ZTX789A PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR UNIT CONDITIONS. MHz IC=-50mA, VCE=-5V f=50MHz 225 pF VEB=-0.5V, f=1MHz Cobo 25 pF VCB=-10V, f=1MHz ISSUE 2 APRIL 94 FEATURES * 25 Volt VCEO * Gain of 200 at IC=2 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits * Motor drivers ton toff 35 400 ns ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V ABSOLUTE MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER SYMBOL MIN. Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX. *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Junction to Case 175 116 70 ZTX789A C B E E-Line TO92 Compatible PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -25 UNIT Collector-Emitter Voltage VCEO -25 V C/W C/W C/W Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -8 A Continuous Collector Current IC -3 A Practical Power Dissipation* Ptotp 1.5 W Ptot 1 5.7 W mW/C -55 to +200 C Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Power Dissipation at Tamb=25C derate above 25C Tj:Tstg Operating and Storage Temperature Range *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25C) 200 Thermal Resistance (C/W) Max Power Dissipation - (Watts) 2.5 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-277 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -25 TYP. MAX. V IC=-100A Collector-Emitter Breakdown Voltage V(BR)CEO -25 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100A Collector Cut-Off Current ICBO -0.1 A VCB=-15V Emitter Cut-Off Current IEBO -0.1 A VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.45 -0.5 V V V IC=-1A, IB=-10mA* IC=-2A, IB=-20mA* IC=-3A, IB=-100mA* Base-Emitter Saturation Voltage VBE(sat) -1.0 V IC=-1A, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE -0.8 300 250 200 100 3-276 800 IC=-10mA, VCE=-2V IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* ZTX789A PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR UNIT CONDITIONS. MHz IC=-50mA, VCE=-5V f=50MHz 225 pF VEB=-0.5V, f=1MHz Cobo 25 pF VCB=-10V, f=1MHz ISSUE 2 APRIL 94 FEATURES * 25 Volt VCEO * Gain of 200 at IC=2 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits * Motor drivers ton toff 35 400 ns ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V ABSOLUTE MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER SYMBOL MIN. Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX. *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Junction to Case 175 116 70 ZTX789A C B E E-Line TO92 Compatible PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -25 UNIT Collector-Emitter Voltage VCEO -25 V C/W C/W C/W Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -8 A Continuous Collector Current IC -3 A Practical Power Dissipation* Ptotp 1.5 W Ptot 1 5.7 W mW/C -55 to +200 C Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Power Dissipation at Tamb=25C derate above 25C Tj:Tstg Operating and Storage Temperature Range *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25C) 200 Thermal Resistance (C/W) Max Power Dissipation - (Watts) 2.5 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-277 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -25 TYP. MAX. V IC=-100A Collector-Emitter Breakdown Voltage V(BR)CEO -25 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100A Collector Cut-Off Current ICBO -0.1 A VCB=-15V Emitter Cut-Off Current IEBO -0.1 A VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.45 -0.5 V V V IC=-1A, IB=-10mA* IC=-2A, IB=-20mA* IC=-3A, IB=-100mA* Base-Emitter Saturation Voltage VBE(sat) -1.0 V IC=-1A, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE -0.8 300 250 200 100 3-276 800 IC=-10mA, VCE=-2V IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* ZTX789A TYPICAL CHARACTERISTICS 1.8 1.6 1.8 IC/IB=100 IC/IB=40 IC/IB=10 Tamb=25C 1.6 1.4 VCE(sat) - (Volts) VCE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.8 0.6 0.4 0.2 0 0.1 1 0.01 1 10 VCE(sat) v IC VCE(sat) v IC VCE=2V 1.6 750 1.0 500 0.8 0.6 250 0.4 VBE(sat) - (Volts) 1.2 1.4 0.2 -55C +25C +100C +175C IC/IB=100 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 10 1 0 VBE(sat) v IC -55C +25C +100C VCE=2V 1.4 1.0 0.8 0.6 0.4 0.2 0 1 hFE v IC 1.2 0 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) 1.6 0.01 IC - Collector Current (Amps) 10 VBE - (Volts) 0.1 IC - Collector Current (Amps) hFE - Typical Gain 1.4 10 IC - Collector Current (Amps) +100C +25C -55C 1.6 hFE - Normalised Gain 1.0 0.2 0.01 0 IC/IB=100 1.2 0.4 0 -55C +25C +100C +175C 0.01 0.1 1 IC - Collector Current (Amps) Single Pulse Test at Tamb=25C 1 0.1 0.01 0.1 10 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1 10 VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-278 10 100