145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS CP225
Small Signal Transistor
NPN- Amp/Switch Transistor Chip
PRINCIPAL DEVICE TYPES
2N2218A
2N2221A
GEOMETRY
PROCESS DETAILS
R0 (15 -November 2001)
Process EPITAXIAL PLANAR
Die Size 19.75 x 19.75 MILS
Die Thickness 9.5 MILS
Base Bonding Pad Area 4.3 x 4.3 MILS
Emitter Bonding Pad Area 4.3 x 4.3 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 12,000Å
GROSS DIE PER 4 INCH WAFER
28,960
