AUIRF7316Q
VDSS -30V
RDS(on) typ. 0.042
ID -4.9A
max. 0.058
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest
processing techniques to achieve extremely low on-resistance per
silicon area. Additional features of these Automotive qualified
HEXFET Power MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a
wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
VDS Drain-Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -4.9
A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -3.9
IDM Pulsed Drain Current -30
IS Continuous Source Current (Diode Conduction) -2.5
PD @TA = 25°C Maximum Power Dissipation 2.0
PD @TA = 70°C Maximum Power Dissipation 1.3
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 140 mJ
IAR Avalanche Current -2.8 A
EAR Repetitive Avalanche Energy 0.20 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
W
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
RJA Junction-to-Ambient ––– 62.5
SO-8
AUIRF7316Q
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRF7316Q SO-8 Tape and Reel 4000 AUIRF7316QTR
G D S
Gate Drain Source
D1
D1
D
2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
AUIRF7316Q
2 2015-9-30
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
Starting TJ = 25°C, L = 35mH, RG = 25, IAS = -2.8A.
ISD -2.8A, di/dt 150A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
Surface mounted on FR-4 board , t sec.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 0.042 0.058 VGS = -10V, ID = -4.9A
––– 0.076 0.098 VGS = -4.5V, ID = -3.6A
VGS(th) Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA
gfs Forward Trans conductance ––– 7.7 ––– S VDS = -15V, ID = -4.9A
IDSS Drain-to-Source Leakage Current ––– ––– -1.0 µA VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V,VGS = 0V,TJ =55°C
IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 23 34
nC
ID = -4.9A
Qgs Gate-to-Source Charge ––– 3.8 5.7
VDS = -15V
Qgd Gate-to-Drain Charge ––– 5.9 8.9 VGS = -10V, See Fig.10
td(on) Turn-On Delay Time ––– 13 19
ns
VDD = -15V
tr Rise Time ––– 13 20 ID = -1.0A
td(off) Turn-Off Delay Time ––– 34 51 RG = 6.0
tf Fall Time ––– 32 48 RD = 15
Ciss Input Capacitance ––– 710 –––
pF
VGS = 0V
Coss Output Capacitance ––– 380 ––– VDS = -25V
Crss Reverse Transfer Capacitance ––– 180 ––– ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– -2.5
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– -30 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– -0.78 -1.0 V TJ = 25°C,IS = -1.7A,VGS = 0V
trr Reverse Recovery Time ––– 44 66 ns TJ = 25°C ,IF = -1.7A,
Qrr Reverse Recovery Charge ––– 42 63 nC di/dt = 100A/µs
AUIRF7316Q
3 2015-9-30
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics Fig. 4 Typical Source-Drain Diode
Forward Voltage
Fig. 1 Typical Output Characteristics
1
10
100
0.1 1 10
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOT T OM - 3.0V
1
10
100
0.1 1 10
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOT T OM - 3.0V
20µs PULSE WIDTH
T = 150°C
J
1
10
100
3.0 3.5 4.0 4.5 5.0 5.5 6.0
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -10V
20µs PULSE WIDTH
DS
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
AUIRF7316Q
4 2015-9-30
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig. 7 Typical On-Resistance Vs. Gate Voltage
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
4.9A
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.3A
-2.2A
-2.8A
AUIRF7316Q
5 2015-9-30
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
010 20 30 40
0
4
8
12
16
20
Q , Total Gate Char ge ( nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-4.9A
V =-15V
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Not es:
1. Dut y factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRF7316Q
6 2015-9-30
SO-8 Part Marking Information
SO-8 Package Outline (Dimensions are shown in millimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSIN C H ES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C AB
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
N O TES:
1. D IM EN SIO N IN G & TO LERAN C IN G PER ASM E Y14.5M -1994.
2. CONTROLLING DIM ENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIM ETERS [INCHES].
5 DIM EN SIO N D O ES N O T IN C LUD E M O LD PRO TRUSIO N S.
6 DIM EN SIO N D O ES N O T IN C LUD E M O LD PRO TRUSIO N S.
M O LD PRO TRU SIO N S N O T TO EXC EED 0.25 [.010].
7 D IM EN SIO N IS TH E LEN G TH O F LEAD FO R SO LD ERIN G TO
A S U B S T R A T E .
M O LD PRO TRU SIO N S N O T TO EXC EED 0.15 [.006].
8X 1.78 [.070]
AUIRF7316Q
7 2015-9-30
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
AUIRF7316Q
8 2015-9-30
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level SO-8 MSL1
ESD
Machine Model Class M2 (+/- 200V)†
AEC-Q101-002
Human Body Model Class H1A (+/- 500V)†
AEC-Q101-001
Charged Device Model Class C5 (+/- 2000V)†
AEC-Q101-005
RoHS Compliant Yes
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
9/30/2015 Updated datasheet with corporate template
Corrected ordering table on page 1.
4/3/2014
Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated part marking on page 6.
Updated data sheet with new IR corporate template
† Highest passing voltage.
