©2000 Fairchild Semiconductor International Rev. A, February 2000
BD676A/678A/680A/682
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulse
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD676A
: BD678A
: BD680A
: BD682
- 45
- 60
- 80
- 100
V
V
V
V
VCEO Collector-Emitter Voltage : BD676A
: BD678A
: BD680A
: BD682
- 45
- 60
- 80
- 100
V
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 4 A
ICP *Collector Current (Pulse) - 6 A
IB Base Current - 100 mA
PC Collector Dissipation (TC=25°C) 40 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition M in. Typ. M ax. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: BD676A
: BD678A
: BD680A
: BD682
IC = - 50mA, IB = 0 - 4 5
- 60
- 80
- 100
ICBO Collect or-B ase Voltage : BD676A
: BD678A
: BD680A
: BD682
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, VBE = 0
- 200
- 200
- 200
- 200
µA
µA
µA
µA
ICEO Collector Cut-off Current : BD676A
: BD678A
: BD680A
: BD682
VCE = - 45V, VBE = 0
VCE = - 60V, VBE = 0
VCE = - 80V, VBE = 0
VCE = - 100V, VBE = 0
- 500
- 500
- 500
- 500
µA
µA
µA
µA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 2 mA
hFE * DC Current Gain : BD676A/678A/680A
: BD682 VCE = - 3V, IC = - 2A
VCE = - 3V, IC = - 1.5A 750
750
VCE(sat) * Collector-Emitter Saturation Voltage
: BD676A/678A/680A
: BD682 IC = - 2A, IB = - 40mA
IC = - 1.5A, IB = - 30mA
- 2.8
- 2.5 V
V
VBE(on) * Base-Emitter ON V oltage : BD676A/678A/680A
: BD682 VCE = - 3V, IC = - 2A
VCE = - 3V, I C = - 1 .5A - 2.5
- 2.5 V
V
BD676A/678A/680A/682
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD675A, BD677A, BD679A and BD681 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
BD676A/678A/680A/682
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
-0.1 -1 -10
100
1000
10000
VCE = -3V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4 IC = 250 IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
-0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-3.6
-4.0 VCE = 3V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100 -1000
-0.1
-1
-10
BD678A
10µs
IC(max). Puls ed
BD682
BD680A
BD676A
100µs
1ms
10ms
DC
IC(max). Continuous
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITT ER VOLTAGE
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD676A/678A/680A/682
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2000 Fairchild Semiconductor International Rev. E
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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As used herein:
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor .
The datasheet is printed for reference information only.
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● Complement to BD675A, BD677A,
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Applications
Medium Power Linear and Switching
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● Complement to BD675A, BD677A,
BD679A and BD681 respectively
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Medium Power Linear and Switching
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