Ordering number : ENN7295A EC3A03B N-Channel Silicon Junction FET EC3A03B Impedance Converter, Infrared Sensor Applications Preliminary Features unit : mm 2208 [EC3A03B] 0.35 0.2 0.15 0.15 0.05 1 2 0.25 3 0.5 1.0 0.4 0.65 0.25 * Small IGSS. Small Ciss. Ultraminiature package facilitates miniaturization in end products. 0.05 * Package Dimensions 0.05 * 0.05 (Bottom View) 0.5 1 : Source 2 : Drain 3 : Gate Specifications 0.6 SANYO : ECSP1006-3 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 40 Gate-to-Drain Voltage VGDS --40 V Gate Current IG 10 mA Drain Current 1 mA 100 mW Junction Temperature ID PD Tj 150 C Storage Temperature Tstg --55 to +150 C Allowable Power Dissipation V Electrical Characteristics at Ta=25C Parameter Symbol Gate-to-Drain Breakdown Voltage V(BR)GDS Gate-to-Source Leakage Current IGSS Cutoff Voltage Zero-Gate Voltage Drain Current VGS(off) IDSS Conditions IG=--10A, VDS=0 VGS=--20V, VDS=0 typ max --40 VDS=10V, ID=1A --1.5 VDS=10V, VGS=0 50 yfs Ciss VDS=10V, VGS=0, f=1kHz VDS=10V, VGS=0, f=1MHz Reverse Transfer Capacitance Crss VDS=10V, VGS=0, f=1MHz 0.05 Unit V --500 Input Capacitance Forward Transfer Admittance Ratings min pA --4.0 V 130 A 0.13 mS 1.7 pF 0.7 pF Marking : JV Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22503 TS IM TA-100367 / O3002 TS IM TA-100288 No.7295-1/3 EC3A03B Type No. Indication (Top view) Electrical Connection (Top view) Polarity mark (Top) JV Polarity mark (Top) Source Gate Gate Drain Source Drain *Electrodes : Bottom ID -- VDS 140 120 V GS=0 80 --0.2V 60 --0.4V 40 --0.6V Drain Current, ID -- A 100 --0.8V --1.0V --1.2V --1.4V 0 0 1 2 3 4 C --2 5 100 75 C C 25 60 Gate-to-Source Voltage, VGS -- V 2 1.0 7 5 7 10 2 3 2 --1.0 7 3 3 5 7 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT04944 2 100 3 Drain Current, IDSS -- A Reverse Transfer Capacitance, Crss -- pF 3 5 VDS=10V ID=1A IT04943 Crss -- VDS 5 5 3 20 ITR00838 VGS(off) -- IDSS ITR00840 VGS=0 f=1MHz 2 16 5 0 Ciss -- VDS 7 12 5 0 --0.4 8 7 140 20 3 1.0 4 --10 160 40 10 --1.4V Drain-to-Source Voltage, VDS -- V 80 --0.8 --0.8V --1.0V 0 5 120 --1.2 --0.6V 40 ITR00837 VDS=10V IDSS=100A --1.6 --0.4V 60 --1.2V ID -- VGS --2.0 --0.2V 80 0 Drain-to-Source Voltage, VDS -- V --2.4 VGS=0 100 20 Cutoff Voltage, VGS(off) -- V 20 Drain Current, ID -- A Drain Current, ID -- A 120 Input Capacitance, Ciss -- pF ID -- VDS 140 VGS=0 f=1MHz 3 2 1.0 7 5 3 2 0.1 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT04945 No.7295-2/3 EC3A03B yfs -- IDSS 3 PD -- Ta 120 VDS=10V VGS=0 f=1kHz Allowable Power Dissipation, PD -- mW Forward Transfer Admittance, yfs -- mS 5 2 0.1 7 5 3 100 80 60 40 20 0 2 3 5 7 100 2 Drain Current, IDSS -- A 3 5 ITR00843 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 IT05137 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2003. Specifications and information herein are subject to change without notice. PS No.7295-3/3