NTD4858N-1G - ON Semiconductor - Datasheet.Directory

©Semiconductor Components Industries, LLC, 2010

June, 2010 -- Rev. 1

1Publication Order Number:

NTD4858N/D

NTD4858N

Power MOSFET

25 V, 73 A, Single N--Channel, DPAK/IPAK

Features

•Trench Technology

•Low RDS(on) to Minimize Conduction Losses

•Low Capacitance to Minimize Driver Losses

•Optimized Gate Charge to Minimize Switching Losses

•These are Pb--Free Devices

Applications

•VCORE Applications

•DC--DC Converters

•High/Low Side Switching

MAXIMUM RATINGS (TJ=25°C unless otherwise stated)

Parameter Symbol Value Unit

Drain--to--Source Voltage VDSS 25 V

Gate--to--Source Voltage VGS ±20 V

Continuous Drain

Current RθJA

(Note 1)

Steady

State

TA=25°CID14 A

TA=85°C10.9

Power Dissipation

RθJA (Note 1)

TA=25°C PD2.0 W

Continuous Drain

Current RθJA

(Note 2)

TA=25°CID 11.2 A

TA=85°C8.7

Power Dissipation

RθJA (Note 2)

TA=25°C PD1.3 W

Continuous Drain

Current RθJC

(Note 1)

TC=25°CID73 A

TC=85°C56

Power Dissipation

RθJC (Note 1)

TC=25°C PD54.5 W

Pulsed Drain

Current

tp=10msTA=25°C IDM 146 A

Current Limited by Package TA=25°C IDmaxPkg 45 A

Operating Junction and Storage

Temperature

TJ,

TSTG

-- 5 5 t o

+175

°C

Source Current (Body Diode) IS45 A

Drain to Source dV/dt dV/dt 6V/ns

Single Pulse Drain--to--Source Avalanche

Energy (TJ=25°C, VDD =50V,V

GS =10V,

IL=15A

pk,L=1.0mH,R

G=25Ω)

EAS 112.5 mJ

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MARKING DIAGRAMS

& PIN ASSIGNMENTS

http://onsemi.com

V(BR)DSS RDS(ON) MAX IDMAX

25 V

6.2 mΩ@10V

73 A

9.3 mΩ@4.5V

N--CHANNEL MOSFET

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

YWW

58NG

Gate

Drain 3

Source

Drain

Gate

Source

Drain

Gate

Source

YWW

58NG

YWW

58NG

Y = Year

WW = Work Week

4858N = Device Code

G = Pb--Free Package

CASE 369AA

DPAK

(Bent Lead)

STYLE 2

CASE 369D

IPAK

(Straight Lead

DPAK)

123

CASE 369AC

3IPAK

(Straight Lead)

123

NTD4858N

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THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction--to--Case (Drain) RθJC 2.75 °C/W

Junction--to--TAB (Drain) RθJC--TAB 3.5

Junction--to--Ambient – Steady State (Note 1) RθJA 73.5

Junction--to--Ambient – Steady State (Note 2) RθJA 116

1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu.

2. Surface--mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain--to--Source Breakdown Voltage V(BR)DSS VGS =0V,I

D= 250 mA25 V

Drain--to--Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/

22 mV/°C

Zero Gate Voltage Drain Current IDSS VGS =0V,

VDS =20V

TJ=25°C1.0

TJ= 125°C10

Gate--to--Source Leakage Current IGSS VDS =0V,V

GS =±20 V ±100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage VGS(TH) VGS =V

DS,I

D= 250 mA1.45 2.5 V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ5.3 mV/°C

Drain--to--Source On Resistance RDS(on) VGS =10V ID=30A 5.2 6.2

mΩ

VGS =4.5V ID=30A 7.3 9.3

Forward Transconductance gFS VDS =1.5V,I

D=15A 55 S

CHARGES AND CAPACITANCES

Input Capacitance CISS

VGS =0V,f=1.0MHz,V

DS =12V

1563

Output Capacitance COSS 405

Reverse Transfer Capacitance CRSS 200

Total Gate Charge QG(TOT)

