2SA1216 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922) 2SA1216 Unit VCBO VCB=-180V -100max A VEB=-5V -100max A IC=-25mA -180min V 24.40.2 VCEO -180 V IEBO VEBO -5 V V(BR)CEO IC -17 A hFE VCE=-4V, IC=-8A 30min IB -5 A VCE(sat) IC=-8A, IB=-0.8A -2.0max V PC 200(Tc=25C) W fT VCE=-12V, IE=2A 40typ MHz Tj 150 C COB VCB=-10V, f=1MHz 500typ pF -55 to +150 C hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) 2-o3.20.1 7 21.40.3 b IC (A) VB2 (V) IB1 (A) IB2 (A) ton (s) tstg (s) tf (s) -40 4 -10 5 -1 1 0.3typ 0.7typ 0.2typ I C - V CE Characteristics (Typical) -50mA I B =-20mA 0 -1 -2 -3 -4 0 -0.8 0 -1.0 0 -5 125C 100 25C -30C 50 10 -0.02 -10 -17 -0.1 f T - I E Characteristics (Typical) ) -2 -2.4 j-a - t Characteristics -0.5 -1 -5 -10 -17 2 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) e T emp -1 Base-Emittor Voltage V B E (V) 200 DC Cur rent Gain h F E 50 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c - T a Derating (V C E =-12V) 200 10 m Emitter Current I E (A) 10 -0.2 -2 -10 -100 Collector-Emitter Voltage V C E (V) -300 nk 1 si 0.1 at 0 0.02 Without Heatsink Natural Cooling he -0.5 120 ite -1 fin -5 160 In 20 DC -10 ith Collect or Cur ren t I C (A) s T 40 yp W M aximum Power Dissipa ti on P C (W) -50 60 Cu t-off Fre quen cy f T (MH Z ) DC Curr ent Gain h F E Typ -1 -0.6 (V C E =-4V) 300 -0.5 -0.4 h FE - I C Temperature Characteristics (Typical) (V C E =-4V) -0.1 -0.2 Base Current I B (A) h FE - I C Characteristics (Typical) 10 -0.02 e T em p) Tem p) -5A 0 Collector-Emitter Voltage V C E (V) 100 -5 I C =-10A j - a ( C/W) 0 -1 -10 Cas -5 -2 Cas -100mA -15 C( -150mA (V C E =-4V) -17 125 A -2 00 mA -10 -3 Collector Current I C (A) -3 00 m E I C - V BE Temperature Characteristics (Typical) Transient Thermal Resistance 5A -1 A 00 m A -5 -1. -7 mA 3.0 +0.3 -0.1 5.450.1 C Weight : Approx 18.4g a. Type No. b. Lot No. V CE ( sa t ) - I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) -15 0 -40 0.65 +0.2 -0.1 1.05 +0.2 -0.1 B RL () A 2 3 5.450.1 VCC (V) m 00 9 a Typical Switching Characteristics (Common Emitter) -17 2.1 C( Tstg 6.00.2 36.40.3 -30 V Conditions ase -180 VCBO External Dimensions MT-200 (Ta=25C) SymboI C(C Unit 25 2SA1216 4.0max Electrical Characteristics Absolute maximum ratings (Ta=25C) Symbol Application : Audio and General Purpose 20.0min LAPT 80 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(C) 13