MCP16301/H High-Voltage Input Integrated Switch Step-Down Regulator Features General Description * Up to 96% Typical Efficiency * Input Voltage Range: - 4.0V to 30V (MCP16301) - 4.7V to 36V (MCP16301H) * Output Voltage Range: 2.0V to 15V * 2% Output Voltage Accuracy * Qualification: AEC-Q100 Rev G, Grade 1 (-40C to +125C) * Integrated N-Channel Buck Switch: 460 m * Minimum 600 mA Output Current Over All Input Voltage Range (See Figure 2-6 for Maximum Output Current vs. VIN): - up to 1A output current at 3.3V, 5V and 12V VOUT, SOT-23 package at +25C ambient temperature * 500 kHz Fixed Frequency * Adjustable Output Voltage * Low Device Shutdown Current * Peak Current Mode Control * Internal Compensation * Stable with Ceramic Capacitors * Internal Soft-Start * Cycle-by-Cycle Peak Current Limit * Undervoltage Lockout (UVLO): 3.5V * Overtemperature Protection * Available Package: SOT-23-6 The MCP16301/H devices are highly integrated, high-efficiency, fixed-frequency, step-down DC-DC converters in a popular 6-pin SOT-23 package that operates from input voltage sources up to 36V. Integrated features include a high-side switch, fixed-frequency peak current mode control, internal compensation, peak current limit and overtemperature protection. Minimal external components are necessary to develop a complete step-down DC-DC converter power supply. Applications * PIC(R) Microcontroller and dsPIC(R) Digital Signal Controller Bias Supply * 24V Industrial Input DC-DC Conversion * Set-Top Boxes * DSL Cable Modems * Automotive * Wall Cube Regulation * SLA Battery-Powered Devices * AC-DC Digital Control Power Source * Power Meters * D2 Package Linear Regulator Replacement - See Figure 5-2 * Consumer * Medical and Health Care * Distributed Power Supplies 2011-2015 Microchip Technology Inc. High converter efficiency is achieved by integrating the current-limited, low-resistance, high-speed N-Channel MOSFET and associated drive circuitry. High switching frequency minimizes the size of external filtering components, resulting in a small solution size. The MCP16301/H devices can supply 600 mA of continuous current while regulating the output voltage from 2.0V to 15V. An integrated, high-performance peak current mode architecture keeps the output voltage tightly regulated, even during input voltage steps and output current transient conditions that are common in power systems. The EN input is used to turn the device on and off. While turned off, only a few micro amps of current are consumed from the input for power shedding and load distribution applications. Output voltage is set with an external resistor divider. The MCP16301/H devices are offered in a space-saving SOT-23-6 surface mount package. Package Type MCP16301/H 6-Lead SOT-23 BOOST 1 6 SW GND 2 5 VIN 4 EN VFB 3 DS20005004D-page 1 MCP16301/H Typical Applications 1N4148 VIN 4.7V to 36V CBOOST L1 100 nF 15 H Boost VIN CIN 10 F SW COUT 2 x 10 F 40V Schottky Diode EN VOUT 3.3V @ 600 mA 31.6 k VFB GND 10 k 1N4148 VIN 6.0V to 36V CBOOST L1 100 nF 22 H Boost VIN CIN 10 F SW 40V Schottky Diode EN VOUT 5.0V @ 600 mA COUT 2 x 10 F 52.3 k VFB GND 10 k 100 VOUT = 5.0V 90 Efficiency (%) 80 70 VOUT = 3.3V 60 50 VIN = 12V 40 30 20 10 0 10 100 1000 IOUT (mA) DS20005004D-page 2 2011-2015 Microchip Technology Inc. MCP16301/H 1.0 ELECTRICAL CHARACTERISTICS Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings VIN, SW ............................................................... -0.5V to 40V BOOST - GND ................................................... -0.5V to 46V BOOST - SW Voltage........................................ -0.5V to 6.0V VFB Voltage ........................................................ -0.5V to 6.0V EN Voltage ............................................. -0.5V to (VIN + 0.3V) Output Short-Circuit Current ................................. Continuous Power Dissipation ....................................... Internally Limited Storage Temperature ................................... -65C to +150C Ambient Temperature with Power Applied ... -40C to +125C Operating Junction Temperature.................. -40C to +150C ESD Protection On All Pins: HBM ................................................................. 3 kV MM ..................................................................200V DC CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, TA = +25C, VIN = VEN = 12V, VBOOST - VSW = 3.3V, VOUT = 3.3V, IOUT = 100 mA, L = 15 H, COUT = CIN = 2 x 10 F X7R ceramic capacitors. Boldface specifications apply over the TA range of -40oC to +125oC. Parameters Sym. Min. Typ. Max. Units Input Voltage VIN 4 -- 30 V Note 1 (MCP16301) 4.7 -- 36 V Note 1 (MCP16301H) Feedback Voltage VFB 0.784 0.800 0.816 V Output Voltage Adjust Range Feedback Voltage Line Regulation Conditions VOUT 2.0 -- 15.0 V VFB/VFB)/VIN -- 0.01 0.1 %/V IFB -250 10 +250 nA UVLOSTART -- 3.5 4.0 V VIN Rising (MCP16301) -- 3.5 4.7 V VIN Rising (MCP16301H) VIN Falling Feedback Input Bias Current Undervoltage Lockout Start Note 2 VIN = 12V to 30V Undervoltage Lockout Stop UVLOSTOP 2.4 3.0 -- V Undervoltage Lockout Hysteresis UVLOHYS -- 0.5 -- V Switching Frequency fSW 425 500 550 kHz Maximum Duty Cycle DCMAX 90 95 -- % Minimum Duty Cycle DCMIN -- 1 -- % NMOS Switch On Resistance RDS(ON) -- 0.46 -- VBOOST - VSW = 3.3V NMOS Switch Current Limit IN(MAX) -- 1.3 -- A VBOOST - VSW = 3.3V Quiescent Current IQ -- 2 7.5 mA VBOOST = 3.3V; Note 3 Quiescent Current - Shutdown IQ -- 7 10 A VOUT = EN = 0V Maximum Output Current IOUT 600 -- -- mA Note 1 EN Input Logic High VIH 1.4 -- -- V VIL -- -- 0.4 V IENLK -- 0.05 1.0 A EN Input Logic Low EN Input Leakage Current Note 1: 2: 3: IOUT = 200 mA VIN = 5V; VFB = 0.7V; IOUT = 100 mA VEN = 12V The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage necessary for regulation. See characterization graphs for typical input to output operating voltage range and UVLOSTART and UVLOSTOP limits. For VIN < VOUT, VOUT will not remain in regulation. VBOOST supply is derived from VOUT. 2011-2015 Microchip Technology Inc. DS20005004D-page 3 MCP16301/H DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, TA = +25C, VIN = VEN = 12V, VBOOST - VSW = 3.3V, VOUT = 3.3V, IOUT = 100 mA, L = 15 H, COUT = CIN = 2 x 10 F X7R ceramic capacitors. Boldface specifications apply over the TA range of -40oC to +125oC. Parameters Sym. Min. Typ. Max. Units Soft-Start Time tSS -- 300 -- S Thermal Shutdown Die Temperature TSD -- 150 -- C TSDHYS -- 30 -- C Die Temperature Hysteresis Note 1: 2: 3: Conditions EN Low to High, 90% of VOUT The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage necessary for regulation. See characterization graphs for typical input to output operating voltage range and UVLOSTART and UVLOSTOP limits. For VIN < VOUT, VOUT will not remain in regulation. VBOOST supply is derived from VOUT. TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise indicated, TA = +25C, VIN = VEN = 12V, VBOOST - VSW = 3.3V, VOUT = 3.3V Parameters Sym. Min. Typ. Max. Units Operating Junction Temperature Range TJ -40 -- +125 C Storage Temperature Range TA -65 -- +150 C Maximum Junction Temperature TJ -- -- +150 C JA -- 190.5 -- C/W Conditions Temperature Ranges Steady State Transient Package Thermal Resistances Thermal Resistance, 6L-SOT-23 DS20005004D-page 4 EIA/JESD51-3 Standard 2011-2015 Microchip Technology Inc. MCP16301/H 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X 10 F, L = 15 