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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3224 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3224 TO-251 (MP-3) 2SK3224-Z TO-252 (MP-3Z) designed for high current switching applications. FEATURES * Low on-state resistance RDS(on)1 = 40 m MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 m MAX. (VGS = 4.0 V, ID = 10 A) * Low Ciss : Ciss = 790 pF TYP. * Built-in gate protection diode * TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) 20 V Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, -10 V ID(DC) 20 A ID(pulse) 70 A Total Power Dissipation (TC = 25C) PT 25 W Total Power Dissipation (TA = 25C) PT 1.0 W Channel Temperature Tch 150 C Drain Current (DC) (TC = 25C) Drain Current (pulse) Note1 Storage Temperature Tstg -55 to +150 C Single Avalanche Current Note2 IAS 10 A Single Avalanche Energy Note2 EAS 10 mJ (TO-252) Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D13797EJ3V0DS00 (3rd edition) Date Published August 2004 NS CP(K) Printed in Japan The mark shows major revised points. 1999, 2001 2SK3224 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10 A Gate Leakage Current IGSS VGS = 20 V, VDS = 0 V 10 A VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V | yfs | VDS = 10 V, ID = 10 A 8.0 15 RDS(on)1 VGS = 10 V, ID = 10 A 24 40 m RDS(on)2 VGS = 4.0 V, ID = 10 A 33 60 m Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10 V 790 pF Output Capacitance Coss VGS = 0 V 240 pF Reverse Transfer Capacitance Crss f = 1 MHz 100 pF Turn-on Delay Time td(on) VDD = 30 V, ID = 10 A 19 ns tr VGS = 10 V 165 ns td(off) RG = 10 62 ns 71 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 48 V 20 nC Gate to Source Charge QGS VGS = 10 V 3 nC QGD ID = 20 A 6.5 nC VF(S-D) IF = 20 A, VGS = 0 V 0.93 V Reverse Recovery Time trr If = 20 A, VGS = 0 V 40 ns Reverse Recovery Charge Qrr di/dt = 100 A/s 45 nC Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 D.U.T. L RL PG. 50 VDD VGS = 20 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch = 1 s Duty Cycle 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 VDD 10% 0 10% Wave Form VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D13797EJ3V0DS td(on) tr ton td(off) tf toff 2SK3224 TYPICAL CHARACTERISTICS (TA = 25C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 35 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 20 40 60 80 30 25 20 15 10 5 0 100 120 140 160 0 20 40 TC - Case Temperature - C 60 80 100 120 140 160 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 d ite ) im 0 V )L 1 = (on S S RD t V G ID(DC) (a 10 PW ID(pulse) =1 0 s 10 0 s 1m 10 DC s ms 1 TC = 25C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W ID - Drain Current - A 1000 Rth(ch-A) = 125C/W 100 10 Rth(ch-C) = 5.0C/W 1 0.1 0.01 0.001 10 Single Pulse 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D13797EJ3V0DS 3 2SK3224 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 Pulsed TA = -50C 25C 75C 150C 1 0 2 Pulsed VDS = 10 V 6 8 4 RDS(on) - Drain to Source On-State Resistance - m 40 VGS = 4.0 V 0 2 4 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 Pulsed TA = 150C 75C 25C -50C 1 VDS = 10 V Pulsed 10 1 100 50 40 ID = 10 A 30 20 10 0 0 Pulsed 70 60 50 VGS = 4.0 V VGS = 10 V 20 10 1 10 10 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 80 30 5 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0 0.1 1 0 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A 4 60 VDS - Drain to Source Voltage - V 10 40 VGS = 10 V VGS - Gate to Source Voltage - V 100 0.1 0.1 80 20 RDS(on) - Drain to Source On-State Resistance - m 0.1 | yfs | - Forward Transfer Admittance - S ID - Drain Current - A 10 100 VGS(off) - Gate to Source Cut-off Voltage - V ID - Drain Current - A 100 VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 -50 0 50 100 Tch - Channel Temperature - C ID - Drain Current - A Data Sheet D13797EJ3V0DS 150 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1000 90 80 ISD - Diode Forward Current - A 70 60 VGS = 4.0 V 50 40 VGS = 10 V 30 20 10 0 Pulsed 100 VGS = 10 V 10 VGS = 0 V 1 ID = 10 A -50 0 50 100 0.1 0 150 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 VGS = 0 V f = 1 MHz 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 Ciss Coss 100 10 0.1 Crss 1 10 100 VDD = 30 V VGS = 10 V RG = 10 tr tf 100 td(off) td(on) 10 1 0.1 1 REVERSE RECOVERY TIME vs. DRAIN CURRENT VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/s VGS = 0 V 10 1 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 80 100 1 0.1 10 ID - Drain Current - A VDS - Drain to Source Voltage - V 1000 1.5 1.0 0.5 100 14 60 VGS VDD = 48 V 30 V 12 V 12 10 8 40 6 4 20 2 VDS 0 0 IF - Drain Current - A 10 ID = 20 A 20 30 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m 2SK3224 0 40 QG - Gate Charge - nC Data Sheet D13797EJ3V0DS 5 2SK3224 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 160 IAS = 10 A 10 EAS =1 0m J 1 RG = 25 VDD = 30 V VGS = 20 0 V Starting Tch = 25C 0.1 10 100 1m L - Inductive Load - H 6 Energy Derating Factor - % | IAS | - Single Avalanche Current - A 100 10 m VDD = 30 V RG = 25 VGS = 20 0 V IAS 10 A 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - C Data Sheet D13797EJ3V0DS 2SK3224 PACKAGE DRAWINGS (Unit: mm) 2) TO-252 (MP-3Z) 1) TO-251 (MP-3) 1.10.2 +0.2 +0.2 0.5-0.1 0.5-0.1 0.75 2.3 2.3 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 +0.2 2.30.2 1.0 MIN. 1.8 TYP. 0.50.1 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.7 1 1.5-0.1 +0.2 0.8 4.3 MAX. 1.10.2 13.7 MIN. 3 5.50.2 2 7.0 MIN. 1 4 5.50.2 10.0 MAX. 6.50.2 5.00.2 0.50.1 4 2.0 MIN. 5.00.2 2.30.2 1.5-0.1 6.50.2 1.60.2 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D13797EJ3V0DS 7 2SK3224 * The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. 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The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). 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