2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com * Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A * Excellent Power Dissipation Due to Thermopad Construction - * * * * PD = 30 W @ TC = 25_C Excellent Safe Operating Area Gain Specified to IC = 1.0 A Complement to PNP 2N4918, 2N4919, 2N4920 Pb-Free Packages are Available* 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40-80 VOLTS, 30 WATTS MAXIMUM RATINGS IIIIIIIIIIII III IIII IIII IIIIIIIIIIII III IIII IIII III IIII IIIIIIIIIIII IIII IIIIIIIIIIII III IIII IIII IIIIIIIIIIII III IIII IIII IIIIIIIIIIII III IIII IIII IIIIIIIIIIII III IIII IIII IIIIIIIIIIII III IIII IIII IIIIIIIIIIII III IIII IIII IIIIIIIIIIII III IIII IIII IIIIIIIIIIII III IIII IIII IIIIIIIIIIII III IIII IIII IIIIIIIIIIII III IIII IIII IIIIIIIIIIII III IIII IIII Rating Symbol Value Unit Collector-Emitter Voltage 2N4921 2N4922 2N4923 VCEO 40 60 80 Vdc Collector-Emitter Voltage 2N4921 2N4922 2N4923 VCB 40 60 80 Vdc Emitter Base Voltage VEB 5.0 Vdc Collector Current - Continuous (Note 1) IC 1.0 3.0 Adc Base Current IB 1.0 Adc PD 30 0.24 W mW/_C TJ, Tstg -65 to +150 _C - Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range TO-225 CASE 77 STYLE 1 3 2 1 MARKING DIAGRAM 1 YWW 2 N492xG THERMAL CHARACTERISTICS (Note 2) Characteristic Thermal Resistance, Junction-to-Case Symbol Max Unit qJC 4.16 _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The 1.0 A maximum IC value is based upon JEDEC current gain requirements. The 3.0 A maximum value is based upon actual current handling capability of the device (see Figures 5 and 6). 2. Recommend use of thermal compound for lowest thermal resistance. *Indicates JEDEC Registered Data. Y = Year WW = Work Week 2N492x = Device Code x = 1, 2, or 3 G = Pb-Free Package ORDERING INFORMATION Device 2N4921 2N4921G 2N4922 2N4922G 2N4923 2N4923G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 January, 2006 - Rev. 11 1 Package Shipping TO-225 500 Units / Box TO-225 (Pb-Free) 500 Units / Box TO-225 500 Units / Box TO-225 (Pb-Free) 500 Units / Box TO-225 500 Units / Box TO-225 (Pb-Free) 500 Units / Box Preferred devices are recommended choices for future use and best overall value. Publication Order Number: 2N4921/D 2N4921, 2N4922, 2N4923 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIII III IIII IIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIII III IIII IIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIII IIIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIII III IIII IIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 40 60 80 - - - - - - 0.5 0.5 0.5 - - 0.1 0.5 - 0.1 - 1.0 40 30 10 - 150 - - 0.6 - 1.3 - 1.3 3.0 - - 100 25 - Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3) (IC = 0.1 Adc, IB = 0) VCEO(sus) 2N4921 2N4922 2N4923 Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) Vdc ICEO 2N4921 2N4922 2N4923 Collector Cutoff Current (VCE = Rated VCEO, VEB(off) = 1.5 Vdc) (VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C ICEX Collector Cutoff Current (VCB = Rated VCB, IE = 0) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO mAdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE Collector-Emitter Saturation Voltage (Note 3) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) Base-Emitter Saturation Voltage (Note 3) (IC = 1.0 Adc, IB = 0.1 Adc) VBE(sat) Base-Emitter On Voltage (Note 3) (IC = 1.0 Adc, VCE = 1.0 Vdc) VBE(on) - Vdc Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Cob Small-Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 3. Pulse Test: PW 300 ms, Duty Cycle 2.0%. *Indicates