S85K thru S85QR Silicon Standard Recovery Diode VRRM = 100 V - 1600 V IF = 85 A Features * High Surge Capability * Types up to 1600 V VRRM DO-5 Package Maximum ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol ("R" devices have leads reversed) Conditions S85K (R) S85M (R) S85Q (R) Unit Repetitive p p peak reverse voltage g VRRM 800 1000 1200 V RMS reverse voltage VRMS 560 700 840 V DC blocking voltage VDC 800 1000 1200 V Continuous forward current IF TC 140 C 85 85 85 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms 1800 1800 1800 A Operating temperature Storage temperature Tj Tstg -65 to 180 -65 to 180 -65 to 180 -65 to 180 -65 to 180 -65 to 180 C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Conditions S85K (R) S85M (R) S85Q (R) Unit IF = 85 A, Tj = 25 C VR = 100 V, Tj = 25 C VR = 100 V, Tj = 180 C 1.1 10 9 1.1 10 9 1.1 10 9 A mA 0.65 0.65 0.65 C/W V Thermal characteristics Thermal resistance, junction case www.genesicsemi.com RthJC 1 S85K thru S85QR www.genesicsemi.com 2