.5 + 6.0 V
Voltage at all inputs and outputs Vin > VCC is allowed VIN - 0.5 + 6.0 V
Power dissipation See derating curve 200 mW
Junction temperature 125 °C
Ambient temperature range
(operating)
Tamb - 30 + 85 °C
Storage temperature range Tstg - 40 + 100 °C
Soldering temperature See Recommended Solder
Profile
260 °C
Parameter Test Conditions Symbol Min Ty p. Max Unit
Supply voltage range, all states VCC 2.4 5.5 V
Idle supply current at VCC1
(receive mode, no signal)
SD = Low, Ee = 1 klx*),
Tamb = - 25 °C to + 85 °C,
VCC1 = VCC2 = 2.7 V to 5.5 V
ICC1 90 130 µA
SD = Low, Ee = 1 klx*),
Tamb = 25 °C,
VCC1 = VCC2 = 2.7 V to 5.5 V
ICC1 75 µA
Receive current VCC = 2.7 V ICC 280 µA
Shutdown current SD = High, T = 25 °C, Ee = 0 klx ISD 2µA
SD = High, T = 85 °C ISD 3µA
Operating temperature range TA- 25 + 85 °C
Output voltage low, RXD IOL = 1 mA VOL - 0.5 0.15 x VCC V
Output voltage high, RXD IOH = - 500 µA VOH 0.8 x VCC VCC + 0.5 V
IOH = - 250 µA VOH 0.9 x VCC VCC + 0.5 V
RXD to VCC impedance RRXD 400 500 600 kΩ
Input voltage low: TXD, SD VIL - 0.5 0.5 V
Input voltage high: TXD, SD CMOS level (0.5 x VCC typ,
threshold level)
VIH VCC - 0.5 6.0 V
Input leakage current (TXD, SD) Vin = 0.9 x VCC IICH - 2 + 2 µA
Controlled pull down current SD, TXD = "0" or "1",
0 < Vin < 0.15 VCC
IIRTx + 150 µA
SD, TXD = "0" or "1"
Vin > 0.7 VCC
IIRTx - 1 0 1 µA
Input capacitance CIN 5pF
TFBS4710
Document Number 82612
Rev. 1.5, 03-Jul-06
Vishay Semiconductors
www.vishay.com
145
Optoelectronic Characteristics
Receiver
Tamb = 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted
Transmitter
Tamb = 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted.
Parameter Test Conditions Symbol Min Typ. Max Unit
Minimum detection threshold
irradiance, SIR mode
9.6 kbit/s to 115.2 kbit/s
λ = 850 nm - 900 nm,
α = 0°, 15°
Ee10
(1.0)
25
(2.5)
40
(4)
mW/m2
(µW/cm2)
Maximum detection threshold
irradiance
λ = 850 nm - 900 nm Ee5
(500)
kW/m2
(mW/cm2)
Maximum no detection
threshold irradiance
Ee4
(0.4)
mW/m2
(µW/cm2)
Rise time of output signal 10 % to 90 %, CL = 15 pF tr(RXD) 10 100 ns
Fall time of output signal 90 % to 10 %, CL = 15 pF tf(RXD) 10 100 ns
RXD pulse width Input pulse width > 1.2 µs tPW 1.65 2.0 3.0 µs
Leading edge jitter Input Irradiance = 100 mW/m2,
≤ 115.2 kbit/s
250 ns
Standby /Shutdown delay After shutdown active 150 µs
Receiver startup time Power-on delay
Latency tL150 µs
Parameter Test Conditions Symbol Min Ty p. Max Unit
IRED operating current ID250 300 350 mA
IRED forward voltage Ir = 300 mA Vf1.4 1.8 1.9 V
IRED leakage current TXD = 0 V, 0 < VCC < 5.5 V IIRED - 1 1 µA
Output radiant intensity α = 0°, 15°, TXD = High,
SD = Low
Ie40 70 350 mW/sr
VCC = 5.0 V, α = 0°, 15°,
TXD = High or SD = High (Receiver
is inactive as long as SD = High)
Ie0.04 mW/sr
Output radiant intensity, angle of
half intensity
α± 24 °
Peak-emission wavelength λp880 900 nm
Spectral bandwidth Δλ 45 nm
Optical rise time tropt 10 100 ns
Optical fall time tfopt 10 100 ns
Optical output pulse duration Input pulse width 1.63 µs,
115.2 kbit/s
topt 1.46 1.63 1.8 µs
Input pulse width tTXD < 20 µs topt tTXD t + 0.15 µs
Input pulse width tTXD ≥ 20 µs topt 50 µs
Optical overshoot 25 %
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146
Document Number 82612
Rev. 1.5, 03-Jul-06
TFBS4710
Vishay Semiconductors
Recommended Solder Profiles
Solder Profile for Sn/Pb soldering
Lead (Pb)-Free, Recommended Solder Profile
The TFBS4710 is a lead (Pb)-free transceiver and
qualified for lead (Pb)-free processing. For lead
(Pb)-free solder paste like Sn(3.0-4.0)Ag(0.5-0.9)Cu,
there are two standard reflow profiles: Ramp-Soak-
Spike (RSS) and Ramp-To-Spike (RTS). The Ramp-
Soak-Spike profile was developed primarily for reflow
ovens heated by infrared radiation. With widespread
use of forced convection reflow ovens the Ramp-To-
Spike profile is used increasingly. Shown below in fig-
ure 2 is VISHAY's recommended profiles for use with
the TFBS4710 transceivers. For more details please
refer to Application note: SMD Assembly Instruction.
Wave Soldering
For TFDUxxxx and TFBSxxxx transceiver devices
wave soldering is not recommended.
Manual Soldering
Manual soldering is the standard method for lab use.
However, for a production process it cannot be rec-
ommended because the risk of damage is highly
dependent on the experience of the operator. Never-
theless, we added a chapter to the above mentioned
application note, describing manual soldering and
desoldering.
Storage
The storage and drying processes for all VISHAY
transceivers (TFDUxxxx and TFBSxxx) are equiva-
lent to MSL4.
The data for the drying procedure is given on labels
on the packing and also in the application note
"Taping, Labeling, Storage and Packing"
(http://www.vishay.com/docs/82601/82601.pdf).
Figure 1. Recommended Solder Profile for Sn/Pb soldering
0
20
40
60
80
100
120
140
160
180
200
220
240
260
0 50 100 150 200 250 300 350
Time/s
Temperat ure/°C
2...4 °C/s
2...4 °C/s
10 s max. at 230 °C
120 s...180 s
240 °C max.
90 s max.
19431
Figure 2. Solder Profile, RSS Recommendation
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
0 50 100 150 200 250 300 350
Time/s
Temperature/°C
20
s
2 °C...4 °C/s
2 °C...4 °C/s
90 s...120 s
T ≥ 217 °C for 50 s max
Tpeak = 260 °C max.
50 s max.
T ≥ 255 °C for 20 s max
19261
TFBS4710
Document Number 82612
Rev. 1.5, 03-Jul-06
Vishay Semiconductors
www.vishay.com
147
Recommended Circuit Diagram
The TFBS4710 integrates a sensitive receiver and a
built-in power driver. This combination needs a care-
ful circuit layout. The use of thin, long, resistive and
inductive wiring should be avoided. The inputs (TXD,
SD) and the output (RXD) should be directly (DC)
coupled to the I/O circuit.
The combination of resistor R1 and capacitors C1,
C2, C3 and C4 filter out any power supply noise to
provide a smooth supply voltage.
The placement of these components is critical. It is
strongly recommended to position C3 and C4 as
close as possible to the transceiver power supply
pins. A Tantalum capacitor should be used for C1 and
C3 while a ceramic capacitor should be used for C2
and C4.