VGS =4.5V,V

DS =15V,I

D=30A

12.8 19.2

Threshold Gate Charge QG(TH) 1.3

Gate--to--Source Charge QGS 4.7

Gate--to--Drain Charge QGD 5.2

Total Gate Charge QG(TOT) VGS =10V,V

DS =15V,I

D=30A 25.7 nC

SWITCHING CHARACTERISTICS (Note 4)

Turn--On Delay Time td(ON)

VGS =4.5V,V

DS =15V,

ID=15A,R

G=3.0Ω

12.6

Rise Time tr20.2

Turn--Off Delay Time td(OFF) 16.4

Fall Time tf5.1

Turn--On Delay Time td(ON)

VGS =11.5V,V

DS =15V,

ID=15A,R

G=3.0Ω

7.7

Rise Time tr17.3

Turn--Off Delay Time td(OFF) 23.8

Fall Time tf2.8

3. Pulse Test: pulse width ≤300 ms, duty cycle ≤2%.

4. Switching characteristics are independent of operating junction temperatures.

NTD4858N

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ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)

Parameter UnitMaxTypMinTest ConditionSymbol

DRAIN--SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS =0V,

IS=30A

TJ=25°C0.87 1.2

TJ= 125°C0.73

Reverse Recovery Time tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS=30A

11.6

Charge Time ta7.8

Discharge Time tb3.7

Reverse Recovery Charge QRR 3.0 nC

PACKAGE PARASITIC VALUES

Source Inductance LS

TA=25°C

2.49 nH

Drain Inductance, DPAK LD0.0164

Drain Inductance, IPAK LD1.88

Gate Inductance LG3.46

Gate Resistance RG0.7 Ω

3. Pulse Test: pulse width ≤300 ms, duty cycle ≤2%.

4. Switching characteristics are independent of operating junction temperatures.

NTD4858N

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TYPICAL PERFORMANCE CURVES

10 V

VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)

Figure 1. On--Region Characteristics Figure 2. Transfer Characteristics

ID, DRAIN CURRENT (AMPS)

Figure 3. On--Resistance vs. Gate--to--Source

Voltage

VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)

Figure 4. On--Resistance vs. Drain Current and

Gate Voltage

ID, DRAIN CURRENT (AMPS)

RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω)

Figure 5. On--Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Drain--to--Source Leakage Current

vs. Drain Voltage

VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)

RDS(on), DRAIN--TO--SOURCE RESISTANCE

(NORMALIZED)

IDSS, LEAKAGE (nA)

VDS ≥10 V

TJ=25°C

TJ=--55°C

TJ= 125°C

VGS =4.5V

VGS =0V

ID=30A

VGS =10V TJ= 150°C

TJ= 125°C

TJ=25°C

3.8 V

3.0 V

3.6 V

2.8 V

3.2 V

3.4 V

ID=30A

TJ=25°C

VGS =11.5V

TJ=25°C

012345

123 45

0.010

0.020

0.030

0.040

246810

0.002

0.005

0.008

20 40 60 8010 30 50 70 90

0.003

0.006

0.004

0.007

0.6

0.8

1.0

1.2

1.4

--50 0 50 100 150

1.6

1.8

--25 25 75 125 175 0.1

1000

510152025

10000

0.005

0.015

0.025

0.035

357911

100

TJ=25°C

0.010

0.009

NTD4858N

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TYPICAL PERFORMANCE CURVES

Crss

010152.5

DRAIN--TO--SOURCE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

Figure 7. Capacitance Variation

VGS =0V

TJ=25°C

Coss

Ciss

VGS

Figure 8. Gate--To--Source and Drain--To--Source

Voltage vs. Total Charge

VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)

