PROCESS CP225 Small Signal Transistor NPN- Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19.75 x 19.75 MILS Die Thickness 9.5 MILS Base Bonding Pad Area 4.3 x 4.3 MILS Emitter Bonding Pad Area 4.3 x 4.3 MILS Top Side Metalization Al - 30,000A Back Side Metalization Au - 12,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 28,960 PRINCIPAL DEVICE TYPES 2N2218A 2N2221A 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (15 -November 2001)