MBRB1530CT - MBRB1545CT 15A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: MBRB1530CT MBRB1535CT MBRB1540CT MBRB1545CT Features * * * * * * * * Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 150A Peak For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material - UL Flammability Classification 94V-0 E A G 4 H J B 1 2 D2PAK 3 M Mechanical Data * * * * * * D Case: D2PAK Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Approx. Weight: 1.7 grams Mounting Position: Any Marking: Type Number K C L PIN 1 PIN 2 & 4 PIN 3 Maximum Ratings and Electrical Characteristics Min Max A 9.65 10.69 B 14.60 15.88 C 0.51 1.14 D 2.29 2.79 E 4.37 4.83 G 1.14 1.40 H 1.14 1.40 J 8.25 9.25 K 0.30 0.64 L 2.03 2.92 M 2.29 2.79 Dim All Dimensions in mm @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 105C Symbol MBRB 1530CT MBRB 1535CT MBRB 1540CT MBRB 1545CT Unit VRRM VRWM VR 30 35 40 45 V VR(RMS) 21 24.5 28 31.5 V IO 15 A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Voltage, per Element (Note 4) VFM 0.7 V dv/dt 10,000 V/s IRM 0.1 15 mA @ IF = 7.5A Voltage Rate of Change Peak Reverse Current at Rated DC Blocking Voltage @TA = 25C @ TA = 100C Maximum Recovery Time (Note 3) trr 30 ns Typical Junction Capacitance (Note 2) Cj 250 pF RqJT 3.0 K/W Tj, TSTG -65 to +150 C Typical Thermal Resistance Junction to Terminal (Note 1) Operating and Storage Temperature Range Notes: 1. Thermal resistance: junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Reverse recovery test conditions: IF = 0.5A, IR = 1.0A, Irr = 0.25A (see figure 1). 4. 300s pulse width, 2% duty cycle. DS13015 Rev. B-2 1 of 2 www.diodes.com MBRB1530CT-MBRB1545CT a Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) 20 16 12 8 4 0 0 50 100 100 10 1.0 0.1 150 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Fwd Characteristics per Element TC, CASE TEMPERATURE (C) Fig. 1 Fwd Current Derating Curve 1000 Tj = 25C f = 1MHz 8.3 ms single half-sine-wave JEDEC method 250 Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 300 200 150 100 50 100 10 0 10 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) 1 0.1 100 1.0 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 100 10 Tj = 100C Tj = 75C 1.0 Tj = 25C 0.1 0.01 0 40 80 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics, per element DS13015 Rev. B-2 2 of 2 www.diodes.com MBRB1530CT-MBRB1545CT