V
RRM
= 100 V - 1600 V
I
F
= 85 A
Features
• High Surge Capability DO-5 Package
• Types up to 1600 V V
RRM
Parameter Symbol Unit
Re
p
etitive
p
eak reverse volta
g
eV
RRM
V
Silicon Standard
Recover
y
Diode
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
800 1200
Conditions S85K (R) S85M (R) S85Q (R)
1000
S85K thru S85QR
pp g
RMS reverse voltage V
RMS
V
DC blocking voltage V
DC
V
Continuous forward current I
F
A
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
°C/W
0.65
85 85 85
1800 1800 1800
840
1200
1.1 1.1
-65 to 180
9
1000800
10
S85Q (R)
1.1
10 10
-65 to 180 -65 to 180
-65 to 180 -65 to 180 -65 to 180
S85K (R) S85M (R)
0.65 0.65
V
R
= 100 V, T
j
= 180 °C 99
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 140 °C
Conditions
700560
V
R
= 100 V, T
j
= 25 °C
I
F
= 85 A, T
j
= 25 °C
Reverse current I
R
V
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
A
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S85K thru S85QR
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