PZT2222 / PZT2222A PZT2222 / PZT2222A Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren fur die Oberflachenmontage NPN NPN Version 2006-05-09 Power dissipation Verlustleistung 6.50.2 1.65 30.1 Plastic case Kunststoffgehause 1 0.7 2.3 3.5 70.3 2 0.2 4 Type Code 1.3 W 3 3.25 Dimensions - Mae [mm] 1=B 2/4 = C 3=E SOT-223 Weight approx. Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) PZT2222 PZT2222A Collector-Emitter-volt. - Kollektor-Emitter-Spannung E open VCEO 30 V 40 V Collector-Base-volt. - Kollektor-Basis-Spannung B open VCBO 60 V 75 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 5V 6V 1 Power dissipation - Verlustleistung Ptot 1.3 W ) Collector current - Kollektorstrom (dc) IC 600 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. Collector-cutoff current - Kollektor-Reststrom IE = 0, VCB = 50 V PZT2222 PZT2222A ICBO ICBO - - - - 20 nA 10 nA IE = 0, VCB = 50 V, Tj = 150C PZT2222 PZT2222A ICBO ICBO - - - - 20 A 10 A IEBO - -- 10 nA Emitter-cutoff current - Emitter-Reststrom IC = 0, VEB = 3 V 2 Collector saturation voltage - Kollektor-Sattigungsspannung ) 1 2 IC = 150 mA, IB = 15 mA PZT2222 PZT2222A VCEsat VCEsat - - - - 0.4 V 0.3 V IC = 500 mA, IB = 50 mA PZT2222 PZT2222A VCEsat VCEsat - - - - 1.6 V 1.0 V Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 PZT2222 / PZT2222A Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. Base saturation voltage - Basis-Sattigungsspannung 2) IC = 150 mA, IB = 15 mA PZT2222 PZT2222A VBEsat VBEsat - - - - 1.3 V 1.2 V IC = 500 mA, IB = 50 mA PZT2222 PZT2222A VBEsat VBEsat - - - - 2.6 V 2.0 V hFE hFE hFE hFE 35 50 75 100 - - - - - - - 300 hFE hFE 30 40 - - - - fT 200 MHz - - CCBO - - 8 pF CEBO - - 30 pf td - - 10 ns tr - - 25 ns ts - - 225 ns tf - - 60 ns DC current gain - Kollektor-Basis-Stromverhaltnis IC IC IC IC = = = = 0.1 mA, 1 mA, 10 mA, 150 mA, VCE VCE VCE VCE = = = = 10 10 10 10 V V V V 2) IC = 500 mA, VCE = 10 V 2) PZT2222 PZT2222A Gain-Bandwidth Product - Transitfrequenz IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten delay time rise time storage time ICon = 150 mA IBon = 15 mA - IBoff = 15 mA fall time Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA < 93 K/W 1) Thermal resistance junction to soldering point Warmewiderstand Sperrschicht - Lotpad RthS < 27 K/W Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren 2 1 2 PZT2907, PZT2907A Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG