BAV23C-V-G-08 - Vishay Presicion Group

BAV23C-V-G

www.vishay.com Vishay Semiconductors

Rev. 1.2, 25-Sep-12 1Document Number: 85866

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Switching Diode, Dual

MECHANICAL DATA

Case: SOT-23

Weight: approx. 8.1 mg

Packaging codes/options:

GS18/10K per 13" reel (8 mm tape), 10K/box

GS08/3K per 7" reel (8 mm tape), 15K/box

FEATURES

• Silicon epitaxial planar diode

• Fast switching dual diode with common cathode

• AEC-Q101 qualified

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

21670

PARTS TABLE

PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS

BAV23C-V-G BAV23C-V-G-18 or BAV23C-V-G-08 KT7 Dual diodes common anode Tape and reel

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Repetitive peak reverse voltage VRRM 250 V

Continuous reverse voltage VR200 V

Non-repetitive peak forward current t = 1 μs IFSM 9.0 A

Non-repetitive peak forward surge current t = 1 s IFSM 0.5 A

Repetitive peak forward current IFRM 625 mA

Forward continuous current Device on fiberglass substrate IF400 mA

Maximum average forward rectified current Measured under pulse conditions;

pulse time = tp  0.3 ms IFAV 200 mA

Power dissipation Device on fiberglass substrate Ptot 350 mW

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Thermal resistance junction to ambient air Device on fiberglass substrate RthJA 357 K/W

Junction temperature Tj150 °C

Storage temperature range Tj = Tstg - 65 to + 150 °C

BAV23C-V-G

www.vishay.com Vishay Semiconductors

Rev. 1.2, 25-Sep-12 2Document Number: 85866

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Ptot - Admissible Power Dissipation vs. Ambient Temperature

Fig. 2 - IFSM - Non-Repetitive Peak Forward Current vs. Pulse Duration - Maximum Admissible Values of Square Pulses

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Breakdown voltage IR = 100 μA, tp = 300 μs V(BR) 250 V

Forward voltage IF = 100 mA VF1V

IF = 200 mA VF1.25 V

Reverse current VR = 200 V IR100 nA

VR = 200 V, Tj = 150 °C IR100 μA

Dynamic forward resistance IF = 10 mA rf5

Diode capacitance VR = 0 V, f = 1 MHz CD5pF

Reverse recovery time IF = IR = 30 mA, iR = 3 mA,

RL = 100 trr 50 ns

100

150

200

250

300

350

400

450

500

0 50 100 150

Ptot (mW)

Tamb (°C)

100

0.1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1



Test pulse tp (s)

IFSM (A)

Tj = 25 °C - prior to surge

BAV23C-V-G

www.vishay.com Vishay Semiconductors

Rev. 1.2, 25-Sep-12 3Document Number: 85866

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - VF - Typical Forward Current vs. Forward Voltage vs. Various Temperatures

Fig. 4 - IR - Typical Reverse Current vs. Reverse Voltage vs. Various Temperatures

VF (V)

IF (A)

100.0E-6

1.0E-3

10.0E-3

100.0E-3

1.0E+0

10.0E-6

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Tamb = 75 °C

Tamb = 150 °C

Tamb = 125 °C

Tamb = 100 °C

Tamb = 50 °C

Tamb = 25 °C

VR (V)

IR (A)

1.00E-07

1.00E-06

1.00E-05

1.00E-04

1.00E-03

1.00E-09

1.00E-08

0 50 100 150 200 250 300

Tamb = 75 °C

Tamb = 150 °C

Tamb = 125 °C

Tamb = 100 °C

Tamb = 50 °C

Tamb = 25 °C

BAV23C-V-G

www.vishay.com Vishay Semiconductors

Rev. 1.2, 25-Sep-12 4Document Number: 85866

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters (inches): SOT-23

Foot print recommendation:

Rev. 8 - Date: 23.Sept.2009

17418

Document no.: 6.541-5014.01-4

0.9 (0.035)

1 (0.039)

0.9 (0.035)

1 (0.039)

1.43 (0.056)

0.45 (0.018)

0.35 (0.014)

2.8 (0.110)

3.1 (0.122)

0.45 (0.018)

0.35 (0.014)

0.45 (0.018)

0.35 (0.014)

0.1 (0.004) max.

2.35 (0.093)

2.6 (0.102)

0.175 (0.007)

0.098 (0.004)

1.15 (0.045)

0.9 (0.035)

1.20 (0.047)

0.95 (0.037) 0.95 (0.037)

2 (0.079)

0.7 (0.028)

0.9 (0.035)

0° to 8°

0.2 (0.008)

0.3 (0.012)

0.5 (0.020)

0.550 ref. (0.022 ref.)

Legal Disclaimer Notice

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Revision: 02-Oct-12 1Document Number: 91000

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