A current limiting resistor is not needed for normal
operation. It is strongly recommended to use the Rled
values mentioned in Table 1 below for high tempera-
ture operation. For Low Power Mode, IRED Anode
voltage of less than 5 V is recommended.
Under extreme EMI conditions as placing a RF -
transmitter antenna on top of the transceiver, it is rec-
ommended to protect all inputs by a low-pass filter, as
a minimum a 12 pF capacitor, especially at the RXD
port.
Basic RF design rules for circuit design should be fol-
lowed. Especially longer signal lines should not be
used without proper termination. For reference see
"The Art of Electronics" by Paul Horowitz, Winfield
Hill, 1989, Cambridge University Press, ISBN:
0521370957.
Table 1.
High Operating Temperature > 70 °C
I/O and Software
In the description, already different I/Os are men-
tioned. Different combinations are tested and the
function verified with the special drivers available
from the I/O suppliers. In special cases refer to the I/
O manual, the Vishay application notes, or contact
directly Vishay Sales, Marketing or Application.
Table 2.
Recommended Application Circuit Com-
ponents
Figure 3. Recommended Application Circuit
VCC
Rled
R1= 47Ω
C1
4.7 µF
C2
0.1µF
C3
4.7 µF
C4
0.1 µF
IR Controller
IRRX
IRTX
IRMODE
Vdd
GND
Vcc (5)
SD (4)
GND (6)
RXD (3)
IREDA (1)
TXD (2)
TFBS4710
18281
Rled (Ω)Rled (Ω)
VLED
(V)
Standard Power Mode
(Intensity > 40 mW/sr,
0° - 15°)
Low Power Mode
(Intensity > 3.6 mW/sr,
0° - 15°)
2.7 3 50
3.3 6 > 50
5.0 18 > 60
Component Recommended Value Vishay Part Number
C1, C3 4.7 µF, 16 V 293D 475X9 016B
C2, C4 0.1 µF, Ceramic VJ 1206 Y 104 J XXMT
R1 47 Ω, 0.125 W CRCW-1206-47R0-F-RT1
Rled See Table 1
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Document Number 82612
Rev. 1.5, 03-Jul-06
TFBS4710
Vishay Semiconductors
Table 3.
Truth table
Package Dimensions
Drawing-No.: 6.550-5256.01-4
Issue: 1; 24.06.03
Inputs Outputs Remark
SD TXD Optical input Irradiance
mW/m2
RXD Transmitt
er
Operation
high
> 1 ms
x x weakly pulled
(500 Ω) to VCC1
0 Shutdown
low high x high inactive IeTransmitting
high
> µs
x high inactive 0 Protection is active
low < 4 high inactive 0 Ignoring low signals below the
IrDA defined threshold for noise
immunity
low > Min. Detection Threshold Irradiance
< Max. Detection Threshold Irradiance
low (active) 0 Response to an IrDA compliant
optical input signal
low > Max. Detection Threshold Irradiance undefined 0 Overload conditions can cause
unexpected outputs
18086
Figure 4. Package drawing TFBS4710
TFBS4710
Document Number 82612
Rev. 1.5, 03-Jul-06
Vishay Semiconductors
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149
Reel Dimensions
14017
Drawing-No.: 9.800-5090.01-4
Issue: 1; 29.11.05
Tape Width A max. N W1 min. W2 max. W3 min. W3 max.
mm mm mm mm mm mm mm
16 330 50 16.4 22.4 15.9 19.4
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150
Document Number 82612
Rev. 1.5, 03-Jul-06
TFBS4710
Vishay Semiconductors
Tape Dimensions
Drawing-No.: 9.700-5299.01-4
Issue: 1; 18.08.05
19611
Figure 5. Tape drawing for TFBS4710 for side view mounting
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Document Number 82612
Rev. 1.5, 03-Jul-06
VISHAY
TFBS4710
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
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Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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