© Semiconductor Components Industries, LLC, 2001
October, 2016 − Rev. 3 1Publication Order Number:
MMBT4126LT1/D
MMBT4126LT1G
General Purpose Transistor
PNP Silicon
Features
•Moisture Sensitivity Level: 1
•ESD Rating: − Human Body Model: > 4000 V
− Machine Model: > 400 V
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −25 Vdc
Collector−Base Voltage VCBO −25 Vdc
Emitter−Base Voltage VEBO −4 Vdc
Collector Current−Continuous IC−200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) @TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 1) RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) @TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 2) RqJA 417 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Device Package Shipping†
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
C3 M G
G
C3 = Device Code
M = Date Code*
G= Pb−Free Package
12
3
COLLECTOR
3
1
BASE
2
EMITTER
MMBT4126LT1G SOT−23
(Pb−Free) 3000/Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
www.onsemi.com
MMBT4126LT1G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0) V(BR)CEO −25 −Vdc
Collector−Base Breakdown Voltage
(IC = −10 mAdc, IE = 0) V(BR)CBO −25 −Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0) V(BR)EBO −4 −Vdc
Collector Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc) ICEX −−50 nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = −2.0 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
HFE 120
60 300
−
−
Collector−Emitter Saturation Voltage
(IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) −−0.4 Vdc
Base−Emitter Saturation Voltage
(IC = −50 mAdc, IB = −5.0 mAdc) VBE(sat) −−0.95 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) fT250 − MHz
Output Capacitance
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.5 pF
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 10 pF
Small−Signal Current Gain
(IC = −2.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
hfe 120
2.5 480
−
−
Noise Figure
(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) NF − 4.0 dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
TYPICAL TRANSIENT CHARACTERISTICS
Figure 1. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 2. Charge Data
IC, COLLECTOR CURRENT (mA)
5000
1.0
VCC = 40 V
IC/IB = 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
QT
QA
Cibo
Cobo
TJ = 25°C
TJ = 125°C
MMBT4126LT1G
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3
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz)
Figure 3.
f, FREQUENCY (kHz)
2.0
3.0
4.0
5.0
1.0
0.1
Figure 4.
Rg, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20 40
0.2 0.4
0100
4
6
8
10
12
2
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
NF, NOISE FIGURE (dB)
f = 1.0 kHz IC = 1.0 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
Figure 5. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 6. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , DC CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 7. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 8. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5 10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
7
5
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
fe
m
-4
70
30
0.7 7.0
0.7 7.0
7.0
3.0
0.7
0.3
0.7 7.0
0.7 7.0
MMBT4126LT1G
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4
TYPICAL STATIC CHARACTERISTICS
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50 70
0.2 0.3
0.1 100
1.00.7 200
30205.0 7.0
FE
VCE = 1.0 V
TJ = +125°C
+25°C
-55°C
Figure 10. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.0
CE
IC = 1.0 mA
TJ = 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
Figure 11. “ON” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0100
-0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100 200
-1.0
-1.5
-2.0
200
TJ = 25°C VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
qVC FOR VCE(sat)
qVB FOR VBE(sat)
, TEMPERATURE COEFFICIENTS (mV/ C)°
V
q
MMBT4126LT1G
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5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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