JEDEC Registered Data. http://onsemi.com 2 MHz pF - 2N4921, 2N4922, 2N4923 PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 25 50 75 100 TC, CASE TEMPERATURE (C) 125 150 Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. APPROX +11 V TURN-ON PULSE t1 VCC Vin Vin VBE(off) RC RB Cjd<<Ceb t3 APPROX +11 V -4.0 V SCOPE t1 15 ns 100 < t2 500 ms t3 15 ns Vin APPROX 9.0 V t2 TURN-OFF PULSE DUTY CYCLE 2.0% RB and RC varied to obtain desired current levels Figure 2. Switching Time Equivalent Circuit 5.0 VCC = 30 V IC/IB = 20 3.0 t, TIME (s) 2.0 IC/IB = 10, UNLESS NOTED TJ = 25C TJ = 150C VCC = 60 V 1.0 0.7 0.5 tr 0.3 0.2 0.1 0.07 0.05 td VCC = 30 V VCC = 60 V VBE(off) = 2.0 V VCC = 30 V VBE(off) = 0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 3. Turn-On Time http://onsemi.com 3 500 700 1000 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N4921, 2N4922, 2N4923 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.03 P(pk) qJC(t) = r(t) qJC qJC = 4.16C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.1 0.05 0.01 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 10 7.0 5.0 5.0 ms 1.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 3.0 2.0 TJ = 150C 1.0 0.7 0.5 dc SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C PULSE CURVES APPLY BELOW RATED VCEO 0.3 0.2 0.1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. Active-Region Safe Operating Area 5.0 5.0 3.0 3.0 IC/IB = 20 t f, FALL TIME (s) t s, STORAGE TIME (s) 1.0 0.7 0.5 IC/IB = 10 0.3 0.2 0.1 0.07 0.05 IC/IB = 20 2.0 2.0 IC/IB = 20 TJ = 25C TJ = 150C IB1 = IB2 ts = ts - 1/8 tf 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 500 700 1000 IC/IB = 10 TJ = 25C TJ = 150C VCC = 30 V IB1 = IB2 10 Figure 6. Storage Time 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 7. Fall Time http://onsemi.com 4 500 700 1000 hFE , DC CURRENT GAIN 1000 700 500 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N4921, 2N4922, 2N4923 VCE = 1.0 V 300 200 TJ = 150C 100 70 50 25C -55 C 30 20 10 2.0 3.0 5.0 10 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA) 1000 2000 1.0 0.8 108 1.0 A TJ = 25C 0.4 0.2 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IB, BASE CURRENT (mA) 50 100 200 1.5 IC = 10 x ICES VCE = 30 V TJ = 25C 107 1.2 IC = 2 x ICES VOLTAGE (VOLTS) RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 0.5 A Figure 9. Collector Saturation Region 106 IC ICES 105 ICES VALUES OBTAINED FROM FIGURE 12 104 0 30 0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 60 90 120 VCE(sat) @ IC/IB = 10 0 10 20 30 50 2.0 3.0 5.0 150 100 200 300 500 TJ, JUNCTION TEMPERATURE (C) IC, COLLECTOR CURRENT (mA) Figure 10. Effects of Base-Emitter Resistance Figure 11. "On" Voltage 104 TJ = 150C 103 100C 102 25C 101 IC = ICES 100 VCE = 30 V 10-1 10- 2 -0.2 1000 2000 +2.5 REVERSE -0.1 FORWARD 0 +0.1 +0.2 +0.3 +0.4 TEMPERATURE COEFFICIENTS (mV/C) IC, COLLECTOR CURRENT (A) 0.25 A 0.6 Figure 8. Current Gain 103 IC = 0.1 A +2.0 *APPLIES FOR IC/IB +1.5 +1.0 TJ = 100C to 150C +0.5 *qVC FOR VCE(sat) 0 -55 C to +100C -0.5 -1.0 -1.5 qVB FOR VBE -2.0 -2.5 2.0 3.0 5.0 +0.5 hFE@VCE + 1.0V 2 VBE, BASE-EMITTER VOLTAGE (VOLTS) 10 20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA) Figure 12. Collector Cut-Off Region Figure 13. Temperature Coefficients http://onsemi.com 5 2N4921, 2N4922, 2N4923 PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z -B- U F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. C Q M -A- 1 2 3 H K J V G R 0.25 (0.010) S M A M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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