1
P ow er Transistors
2SD1485
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1054
■Features
●Extremely satisfactory linearity of the forward current transfer
ratio hFE
●Wide area of safe operation (ASO)
●High transition frequency fT
●Full-pack package which can be installed to the heat sink with
one screw
■Absolute Maximum Ratings (TC=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
100
100
5
8
5
60
3
150
–55 to +155
Unit
V
V
V
A
A
W
˚C
˚C
T
C
=25°C
Ta=25°C
■Electrical Characteristics (TC=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE1
hFE2*
hFE3
VBE
VCE(sat)
fT
Cob
Conditions
VCB = 100V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 3A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.3A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
min
20
60
20
typ
20
90
max
50
50
200
1.8
2
Unit
µA
µA
V
V
MHz
pF
*hFE2 Rank classification
Rank Q P
hFE2 60 to 120 100 to 200
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
15.0±0.3
21.0±0.516.2±0.5
12.5
Solder Dip 3.5 0.715.0±0.2
5.0±0.2
11.0±0.2
10.9±0.5
5.45±0.3
321
1.1±0.1
2.0±0.2
0.6±0.2
2.0±0.1
φ3.2±0.1
3.2
2
P ow er Transistors 2SD1485
PC—Ta I
C—V
CE IC—V
BE
VCE(sat) —I
ChFE —I
CfT —I
C
Area of safe operation (ASO) Rth(t) —t
0 16040 12080 14020 10060
0
80
60
20
50
70
40
10
30
(1) T
C
=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(P
C
=3.0W)
(1)
(2)
(3)
Ambient temperature Ta (˚C)
Collector power dissipation P
C
(W)
012108264
0
10
8
6
4
2
T
C
=25˚C
I
B
=100mA
80mA
40mA
20mA
10mA
60mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
02.01.60.4 1.20.8
0
8
6
2
5
7
4
1
3
T
C
=100˚C 25˚C
–25˚C
V
CE
=5V
Base to emitter voltage V
BE
(V)
Collector current I
C
(A)
0.01 0.1 1 100.03 0.3 3
0.01
0.03
0.1
0.3
1
3
10
30
100 I
C
/I
B
=10
T
C
=100˚C
25˚C
–25˚C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V)
0.01 0.1 1 100.03 0.3 3
1
3
10
30
100
300
1000
3000
10000
V
CE
=5V
T
C
=100˚C 25˚C
–25˚C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01 0.1 1 100.03 0.3 3
0.1
0.3
1
3
10
30
100
300
1000 V
CE
=5V
f=1MHz
T
C
=25˚C
Collector current I
C
(A)
Transition frequency f
T
(MHz)
1 10 100 10003 30 300
0.01
0.03
0.1
0.3
1
3
10
30
100 Non repetitive pulse
T
C
=25˚C
I
CP
I
C
10ms
t=1ms
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
10
–3
10
2
10
–2
110
–1
10 10
3
10
4
10
–1
1
10
10
2
10
3
(1) P
T
=10V × 0.3A (3W) and without heat sink
(2) P
T
=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t) (˚C/W)
