V
RRM
= 100 V - 1600 V
I
F
= 85 A
Features
• High Surge Capability
DO-5 Package
• Ty
pes up to 1600 V V
RRM
Parameter
Sy
mbol
Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
V
Silicon Standard
Recov
er
y
Diode
Maximu
m ratings, at T
j
= 25 °C, unless oth
erwise sp
ecified ("R" dev
ices hav
e leads reversed)
800
1200
Conditions
S85K (R)
S85M (R)
S85Q (R)
1000
S85K thru S85QR
pp
g
RMS rev
erse voltage
V
RMS
V
DC blocking voltage
V
DC
V
Continuous forward current
I
F
A
Operating temperature
T
j
°C
Storage temperature
T
stg
°C
Parameter
Sy
mbol
Unit
Diode forward v
oltage
μ
A
mA
Thermal ch
aracteristics
Thermal resistance, junction -
case
R
thJC
°C/W
0.65
85
85
85
1800
1800
1800
840
1200
1.1
1.1
-65 to 180
9
1000
800
10
S85Q (R)
1.1
10
10
-65 to 180
-65 to 180
-65 to 180
-65 to 180
-65 to 180
S85K (R)
S85M (R)
0.65
0.65
V
R
= 100 V, T
j
= 180 °C
99
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤
140 °C
Conditions
700
560
V
R
= 100 V, T
j
= 25 °C
I
F
= 85 A, T
j
= 25 °C
Reverse current
I
R
V
F
Electrical characteristics, at
Tj = 25 °C, u
nless otherw
ise specif
ied
Surge non-repetitive forward
current, Half Sine W
ave
I
F,SM
A
www.genesicsemi.com
1
S85K thru S85QR
www.genesicsemi.com
2
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