QG, TOTAL GATE CHARGE (nC)

ID=30A

VDD =15V

TJ=25°C

VSD, SOURCE--TO--DRAIN VOLTAGE (VOLTS)

IS, SOURCE CURRENT (AMPS)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

RG, GATE RESISTANCE (OHMS)

t, TIME (ns)

VGS =0V

Figure 10. Diode Forward Voltage vs. Current

td(off)

td(on)

VDD =15V

ID=30A

VGS =11.5V TJ=25°C

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS =20V

SINGLE PULSE

TC=25°C

1ms

100 ms

10 ms

TJ, JUNCTION TEMPERATURE (°C)

ID=15A

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

EAS, SINGLE PULSE DRAIN--TO--SOURCE

AVALANCHE ENERGY (mJ)

200

400

600

800

1000

1200

1400

1600

1800

2000

016248

12 20428

1 10 100

100

1000

0.5 0.7

0.6 0.8

0.1 10 100

100

1000

0.1

1 25 125 175

075

120

100

100 15050

7.5 12.5 17.5

0.9

NTD4858N

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TYPICAL PERFORMANCE CURVES

Figure 13. Thermal Response

r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

t, TIME (ms)

0.1

1.0

0.01

0.1

0.2

0.02

D=0.5

0.05

0.01

SINGLE PULSE

RθJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) -- T C=P

(pk) RθJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

1.0E+00 1.0E+011.0E--011.0E--021.0E--031.0E--041.0E--05

ORDERING INFORMATION

Device Package Shipping†

NTD4858NT4G DPAK

(Pb--Free)

2500 / Tape & Reel

NTD4858N--1G IPAK

(Pb--Free)

75 Units / Rail

NTD4858N--35G IPAK Trimmed Lead

(3.5 0.15 mm)

(Pb--Free)

75 Units / Rail

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NTD4858N

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PACKAGE DIMENSIONS

DPAK (SINGLE GUAGE)

CASE 369AA--01

ISSUE B

0.005 (0.13) C

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.030 0.045 0.76 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 -- -- -- 0 . 0 4 0 -- -- -- 1 . 0 1

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 ------ 3.93 ------

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN

DIMENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

12 3

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.108 REF 2.74 REF

L2 0.020 BSC 0.51 BSC

DETAIL A

SEATING

PLANE

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW°

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

5.80

0.228

2.58

0.102

1.60

0.063

6.20

0.244

3.00

0.118

6.17

0.243

mm

inches

SCALE 3:1

*For additional information on our Pb--Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

NTD4858N

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PACKAGE DIMENSIONS

3 IPAK, STRAIGHT LEAD

CASE 369AC--01

ISSUE O

3PL

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.245 5.97 6.22

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.018 0.023 0.46 0.58

F0.037 0.043 0.94 1.09

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.134 0.142 3.40 3.60

R0.180 0.215 4.57 5.46

V0.035 0.050 0.89 1.27

W0.000 0.010 0.000 0.25

NOTES:

1.. DIMENSIONING AND TOLERANCING

PER ANSI Y14.5M, 1982.

2.. CONTROLLING DIMENSION: INCH.

3. SEATING PLANE IS ON TOP OF

DAMBAR POSITION.

4. DIMENSION A DOES NOT INCLUDE

DAMBAR POSITION OR MOLD GATE.

SEATING PLANE

0.13 (0.005) W

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

123

-- T --

SEATING

PLANE

D3PL

0.13 (0.005) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.245 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.018 0.023 0.46 0.58

F0.037 0.045 0.94 1.14

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.180 0.215 4.45 5.45

S0.025 0.040 0.63 1.01

V0.035 0.050 0.89 1.27

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Z0.155 ------ 3.93 ------

IPAK (STRAIGHT LEAD DPAK)

CASE 369D--01

ISSUE B

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Phone: 421 33 790 2910

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Phone: 81--3--5773--3850

NTD4858N/D

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