NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switch mode applications. Features: D Fast Turn-Off Times Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector-Emitter Voltage (VBE = -1.5V), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Total Power Dissipation (TC = +100C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275C Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCEO(sus) IC = 200mA, IB = 0, L = 25mH 400 - - V VCEX = 850V, VBE(off) = 1.5V - - 0.2 mA VCEV = 850V, VBE(off) = 1.5V, TC = +125C - - 2.0 mA VCE = 850V, RBE = 10 - - 0.5 mA VCE = 850V, RBE = 10, TC = +100C - - 3.0 mA VBE = 5V, IC = 0 - - 0.1 mA IE = 50mA, -IC = 0 7 - - V OFF Characteristics (Note 2) Collector-Emitter Sustaining Voltage Collector Cutoff Current ICEX ICER Emitter Cutoff Current Emitter-Base Breakdown Voltage IEBO V(BR)EBO Note 2. Pulse test: Pulse Width = 300s, Duty Cycle 2%, Vcl = 300V, VBE(off) = 5V, LC = 180H. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 5V, IC = 10A 8 - - IC = 10A, IB = 2A - - 1.5 V IC = 10A, IB = 2A, TC = +100C - - 2.0 V IC = 8A, IB = 1.6A - - 1.5 V IC = 8A, IB = 1.6A, TC = +100C - - 2.0 V IC = 10A, IB = 2A - - 1.6 V IC = 10A, IB = 2A, TC = +100C - - 1.6 V VCB = 10V, IE = 0, ftest = 1kHz - - 350 pF VCC = 300V, IC = 10A, IB = 2A, tp = 30s, Duty Cycle = 2%, VBE(off) = 5V - 0.1 0.2 s - 0.4 0.7 s ON Characteristics (Note 2) DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) Dynamic Characteristics Output Capacitance Cob Switching Characteristics (Resistive Load) Delay Time td Rise Time tr Storage Time ts - 1.3 2.0 s Fall Time tf - 0.2 0.4 s - 1.3 - s - 0.06 - s - 1.5 2.5 s Switching Characteristics (Inductive Load, Clamped) Storage Time tsv Fall Time tfi Storage Time tsv Crossover Time tc - 0.3 0.6 s Fall Time tfi - 0.17 0.35 s IC = 10A, IB1 = 2A, TC = +25C IC = 10A, IB1 = 2A, TC = +100C Note 2. Pulse test: Pulse Width = 300s, Duty Cycle 2%, Vcl = 300V, VBE(off) = 5V, LC = 180H. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane COLLECTOR .312 (7.93) Min BASE Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) EMITTER .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case