© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3 1Publication Order Number:
MMBF5484LT1/D
MMBF5484LT1
Preferred Device
JFET Transistor
N−Channel
Features
•Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Gate Voltage VDG 25 Vdc
Reverse Gate−Source Voltage VGS(r) 25 Vdc
Forward Gate Current IG(f) 10 mAdc
Continuous Device Dissipation at or Below
TC = 25°C
Linear Derating Factor
PD200
2.8 mW
mW/°C
Storage Channel Temperature Range Tstg −65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Res istance, Junction−to−Ambient RqJA 556 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
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SOT−23 (TO−236)
CASE 318
STYLE 10
Device Package Shipping†
ORDERING INFORMATION
MMBF5484LT1 SOT−23 3,000 / Tape & Ree
l
† For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBF5484LT1G SOT−23
(Pb−Free) 3,000 / Tape & Ree
l
Preferred devices are recommended choices for future use
and best overall value.
12
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
M6B M G
G
M6B = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
2 SOURCE
3
GATE
1 DRAIN
MMBF5484LT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (IG = −1.0 mAdc, VDS = 0) V(BR)GSS −25 − Vdc
Gate Reverse Current (VGS = −20 Vdc, VDS = 0)
(VGS = −20 Vdc, VDS = 0, TA = 100°C) IGSS −
−−1.0
−0.2 nAdc
mAdc
Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS(off) −0.3 −3.0 Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 1.0 5.0 mAdc
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |Yfs| 3000 6000 mmhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |yos| − 50 mmhos
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss − 5.0 pF
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz) Crss − 1.0 pF
Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Coss − 2.0 pF
f, FREQUENCY (MHz)
30
10
bis @ IDSS
f, FREQUENCY (MHz)
5.0
Figure 1. Input Admittance (yis) Figure 2. Reverse Transfer Admittance (yrs)
COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
f, FREQUENCY (MHz)
20
f, FREQUENCY (MHz)
10
Figure 3. Forward Transadmittance (yfs) Figure 4. Output Admittance (yos)
gis, INPUT CONDUCTANCE (mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20 30 50 70 100 200 300 500 700 1000
bis, INPUT SUSCEPTANCE (mmhos)
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
|bfs|, FORWARD SUSCEPTANCE (mmhos)
grs, REVERSE TRANSADMITTANCE (mmhos)
brs, REVERSE SUSCEPTANCE (mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
gos, OUTPUT ADMITTANCE (mhos)
bos, OUTPUT SUSCEPTANCE (mhos)
3.0
0.05
0.07
0.1
0.2
0.3
0.7
0.5
1.0
2.0
10 20 30 50 70 100 200 300 500 700 1000
10 20 30 50 70 100 200 300 500 700 1000 0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10 20 30 50 70 100 200 300 500 700 1000
bis @ 0.25 IDSS
gis @ IDSS
gis @ 0.25 IDSS
brs @ IDSS
0.25 IDSS
grs @ IDSS, 0.25 IDSS
gfs @ IDSS
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
bos @ IDSS and 0.25 IDSS
gos @ IDSS
gos @ 0.25 IDSS
gfs @ 0.25 IDSS
MMBF5484LT1
http://onsemi.com
3
Figure 5. S11s Figure 6. S12s
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
1.0
0.9
0.8
0.7
0.6
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.6
0.5
0.4
0.3
0.3
0.4
0.5
0.6
900 900
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
ID = 0.25 IDSS
ID = IDSS
100
200
300
400
600 700
800
900
500
ID = IDSS, 0.25 IDSS
900
500
800
700
600
500
400
300 200
100
ID = 0.25 IDSS
ID = IDSS 100
200
300
400
900
600
700
800
900
800
600
400
300
200
200
100 ID = 0.25 IDSS
ID = IDSS
900
100 500
700
300
400
500
600
700
800
Figure 7. S21s Figure 8. S22s
COMMON SOURCE CHARACTERISTICS
S−PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
MMBF5484LT1
http://onsemi.com
4
f, FREQUENCY (MHz)
10
gig @ IDSS
f, FREQUENCY (MHz)
0.5
Figure 9. Input Admittance (yig) Figure 10. Reverse Transfer Admittance (yrg)
COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)
f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 11. Forward Transfer Admittance (yfg) Figure 12. Output Admittance (yog)
gig, INPUT CONDUCTANCE (mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20 30 50 70 100 200 300 500 700 1000
big, INPUT SUSCEPTANCE (mmhos)
gfg, FORWARD TRANSCONDUCTANCE (mmhos)
bfg, FORWARD SUSCEPTANCE (mmhos)
grg, REVERSE TRANSADMITTANCE (mmhos)
brg, REVERSE SUSCEPTANCE (mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
gog, OUTPUT ADMITTANCE (mmhos)
bog, OUTPUT SUSCEPTANCE (mmhos)
0.3
0.01
0.1
0.2
10 20 30 50 70 100 200 300 500 700 1000
10 20 30 50 70 100 200 300 500 700 1000 0.01
0.02
0.03
0.3
10 20 30 50 70 100 200 300 500 700 1000
big @ 0.25 IDSS
big @ IDSS
grg @ 0.25 IDSS
gfg @ IDSS
gfg @ 0.25 IDSS
brg @ 0.25 IDSS
bog @ IDSS, 0.25 IDSS
gog @ IDSS
gog @ 0.25 IDSS
0.2 0.005
0.007
0.02
0.03
0.05
0.07
0.1
0.05
0.07
0.1
0.2
0.5
0.7
1.0
brg @ IDSS
0.25 IDSS
gig @ IDSS, 0.25 IDSS
bfg @ IDSS
MMBF5484LT1
http://onsemi.com
5
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
Figure 13. S11g Figure 14. S12g
Figure 15. S21g Figure 16. S22g
0.7
0.6
0.5
0.4
0.3
0.04
0.5
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.03
0.02
0.01
0.0
0.01
0.02
0.03
0.04
0.1
900
900
800
700
600
500
300
200
100
800
700
600
500
400
300
200
100
ID = 0.25 IDSS
ID = IDSS
100 200 300 400
500
600
700
800
900
900
600
700
800
ID = 0.25 IDSS
ID = IDSS
100
900
100
900
ID = 0.25 IDSS
ID = IDSS
1.5
100 400
500
600 700
800 900
ID = IDSS, 0.25 IDSS
COMMON GATE CHARACTERISTICS
S−PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
MMBF5484LT1
http://onsemi.com
6
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.029
c
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
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MMBF5484LT1/D
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