H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics. - Minimum 100V for H11G1M - Minimum 80V for H11G2M - Minimum 55V for H11G3M High sensitivity to low input current (Min. 500% CTR at IF = 1mA) Low leakage current at elevated temperature (Max. 100A at 80C) Underwriters Laboratory (UL) recognized File # E90700, Volume 2 IEC 60747-5-2 approved (ordering option V) Applications CMOS logic interface Telephone ring detector Low input TTL interface Power supply isolation Replace pulse transformer Schematic ANODE 1 CATHODE 2 N/C 3 (c)2007 Fairchild Semiconductor Corporation H11G1M, H11G2M, H11G3M Rev. 1.0.4 Package Outlines 6 BASE 5 COLLECTOR 4 EMITTER www.fairchildsemi.com H11G1M, H11G2M, H11G3M -- High Voltage Photodarlington Optocouplers September 2009 Symbol Parameter Value Units TOTAL DEVICE TSTG Storage Temperature -40 to +150 C TOPR Operating Temperature -40 to +100 C TSOL 260 for 10 sec C 260 mW Derate Above 25C 3.5 mW/C IF Forward Input Current 60 mA VR Reverse Input Voltage 6.0 V Forward Current - Peak (1s pulse, 300pps) 3.0 A LED Power Dissipation @ TA = 25C 100 mW 1.8 mW/C H11G1M 100 V H11G2M 80 H11G3M 55 PD Lead Solder Temperature (Wave Solder) Total Device Power Dissipation @ TA = 25C EMITTER IF(pk) PD Derate Above 25C DETECTOR VCEO PD Collector-Emitter Voltage Photodetector Power Dissipation @ TA = 25C Derate Above 25C (c)2007 Fairchild Semiconductor Corporation H11G1M, H11G2M, H11G3M Rev. 1.0.4 200 mW 2.67 mW/C www.fairchildsemi.com 2 H11G1M, H11G2M, H11G3M -- High Voltage Photodarlington Optocouplers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Individual Component Characteristics Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit All 1.3 1.50 All -1.8 mV/C 25 V 50 pF EMITTER VF Forward Voltage VF TA Forward Voltage Temp. Coefficient IF = 10mA BVR Reverse Breakdown Voltage IR = 10A All CJ Junction Capacitance VF = 0V, f = 1MHz All 3.0 VF = 1V, f = 1MHz IR Reverse Leakage Current V 65 VR = 3.0V All 0.001 10 A DETECTOR BVCEO BVCBO BVEBO ICEO Breakdown Voltage Collector to Emitter Collector to Base IC = 1.0mA, IF = 0 IC = 100A H11G1M 100 H11G2M 80 H11G3M 55 H11G1M 100 H11G2M 80 H11G3M 55 All 7 Emitter to Base Leakage Current Collector to Emitter VCE = 80V, IF = 0 H11G1M VCE = 60V, IF = 0 H11G2M VCE = 30V, IF = 0 H11G3M VCE = 80V, IF = 0, TA = 80C H11G1M VCE = 60V, IF = 0, TA = 80C H11G2M V V 10 V 100 nA 100 A Transfer Characteristics Symbol Characteristics Test Conditions Device Min. Typ.* IF = 10mA, VCE = 1V H11G1M/2M 100 (1000) IF = 1mA, VCE = 5V H11G1M/2M 5 (500) H11G3M 2 (200) Max. Units EMITTER CTR VCE(SAT) Current Transfer Ratio, Collector to Emitter Saturation Voltage mA (%) IF = 16mA, IC = 50mA H11G1M/2M 0.85 1.0 IF = 1mA, IC = 1mA H11G1M/2M 0.75 1.0 H11G3M 0.85 1.2 IF = 20mA, IC = 50mA V SWITCHING TIMES tON Turn-on Time tOFF Turn-off Time RL = 100, IF = 10mA, VCE = 5V, f 30Hz, Pulse Width 300s All 5 s All 100 s Isolation Characteristics Symbol Device Min. VISO Isolation Voltage Characteristic f = 60Hz, t = 1 sec. Test Conditions All 7500 Typ.* VACPEAK RISO Isolation Resistance VI-O = 500 VDC All 1011 CISO Isolation Capacitance f = 1MHz All 0.2 Max. Units pF *All Typical values at TA = 25C (c)2007 Fairchild Semiconductor Corporation H11G1M, H11G2M, H11G3M Rev. 1.0.4 www.fairchildsemi.com 3 H11G1M, H11G2M, H11G3M -- High Voltage Photodarlington Optocouplers Electrical Characteristics (TA = 25C unless otherwise specified.) As per IEC 60747-5-2, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 VPR Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC 1594 Vpeak Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC 1275 Vpeak VIORM Max. Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm Insulation Resistance at Ts, VIO = 500V 109 RIO (c)2007 Fairchild Semiconductor Corporation H11G1M, H11G2M, H11G3M Rev. 1.0.4 www.fairchildsemi.com 4 H11G1M, H11G2M, H11G3M -- High Voltage Photodarlington Optocouplers Safety and Insulation Ratings Fig. 2 Normalized Output Current vs. Temperature Fig. 1 Output Current vs. Input Current 100 IC - NORMALIZED OUTPUT CURRENT IC - NORMALIZED OUTPUT CURRENT 10 1 Normalized to: VCE = 5V IF = 1mA 0.1 0.01 0.001 0.1 1 IF = 50mA 10 IF = 5mA IF = 1mA 1 IF = 0.5mA 0.1 0.01 -60 10 -40 0 20 40 60 80 100 120 90 100 Fig. 4 Collector-Emitter Dark Current vs. Ambient Temperature Fig. 3 Output Current vs. Collector - Emitter Voltage 1000 100 Normalized to: VCE = 5V IF = 1mA TA = 25C IF = 50mA ICEO - DARK CURRENT (nA) IC - NORMALIZED OUTPUT CURRENT -20 TA - AMBIENT TEMPERATURE (C) IF - LED INPUT CURRENT(mA) 10 Normalized to: VCE = 5V IF = 1mA TA = 25C IF = 10mA IF = 2mA IF = 1mA 1 IF = 0.5mA 0.1 VCE = 80V 100 VCE = 30V 10 VCE = 10V 1 0.1 0.01 0.01 1 0 10 10 20 30 40 50 60 70 80 TA - AMBIENT TEMPERATURE (C) VCE - COLLECTOR - EMITTER VOLTAGE (V) Fig. 5 Input Current vs. Total Switching Speed (Typical Values) IF - FORWARD CURRENT (mA) 10 RL = 10 RL = 100 RL = 1k 1 Normalized to: VCC = 5V IF = 10mA RL = 100 0.1 0.1 1 10 ton + toff - TOTAL SWITCHING SPEED (NORMALIZED) (c)2007 Fairchild Semiconductor Corporation H11G1M, H11G2M, H11G3M Rev. 1.0.4 www.fairchildsemi.com 5 H11G1M, H11G2M, H11G3M -- High Voltage Photodarlington Optocouplers Typical Performance Curves Through Hole 0.4" Lead Spacing 8.13-8.89 6 4 8.13-8.89 6 4 1 3 6.10-6.60 6.10-6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 0.25-0.36 7.62 (Typ.) 3.28-3.53 5.08 (Max.) 0.25-0.36 3.28-3.53 0.38 (Min.) 2.54-3.81 0.38 (Min.) 2.54-3.81 0.20-0.30 2.54 (Bsc) (0.86) 15 (Typ.) 2.54 (Bsc) (0.86) 0.41-0.51 1.02-1.78 0.20-0.30 0.41-0.51 0.76-1.14 10.16-10.80 1.02-1.78 0.76-1.14 Surface Mount (1.78) 8.13-8.89 6 4 (1.52) (2.54) (7.49) 6.10-6.60 8.43-9.90 (10.54) 1 3 (0.76) Pin 1 Rcommended Pad Layout 0.25-0.36 3.28-3.53 5.08 (Max.) 0.38 (Min.) 0.20-0.30 2.54 (Bsc) (0.86) 0.16-0.88 (8.13) 0.41-0.51 1.02-1.78 0.76-1.14 Note: All dimensions in mm. (c)2007 Fairchild Semiconductor Corporation H11G1M, H11G2M, H11G3M Rev. 1.0.4 www.fairchildsemi.com 6 H11G1M, H11G2M, H11G3M -- High Voltage Photodarlington Optocouplers Package Dimensions Option Order Entry Identifier (Example) No option H11G1M S H11G1SM SR2 H11G1SR2M T H11G1TM 0.4" Lead Spacing V H11G1VM VDE 0884 TV H11G1TVM VDE 0884, 0.4" Lead Spacing SV H11G1SVM VDE 0884, Surface Mount SR2V H11G1SR2VM Description Standard Through Hole Device Surface Mount Lead Bend Surface Mount; Tape and Reel VDE 0884, Surface Mount, Tape and Reel Marking Information 1 V 3 H11G1 2 X YY Q 6 4 5 Definitions 1 (c)2007 Fairchild Semiconductor Corporation H11G1M, H11G2M, H11G3M Rev. 1.0.4 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) 4 One digit year code, e.g., `7' 5 Two digit work week ranging from `01' to `53' 6 Assembly package code www.fairchildsemi.com 7 H11G1M, H11G2M, H11G3M -- High Voltage Photodarlington Optocouplers Ordering Information 12.0 0.1 4.5 0.20 2.0 0.05 O1.5 MIN 4.0 0.1 0.30 0.05 1.75 0.10 11.5 1.0 21.0 0.1 9.1 0.20 O1.5 0.1/-0 10.1 0.20 0.1 MAX 24.0 0.3 User Direction of Feed Reflow Profile 300 260C 280 260 >245C = 42 Sec 240 220 200 180 C Time above 183C = 90 Sec 160 140 120 1.822C/Sec Ramp up rate 100 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) (c)2007 Fairchild Semiconductor Corporation H11G1M, H11G2M, H11G3M Rev. 1.0.4 www.fairchildsemi.com 8 H11G1M, H11G2M, H11G3M -- High Voltage Photodarlington Optocouplers Carrier Tape Specification Auto-SPMTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM* TM* (R) (R) Fairchild Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FETBenchTM FlashWriter(R)* FPSTM F-PFSTM FRFET(R) SM Global Power Resource Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) (R) OPTOPLANAR (R) PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM Sync-LockTM (R) * The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TriFault DetectTM TRUECURRENTTM* SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 (c)2007 Fairchild Semiconductor Corporation H11G1M, H11G2M, H11G3M Rev. 1.0.4 www.fairchildsemi.com 9 H11G1M, H11G2M, H11G3M -- High Voltage Photodarlington Optocouplers TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.