Nov-27-2003
1
BCR101...
NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ )
BCR101F/L3
BCR101T
EHA07184
3
21
C
EB
R1
R2
Type Marking Pin Configuration Package
BCR101F*
BCR101L3*
BCR101T*
UCs
UC
UCs
1=B
1=B
1=B
2=E
2=E
2=E
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
TSFP-3
TSLP-3-4
SC75
*Preliminary
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Emitter-base voltage VEBO 10
Input on voltage Vi(on) 50
Collector current IC50 mA
Total power dissipation-
BCR101F, TS ≤ 128°C
BCR101L3, TS ≤ 135°C
BCR101T, TS ≤ 109°C
Ptot
250
250
250
mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Nov-27-2003
2
BCR101...
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BCR101F
BCR101L3
BCR101T
RthJS
≤ 90
≤ 60
≤ 165
K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
V(BR)CEO 50 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 50 - -
Collector-base cutoff current
VCB = 40 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 10 V, IC = 0
IEBO - - 75 µA
DC current gain2)
IC = 5 mA, VCE = 5 V
hFE 70 - - -
Collector-emitter saturation voltage2)
IC = 5 mA, IB = 0.25 mA
VCEsat - - 0.3 V
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off) 0.5 - 1.8
Input on voltage
IC = 1 mA, VCE = 0.3 V
Vi(on) 1 - 3
Input resistor R170 100 130 kΩ
Resistor ratio R1/R20.9 1 1.1 -
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT- 100 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 3 - pF
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulse test: t < 300µs; D < 2%
Nov-27-2003
3
BCR101...
DC current gain hFE = ƒ(IC)
VCE = 5 V (common emitter configuration)
10 -4 10 -3 10 -2 10 -1
A
IC
1
10
2
10
3
10
hFE
Collector-emitter saturation voltage
VCEsat = ƒ(IC), hFE = 20
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 V0.5
VCEsat
-4
10
-3
10
-2
10
-1
10
A
IC
Input on Voltage Vi(on) = ƒ(IC)
VCE = 0.3V (common emitter configuration)
10 -1 10 0 10 1 10 2
V
Vi(on)
-5
10
-4
10
-3
10
-2
10
-1
10
A
IC
Input off voltage Vi(off) = ƒ(IC)
VCE = 5V (common emitter configuration)
0.5 1 1.5 2 2.5 3 V4
Vi(off)
-6
10
-5
10
-4
10
-3
10
-2
10
A
IC
Nov-27-2003
4
BCR101...
Total power dissipation Ptot = ƒ(TS)
BCR101F
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
Ptot
Total power dissipation Ptot = ƒ(TS)
BCR101L3
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
Ptot
Total power dissipation Ptot = ƒ(TS)
BCR101T
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
Ptot
Permissible Puls Load RthJS = ƒ (tp)
BCR101F
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
K/W
RthJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Nov-27-2003
5
BCR101...
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BCR101F
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
Ptotmax/PtotDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load RthJS = ƒ (tp)
BCR101L3
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BCR101L3
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
Ptotmax/ PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load RthJS = ƒ (tp)
BCR101T
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Nov-27-2003
6
BCR101...
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BCR101T
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
Ptotmax / PtotDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
