NTE385
Silicon NPN Transistor
Audio Power Amp, Switch
Description:
The NTE385 is a silicon NPN transistor in a T O3 type package designed for high voltage, high speed,
power switching in inductive circuits where fall time is critical. It is particularly suited for line operated
switch mode applications.
Features:
DFast Turn–Off Times
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage (VBE = –1.5V), VCEX 850V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB 7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overload 60A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB
Continuous 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD175W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 1.0W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +100°C), PD100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL+275°C. . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, L = 25m H 400 – – V
Collector Cutoff Current ICEX VCEX = 850V, VBE(off) = 1.5V – – 0.2 mA
VCEV = 850V, VBE(off) = 1.5V, TC = +1 25°C – – 2.0 mA
ICER VCE = 850V, RBE = 10Ω– – 0.5 mA
VCE = 850V, RBE = 10Ω, TC = +100°C – – 3.0 mA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 0.1 mA
Emitter–Base Breakdown Voltage V(BR)EBO IE = 50mA, –IC = 0 7 – – V
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%, Vcl = 300V, VBE(off) = 5V, LC = 180µH.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain hFE VCE = 5V, IC = 10 A 8– –
Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 2A – – 1.5 V
IC = 10A, IB = 2A, TC = +100°C– – 2.0 V
IC = 8A, IB = 1.6A – – 1.5 V
IC = 8A, IB = 1.6A, TC = +100°C– – 2.0 V
Base–Emitter Saturation Voltage VBE(sat) IC = 10A, IB = 2A – – 1.6 V
IC = 10A, IB = 2A, TC = +100°C– – 1.6 V
Dynamic Characteristics
Output Capacitance Cob VCB = 10V, I E = 0, ftest = 1kHz – – 350 pF
Switching Characteristics (Resistive Load)
Delay Time tdVCC = 300V, IC = 1 0A, IB = 2 A,
µ
–0.1 0.2 µs
Rise Time trtp = 30µs, Dut y Cycle = 2%,
V = 5V –0.4 0.7 µs
Storage Time tsVBE(off) = 5V –1.3 2.0 µs
Fall Time tf–0.2 0.4 µs
Switching Characteristics (Inductive Load, Clamped)
Storage Time tsv IC = 10A, IB1 = 2 A, TC = +25°C–1.3 –µs
Fall Time tfi –0.06 –µs
Storage Time tsv IC = 10A, IB1 = 2 A, TC = +100°C–1.5 2.5 µs
Crossover Time tc–0.3 0.6 µs
Fall Time tfi –0.17 0.35 µs
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%, Vcl = 300V, VBE(off) = 5V, LC = 180µH.
1.187
(30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
BASE
COLLECTOR
EMITTER
