2N2484
NPN SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2484 type is an
NPN silicon transistor designed for low noise amplifier
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 50 mA
Power Dissipation PD 360 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJA 486 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=45V 10 nA
ICBO V
CB=45V, TA=150°C 10 μA
ICEO V
CE=5.0V 2.0 nA
IEBO V
EB=5.0V 10 nA
BVCBO I
C=10μA 60 V
BVCEO I
C=10mA 60 V
BVEBO I
E=10μA 6.0 V
VCE(SAT) I
C=1.0mA, IB=100μA 0.35 V
VBE(ON) V
CE=5.0V, IC=100μA 0.5 0.7 V
hFE V
CE=5.0V, IC=1.0μA 30
hFE V
CE=5.0V, IC=10μA 100 500
hFE V
CE=5.0V, IC=10μA, TA=-55°C 20
hFE V
CE=5.0V, IC=100μA 175
hFE V
CE=5.0V, IC=500μA 200
hFE V
CE=5.0V, IC=1.0mA 250
hFE V
CE=5.0V, IC=10mA 800
hfe V
CE=5.0V, IC=1.0mA, f=1.0kHz 150 900
fT V
CE=5.0V, IC=50μA, f=5.0MHz 15 MHz
fT V
CE=5.0V, IC=0.5mA, f=30MHz 60 MHz
hie V
CE=5.0V, IC=1.0mA, f=1.0kHz 3.5 24 kΩ
hoe V
CE=5.0V, IC=1.0mA, f=1.0kHz 40 μS
hre V
CE=5.0V, IC=1.0mA, f=1.0kHz 800 x10-6
Cob V
CB=5.0V, IE=0, f=140kHz 6.0 pF
Cib V
EB=0.5V, IC=0, f=140kHz 6.0 pF
R1 (30-May 2012)
www.centralsemi.com
2N2484
NPN SILICON TRANSISTOR
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TO-18 CASE - MECHANICAL OUTLINE
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MAX UNITS
NF VCE=5.0V, IC=10μA, RS=10kΩ
BW=15.7kHz, 3.0dB PTS @ 10Hz, 10kHz 3.0 dB
NF VCE=5.0V, IC=10μA, RS=10kΩ, f=100Hz, BW=20Hz 10 dB
NF VCE=5.0V, IC=10μA, RS=10kΩ, f=1.0kHz, BW=200Hz 3.0 dB
NF VCE=5.0V, IC=10μA, RS=10kΩ, f=10kHz, BW=2.0kHz 2.0 dB
www.centralsemi.com
R1 (30-May 2012)
