PD - 97354B IRFB4115PbF HEXFET(R) Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS(on) typ. max. ID (Silicon Limited) Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free G D 150V 9.3m 11m 104A S TO-220AB G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 104 74 420 380 2.5 20 18 -55 to + 175 c Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw e dv/dt TJ TSTG Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy Thermal Resistance Symbol RJC RCS RJA www.irf.com Parameter j ij A W W/C V V/ns C 300 x x 10lb in (1.1N m) d Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient Units 830 mJ Typ. Max. Units --- 0.50 --- 0.40 --- 62 C/W 1 07/22/11 IRFB4115PbF Static @ TJ = 25C (unless otherwise specified) Symbol Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance RG Min. Typ. Max. Units 150 --- --- 3.0 --- --- --- --- --- --- 0.18 9.3 --- --- --- --- --- 2.3 --- --- 11 5.0 20 250 100 -100 --- V V/C m V A nA Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 3.5mA VGS = 10V, ID = 62A VDS = VGS, ID = 250A VDS = 150V, VGS = 0V VDS = 150V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V c f Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter 97 --- --- --- --- Turn-On Delay Time --- Rise Time --- Turn-Off Delay Time --- Fall Time --- Input Capacitance --- Output Capacitance --- Reverse Transfer Capacitance --- Effective Output Capacitance (Energy Related) --- Effective Output Capacitance (Time Related) --- --- 77 28 26 51 18 73 41 39 5270 490 105 460 530 --- 120 --- --- --- --- --- --- --- --- --- --- --- --- S nC IS Parameter VSD trr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time ISM d Notes: Repetitive rating; pulse width limited by max. junction temperature. Recommended max EAS limit, starting TJ = 25C, L = 0.17mH, RG = 25, IAS = 100A, VGS =15V. ISD 62A, di/dt 1040A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. 2 VDS = 50V, ID = 62A ID = 62A VDS = 75V VGS = 10V ID = 62A, VDS =0V, VGS = 10V VDD = 98V ID = 62A RG = 2.2 VGS = 10V VGS = 0V VDS = 50V = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 120V , See Fig. 11 VGS = 0V, VDS = 0V to 120V f ns pF f h g Diode Characteristics Symbol Conditions Min. Typ. Max. Units Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Min. Typ. Max. Units --- --- 104 A --- --- 420 A Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 62A, VGS = 0V TJ = 25C VR = 130V, IF = 62A TJ = 125C TJ = 25C di/dt = 100A/s TJ = 125C TJ = 25C f D S --- --- 1.3 V --- 86 --- ns --- 110 --- --- 300 --- nC --- 450 --- --- 6.5 --- A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) f Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C. www.irf.com IRFB4115PbF 1000 1000 100 BOTTOM 100 10 1 5.0V BOTTOM 5.0V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 0.1 0.1 1 1 10 0.1 100 Fig 1. Typical Output Characteristics 10 100 Fig 2. Typical Output Characteristics 1000 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) T J = 175C 100 T J = 25C 10 1 VDS = 50V 60s PULSE WIDTH 0.1 ID = 62A VGS = 10V 2.5 2.0 1.5 1.0 0.5 2 4 6 8 10 12 14 16 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 14.0 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 10000 C, Capacitance (pF) VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V Ciss Coss 1000 Crss 100 10 ID= 62A 12.0 VDS= 120V VDS= 75V VDS= 30V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage www.irf.com 0 20 40 60 80 100 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3 IRFB4115PbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 175C 100 10 T J = 25C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100sec 100 10msec 10 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.1 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 VSD, Source-to-Drain Voltage (V) 80 60 40 20 0 75 100 125 150 175 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) ID, Drain Current (A) 100 50 1000 200 Id = 3.5mA 190 180 170 160 150 140 -60 -40 -20 0 20 40 60 80 100120140160180 T C , Case Temperature (C) T J , Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 6.0 VGS(th) , Gate threshold Voltage (V) 6.0 5.0 4.0 Energy (J) 100 Fig 8. Maximum Safe Operating Area 120 25 10 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 3.0 2.0 1.0 0.0 5.0 4.0 3.0 ID = 250A ID = 1.0mA ID = 1.0A 2.0 1.0 -20 0 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 1msec DC -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( C ) Fig 12. Threshold Voltage vs. Temperature www.irf.com IRFB4115PbF Thermal Response ( Z thJC ) C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 J R1 R1 J 1 R2 R2 C 2 1 C 2 Ri (C/W) i (sec) 0.245 0.0059149 0.155 0.0006322 C i= i/R i Ci= i/Ri 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 50 50 IF = 42A V R = 130V 40 TJ = 25C TJ = 125C 30 IRR (A) IRR (A) 40 IF = 62A V R = 130V 20 10 TJ = 25C TJ = 125C 30 20 10 0 0 0 200 400 600 800 1000 0 200 diF /dt (A/s) 2500 800 1000 3000 IF = 42A V R = 130V 2000 IF = 62A V R = 130V 2400 TJ = 25C TJ = 125C 1500 QRR (A) QRR (A) 600 Fig 15. - Typical Recovery Current vs. dif/dt Fig 14. - Typical Recovery Current vs. dif/dt 1000 500 TJ = 25C TJ = 125C 1800 1200 600 0 0 0 200 400 600 800 1000 diF /dt (A/s) Fig 16. - Typical Stored Charge vs. dif/dt www.irf.com 400 diF /dt (A/s) 0 200 400 600 800 1000 diF /dt (A/s) Fig 17. - Typical Stored Charge vs. dif/dt 5 IRFB4115PbF Driver Gate Drive D.U.T - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG VGS 20V + V - DD IAS A 0.01 tp I AS Fig 19a. Unclamped Inductive Test Circuit RD VDS Fig 19b. Unclamped Inductive Waveforms VDS 90% VGS D.U.T. RG + - VDD V10V GS 10% VGS Pulse Width 1 s Duty Factor 0.1 % td(on) Fig 20a. Switching Time Test Circuit tr t d(off) Fig 20b. Switching Time Waveforms Id Current Regulator Same Type as D.U.T. Vds Vgs 50K 12V tf .2F .3F D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors 6 Fig 21a. Gate Charge Test Circuit Qgs1 Qgs2 Qgd Qgodr Fig 21b. Gate Charge Waveform www.irf.com IRFB4115PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information (;$03/( 7+,6,6$1,5) /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(& ,17(51$7,21$/ 3$57180%(5 5(&7,),(5 /2*2 '$7(&2'( 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH $66(0%/< /27&2'( <($5 :((. /,1(& TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2011 www.irf.com 7