RANSYS MMBTA63 / MMBTA64 ELECTRONICS PNP SURFACE MOUNT DARLINGTON TRANSISTOR LIMITED Features Epitaxial Planar Die Construction SOT-23 Complementary NPN Types Available (MMBTA13 / MMBTA14) | Jeon Dim | Min | Max Ideal for Medium Power Amplification and fe] A | 087 | 0.51 Switching B 1.19 | 1.40 High Current Gain TOP VIEW b C 2.10 | 2.50 - D 0.89 | 1.05 Mechanical Data [B| Lott Y E | o45 | 061 Case: SOT-23, Molded Plastic KS. go G_| 1.78 | 2.05 Terminals: Solderable per MIL-STD-202, Wo H 2.65 | 9.05 Method 208 J 0.013 | 0.15 Terminal Connections: See Diagram ail Ut | oo | 4.10 MMBTA63 Marking: K2E J L > L 045 | 061 MMBTA64 Marking: K3E M 0.076 | 0.178 Weight: 0.008 grams (approx.) All Dimensions in mm Maximum Ratings @ Ta= 25 C unless otherwise specified Characteristic Symbol MMBTA63 MMBTA64 Unit Collector-Base Voltage VcBo -30 Vv Collector-Emitter Voltage VcEO -30 Vv Emitter-Base Voltage VEBO -10 Vv Collector Current - Continuous (Note 1) le -500 mA Power Dissipation (Note 1) Pg 350 mW Thermal Resistance, Junction to Ambient (Note 1) R JA 357 K/AW Operating and Storage and Temperature Range Tj, Tsta -55 to +150 Cc Electrical Characteristics @ Ta = 25 C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Emitter Breakdown Voltage V(BR)CEO -30 V Ic =-100 A Vee = OV Collector Cutoff Current IcBo -100 nA Vos = -30V, le = 0 Emitter Cutoff Current lEBO -100 nA Vep= -10V, Ic = 0 ON CHARACTERISTICS (Note 2) DC Current Gain MMBTA63 5,000 lo = -10MA, Voce = -5.0V MMBTA64 hee 10,000 lo = -10mA, Vce = -5.0V MMBTA63 10,000 lo = -100mA, Vce = -5.0V MMBTA64 20,000 Io = -100mA, Vcr = -5.0V Collector-Emitter Saturation Voltage VcE(SAT) -1.5 Vv Ico = -100mA, Ip =-100 A Base- Emitter Saturation Voltage VBE(SAT) -2.0 Vv I = -100mA, Vce = -5.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fr 125 MHz Woe Sonne Ic =-10mA, Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s, dutycycle 2%.