55C_ Dim. Inches Millimeter P N Minimum Maximum Minimum Maximum Notes =| A --- --- --- --- 1 B 1.050 1.060 26.67 26.92 C --- 1.161 --- 29.49 D 5.850 6.144 149.10 156.06 E 6.850 7.375 173.99 187.33 F 197 .827 20.24 21.01 G .276 .286 701 7.26 E H --- 948 --- 24.08 J 425 .499 10.80 12.67 2 K .260 .280 6.60 7.11 Dia. M 900 -600 12.70 15.24 N .140 150 3.56 3.81 P --- 295 --- 7.49 R --- .900 --- 22.86 Dia. S 225 275 6.48 6.99 z 3 T --- 1.750 --- 44.45 U 370 .380 9.40 9.65 TO-208AD I TO-209AC | V 213 .223 5.41 5.66 Dia. (TO-83) (TO-94) W .065 .075 1.65 1.91 Dia. X 215 225 5.46 5.72 Note 1: 1/2-20 UNF-3A Y .290 315 7.37 8.00 Note 2: Full thread within 2 1/2 threads Z 514 .530 13.06 13.46 Note 3: For insulated cathode lead, AA .089 .099 2.26 2.51 add suffix IL to catalog number Microsemi Forward & Reverse Reverse Transient e High dv/dt-200 V/usec. Catalog Number Repetitive Blocking Blocking 1200 Amperes surge current eens Lead cece 500 700 Low forward on-state voltage j j _ 55C80B SSCBOBF 300 900 Fackage conforming to either TO209AC or 55C100B 55C100BF 1000 1100 ef ical f h trol 55C120B 55C120BF 1200 1300 coolications or genera purpose phase contro To specify dv/dt higher than 200V/usec., contact factory. PP Electrical Characteristics Max. RMS on-state current IT(RMS) 86 Amps Te = 70C Max. average on-state cur. yay) 55 Amps Tc = 70C Max. peak on-state voltage VT 1.6 Volts TM = 220 A(peak) Max. holding current Iq 200 mA Max. peak one cycle surge current ITSM =: 1200 A Tc = 70C, 60Hz Max. I2t capability for fusing I2t 6000A2S t = 8.3 ms Thermal and Mechanical Characteristics Operating junction temp range Ty 65C to 125C Storage temperature range TSTG -65C to 150C Maximum thermal resistance Reuc 0.32C/W Junction to case Typical thermal resistance (greased) Recs 0.20C/W Case to sink Mounting torque 100-130 inch pounds Weight 55C-B Approx. 3.6 ounces (102.0 grams) typical 55CBF Approx. 3.24 ounces (91.8 grams) typical LAWRENCE & Lake Street | awrence, MICFOSCIM| GH sm 04-25-07 Row 2 FAX: (978) 689-0803 www.microsemi.comDOU Switching Critical rate of rise of on-state current (note 1) di/dt 100A /usec. TJ = 125C Typical delay time (note 1) td 3.0 usec. 5 Typical circuit commuted turnoff time (note 2) tq 100 usec. TJ = 125C Note 1: 'TM = 50A, YD = VDRM. YGT = 12V open circuit, 20 ohm0.1 usec. rise time Note 2: 'TM = 50A, di/dt = 5A /usec., VR during turnoff interval = 5OV min., reapplied dv/dt = 20V/usec., linear to rated VDRM, VGT = OV Triggering Max. gate voltage to trigger VeT 3.0V Ty = 25C Max. nontriggering gate voltage Ved 0.25V TJ = 125C Max. gate current to trigger | GT 100mA Ty = 25C Max. peak gate power Pom 15W Average gate power PG(AV) 3.0W tp = 10 usec. Max. peak gate current | GM 4.0A Max. peak gate voltage (forward) Vom 20V Max. peak gate voltage (reverse) VGM 10V Blocking Max. leakage current IDRM 10mA Ty =125C &V DRM Max. reverse leakage IRRM 10mA Wy =125C &V RRM Critical rate of rise of offstate voltage dv/dt 200V /usec. Ty =125C 04-25-07 Rev. 2DOC Figure 1 Typical Forward OnState Characteristics 1 8000 6000 4000 1000 800 600 400 200 100 80 60 40 20 Instantaneous OnState Current Amperes 10 8 1.2 16 2.0 24 #28 32 36 Instantaneous OnState Voltage Volts Figure 2 Forward Current Derating 130 120 110 Na 100 ANS \\S KAUN 90 \ 80 70 Maximum Allowable Case Temperature C go L__a0| ox? |_| 9011 _|1201 180 0 10 20 30 40 50 60 70 80 90 100 Average OnState Current Amperes Junction to Case Peak OnState Current Amperes Figure 3 Maximum Power Dissipation 140 120 / iia N oO RN N 604 My 60 y 20 Y/" Maximum Power Dissipation Watt 0 0 10 20 30 40 50 60 70 80 90 100 Average On-State Current Amperes Figure 4 Transient Thermal Impedance 35 3 4 25 7 2 15 4 J 05 Thermal Impedance C/Watts N\ 0 .001 .01 0.1 1.0 10 100 Time in Seconds Figure 5 Maximum Nonrepetitive Surge Current 1300 1200 1100 N 1000 B 900 800 a 700 600 1 10 100 Number of Cycles 04-25-07 Rev. 2