2008. 11. 20 1/4
SEMICONDUCTOR
TECHNICAL DATA
KRC827U~KRC829U
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
·High Packing Density.
DIM MILLIMETERS
A
B
D
G
US6
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
A
H
T
6
4
C
C
A1
1.3 0.1A1
5
+
_
+
_
+
_
+
_
+
_
1. Q COMMON (EMITTER)
2. Q COMMON (EMITTER)
3. Q IN (BASE)
4. Q OUT (COLLECTOR)
5. Q IN (BASE)
6. Q OUT (COLLECTOR)
1
1
1
2
2
2
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25℃)
BIAS RESISTOR VALUES
R1
R2
COMMON
OUT
IN
MARK SPEC
123
456
Lot No.
Type Name
1
Q1
23
65 4
Q2
EQUIVALENT CIRCUIT (TOP VIEW)
TYPE NO. R1(kΩ) R2(kΩ)
KRC827U 10 47
KRC828U 22 47
KRC829U 47 22
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage KRC827U～829U VO50 V
Input Voltage
KRC827U
VI
30, -6
VKRC828U 40, -7
KRC829U 40,-15
Output Current
KRC827U～829U
IO100 mA
Power Dissipation PD *200 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
TYPE KRC827U KRC828U KRC829U
MARK YH YI YJ
* Total Rating.
Marking
2008. 11. 20 2/4
KRC827U~KRC829U
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : * Characteristic of Transistor Only.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current KRC827U～829U IO(OFF) VO=50V, VI=0 - - 500 nA
DC Current Gain
KRC827U
GIVO=5V, IO=10mA
80 150 -
KRC828U 80 150 -
KRC829U 70 140 -
Output Voltage KRC827U～829U VO(ON) IO=10mA, II=0.5mA - 0.1 0.3 V
Input Voltage (ON)
KRC827U
VI(ON) VO=0.2V, IO=5mA
- 1.2 1.8
VKRC828U - 1.8 2.6
KRC829U - 3.0 5.8
Input Votlage (OFF)
KRC827U
VI(OFF) VO=5V, IO=0.1mA
0.5 0.75 -
VKRC828U 0.6 0.88 -
KRC829U 1.5 1.82 -
Transition Frequency KRC827U～829U fT * VO=10V, IO=5mA - 200 - MHz
Input Current
KRC827U
IIVI=5V
- - 0.88
mAKRC828U - - 0.36
KRC829U - - 0.16
Switching
Time
Rise
Time
KRC827U
tr
VO=5V, VIN=5V
RL=1kΩ
- 0.05 -
μS
KRC828U - 0.12 -
KRC829U - 0.26 -
Storage
Time
KRC827U
tstg
- 2.0 -
KRC828U - 2.4 -
KRC829U - 1.5 -
Fall
Time
KRC827U
tf
- 0.36 -
KRC828U - 0.4 -
KRC829U - 0.41 -
Input Resistor
KRC827U
R1 -
7 10 13
kΩ
KRC828U 15.4 22 28.6
KRC829U 32.9 47 61.1
Resistor Ratio
KRC827U
R2/R1 -
3.7 4.7 5.7
KRC828U 1.7 2.1 2.6
KRC829U 0.37 0.47 0.57
2008. 11. 20 3/4
KRC827U~KRC829U
Revision No : 3
IO - VI(ON)
INPUT ON VOLTAGE VI(ON) (V)
INPUT ON VOLTAGE VI(ON) (V)
INPUT ON VOLTAGE VI(ON) (V)
0.1 0.3 1 3
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (mA)
IO - VI(ON)
IO - VI(ON)
INPUT OFF VOLTAGE VI(OFF) (V)
OUTPUT CURRENT IO (µA)
IO - VI(OFF)
INPUT OFF VOLTAGE VI(OFF) (V)
OUTPUT CURRENT IO (µA)
IO - VI(OFF)
10 30 100
0.3
0.5
1
3
5
10
30
50
V =0.2V
O
Ta=100 C
Ta=25 C
Ta=-25 C
-25 25
100
Ta=-25 C
Ta=25 C
Ta=100 C
O
V =0.2V
50
30
10
5
3
1
0.5
0.3
1003010
310.30.1
Ta=-25 C
Ta=25 C
Ta=100 C
O
V =0.2V
50
30
10
5
3
1
0.5
0.3
1003010
310.30.1
KRC827U
KRC828U
KRC829U
O
V =5V
KRC828U
3k
1k
500
300
100
50
1.61.41.21.00.80.60.40.2
0
30
O
V =5V
KRC829U
3k
1k
500
300
100
50
3.02.62.21.81.41.00.60.2
30
Ta=100 C
Ta=25 C
Ta=-25 C
3.4
Ta=100 C
Ta=25 C
Ta=-25 C
INPUT OFF VOLTAGE VI(OFF) (V)
OUTPUT CURRENT IO (µA)
IO - VI(OFF)
O
V =5V
KRC827U
3k
1k
500
300
100
50
1.61.41.21.00.80.60.40.2
0
30
Ta=100 C
Ta=25 C
Ta=-25 C
2008. 11. 20 4/4
KRC827U~KRC829U
Revision No : 3
GI - IO
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (mA)
1 3 10 30
DC CURRENT GAIN GI
DC CURRENT GAIN GI
DC CURRENT GAIN GI
GI - IO
GI - IO
100
30
50
100
300
500
1k KRC827U KRC828U
1k
500
300
100
50
20
V =5V
O
Ta=100 C
Ta=25 C
Ta=-25 C
13
10 30 100
1k
500
300
100
50
20
100301031
KRC829U
O
V =5V
Ta=100 C
Ta=25 C
Ta=-25 C
O
V =5V
Ta=100 C
Ta=25 C
Ta=-25 C
