D0512 TKIM TC-00002833/31208QB TIIM TC-00001270 No. A0869-1/7
1 : Gate
2 : Drain
3 : Source
4 : Drain
TO-263-2L
10.0
5.3
1.27
0.8
2.54 2.54
13.4
9.2
7.9
1.4 1.2
0 to 0.25
2.4
1.750.9
3.0
1.35
0.254
4.5 8.0
1.3
0.5
123
4
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
July, 2013
2SK4177
N-Channel Power MOSFET
1500V, 2A, 13Ω, TO-263-2L
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
• Package : TO-263-2L
• JEITA, JEDEC : SC-83, TO-263
• Minimum Packing Quantity : 800 pcs./reel
Packing Type: DL Marking
Electrical Connection
Features
• ON-resistance RDS(on)=10Ω(typ.) • Input capacitance Ciss=380pF (typ.)
• 10V drive
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 1500 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID2A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 4 A
Allowable Power Dissipation PDTc=25°C 80 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 41 mJ
Avalanche Current *2 IAV 2A
Note :
*1 VDD=50V, L=20mH, IAV=2A (Fig.1)
*2 L≤20mH, single pulse
Package Dimensions
unit : mm (typ)
7535-001
Ordering number : ENA0869A
2SK4177-DL-1E
DL
1
3
2, 4
K4177
LOT No.
2SK4177
No. A0869-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 1500 V
Zero-Gate Voltage Drain Current IDSS V
DS=1200V, VGS=0V 100 μA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.5 3.5 V
Forward Transfer Admittance | yfs |VDS=20V, ID=1A 0.7 1.4 S
Static Drain-to-Source On-State Resistance
RDS(on) ID=1A, VGS=10V 10 13 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 380 pF
Output Capacitance Coss 70 pF
Reverse Transfer Capacitance Crss 40 pF
Turn-ON Delay Time td(on)
See Fig.2
12 ns
Rise Time tr 37 ns
Turn-OFF Delay Time td(off) 152 ns
Fall Time tf59 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=2A 37.5 nC
Gate-to-Source Charge Qgs 2.7 nC
Gate-to-Drain “Miller” Charge Qgd 20 nC
Diode Forward Voltage VSD IS=2A, VGS=0V 0.88 1.2 V
Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
2SK4177-DL-1E TO-263-2L 800pcs./reel Pb Free
50Ω
10V
0V
≥50Ω
VDD
L
RG
2SK4177
G
S
D
PW≤10μs
D.C.≤1%
P.G 50Ω
G
S
D
ID=1A
RL=190Ω
VDD=200V
VOUT
2SK4177
VIN
10V
0V
VIN
2SK4177
No. A0869-3/7
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Case Temperature, Tc -- °C
Drain Current, ID -- A
Forward Transfer Admittance, yfs -- S
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Gate-to-Source Voltage, VGS -- V
ID -- VDS ID -- VGS
RDS(on) -- VGS RDS(on) -- Tc
IS -- VSD
yfs -- ID
IT07130 IT07131
IT07132 IT07133
--50 --25 0 25 50 75 100 125 150
0
0
4.0
3.5
3.0
2.5
2.0
1.5
50454010 3052515 20 35
1.0
0.5
0
0
3.0
2.5
2.0
1.5
20181641221068 14
1.0
0.5
10V
8V
0
30
25
10
20
15
5
VGS=4V
5V
6V
IT07135
0.2 0.4 0.6 0.8 1.21.0
0.01
0.1
1.0
10
7
5
3
2
7
5
3
2
7
5
3
2
IT07134
25°C
--25
°
C
Tc=75°C
0.1
357 2357 23
1.0
1.0
2
3
5
7
2
3
5
0.1
VDS=20V
25
°C
Tc= --25°C
75°
C
VGS=0V
ID=1A
VGS=10V
Tc= --25°C
25°C
75°C
0
0
30
25
20
15
20181641221068 14
10
5
ID=1A
Tc=75°C
25°C
--25°C
Tc=25°C
pulse VDS=20V
pulse
Drain Current, ID -- A
Switching Time, SW Time -- ns
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
IT09037
VDD=200V
VGS=10V
td(off)
tf
tr
td(on)
IT09038
f=1MHz
Ciss
Coss
Crss
100
10
3
2
3
2
5
5
7
0.1 1.0
23 57 23 0
7
100
10
1000
7
5
5
3
2
5
3
2
3
2
5030515202535404510
2SK4177
No. A0869-4/7
2
3
5
7
2
0.1
3
5
7
2
1.0
0.01 223 57
1.0 10 2357
100 2357
1k 3
IT16905
Operation in this area
is limited by RDS(on).
10μs
100μs
1ms
10ms
100ms
ID=2A
IDP=4A(PW≤10μs)
DC operation
3
5
7
10
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
A S O
VGS -- Qg
PD -- Tc IT07138
0
0
1
2
3
4
5
6
7
8
40
10
9
10 20 30
VDS=200V
ID=2A
EAS -- Ta
Avalanche Energy derating factor -- %
Ambient Temperature, Ta -- °C
0
025 50 75 100 125 150
100
80
60
20
40
120
17
5
IT10478
IT12898
100
80
60
40
20
00 20 40 60 80 100 120 140 160
Tc=25°C
Single pulse
2SK4177
No. A0869-5/7
Taping Specifi cation
2SK4177-DL-1E
2SK4177
No. A0869-6/7
Outline Drawing Land Pattern Example
2SK4177-DL-1E
Mass (g) Unit
1.5
* For reference
mm Unit: mm
2SK4177
PS No. A0869-7/7
Note on usage : Since the 2SK4177 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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