H, VOUT = 3.3V, ILOAD = 200 mA, TA = +25C. 100 90 VIN = 16V VIN = 6V 90 VIN = 12V 70 60 VIN = 30V Efficiency (%) Efficiency (%) 80 VOUT = 2.0V 50 40 VOUT = 12.0V 70 60 50 30 0 100 200 FIGURE 2-1: IOUT. 300 400 IOUT (mA) 500 600 2.0V VOUT Efficiency vs. 0 100 200 300 400 IOUT (mA) 100 VIN = 6V 80 VIN = 12V 70 VIN = 30V 60 VOUT = 3.3V 600 VIN = 16V 90 Efficiency (%) 90 500 12V VOUT Efficiency vs. FIGURE 2-4: IOUT. 100 Efficiency (%) 80 40 30 VIN = 30V VIN = 24V 80 70 VOUT = 15.0V 60 50 50 40 40 30 30 0 100 200 300 400 IOUT (mA) 500 0 600 3.3V VOUT Efficiency vs. FIGURE 2-2: IOUT. 100 200 300 400 IOUT (mA) 500 600 15V VOUT Efficiency vs. FIGURE 2-5: IOUT. 1400 100 VIN = 6V VOUT = 3.3V 1200 90 VIN = 12V 80 1000 VIN = 30V 70 60 IOUT (mA) Efficiency (%) VIN = 30V VIN = 24V VOUT = 5.0V VOUT = 12V 600 50 400 40 200 30 VOUT = 5V 800 0 0 100 FIGURE 2-3: IOUT. 200 300 400 IOUT (mA) 500 600 5.0V VOUT Efficiency vs. 2011-2015 Microchip Technology Inc. 6 12 18 24 30 36 VIN (V) FIGURE 2-6: vs. VIN. Maximum Output Current DS20005004D-page 5 MCP16301/H Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X 10 F, L = 15 H, VOUT = 3.3V, ILOAD = 200 mA, TA = +25C. 1800 Peak Current Limit (mA) 5 IQ (mA) 4 VOUT = 3.3V IOUT = 0 mA 3 VIN = 6V 2 VIN = 12V VIN = 30V 1 1600 VIN = 30V 1400 VIN = 12V 1200 VIN = 6V 1000 800 VOUT = 3.3V 0 600 -40 -25 -10 5 20 35 50 65 80 95 110 125 Ambient Temperature (C) FIGURE 2-7: Temperature. Input Quiescent Current vs. -40 -25 -10 FIGURE 2-10: Peak Current Limit vs. Temperature; VOUT = 3.3V. 510 VIN = 12V VOUT = 3.3V IOUT = 200 mA 500 495 TA = 25C VDS = 100 mV 500 490 RDSON (m:) Switching Frequency (kHz) 505 490 485 480 475 470 480 470 460 450 465 440 460 430 420 455 -40 -20 0 20 40 60 80 100 Ambient Temperature (C) 3 120 FIGURE 2-8: Switching Frequency vs. Temperature; VOUT = 3.3V. 95.4 3.5 4 Boost Voltage (V) 4.5 5 Switch RDSON vs. VBOOST. FIGURE 2-11: 0.802 95.5 VIN = 5V IOUT = 200 mA 95.3 95.2 95.1 95 VIN = 12V VOUT = 3.3V IOUT = 100 mA 0.801 VFB Voltage (V) Maximum Duty Cycle (%) 5 20 35 50 65 80 95 110 125 Ambient Temperature (C) 0.800 0.799 0.798 94.9 0.797 94.8 94.7 0.796 -40 -25 -10 5 20 35 50 65 80 95 110 125 Ambient Temperature (C) FIGURE 2-9: Maximum Duty Cycle vs. Ambient Temperature; VOUT = 5.0V. DS20005004D-page 6 -40 -20 FIGURE 2-12: VOUT = 3.3V. 0 20 40 60 80 100 120 Ambient Temperature (C) VFB vs. Temperature; 2011-2015 Microchip Technology Inc. MCP16301/H Voltage (V) Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X 10 F, L = 15 H, VOUT = 3.3V, ILOAD = 200 mA, TA = +25C. 3.80 3.70 3.60 3.50 3.40 3.30 3.20 3.10 3.00 2.90 2.80 2.70 2.60 2.50 UVLO Start VOUT = 20 mV/DIV AC coupled VSW = 5V/DIV UVLO Stop IL = 20 mA/DIV -40 -25 -10 FIGURE 2-13: Temperature. 5 20 35 50 65 80 95 110 125 Ambient Temperature (C) Undervoltage Lockout vs. 1 s/DIV FIGURE 2-16: Waveforms. Heavy Load Switching 5.00 VIN = 12V VOUT = 3.3V IOUT = 100 mA 0.65 0.60 0.55 0.50 0.45 0.40 Minimum Input Voltage (V) 0.70 Enable Threshold Voltage (V) VOUT = 3.3V IOUT = 600 mA VIN = 12V 4.70 To Start 4.40 4.10 3.80 To Run 3.50 3.20 -40 -25 -10 FIGURE 2-14: Temperature. VOUT 20 mV/DIV AC coupled 5 20 35 50 65 80 95 110 125 Ambient Temperature (C) EN Threshold Voltage vs. 1 10 100 1000 IOUT (mA) FIGURE 2-17: Typical Minimum Input Voltage vs. Output Current. VOUT = 3.3V IOUT = 100 mA VIN = 12V VOUT = 3.3V IOUT = 50 mA VIN = 12V VOUT 2V/DIV VSW 5V/DIV VEN 2V/DIV IL 100 mA/DIV 1 s/DIV FIGURE 2-15: Waveforms. Light Load Switching 2011-2015 Microchip Technology Inc. 100 s/DIV s/ FIGURE 2-18: Start-Up From Enable. DS20005004D-page 7 MCP16301/H Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X 10 F, L = 15 H, VOUT = 3.3V, ILOAD = 200 mA, TA = +25C. VOUT = 3.3V IOUT = 100 mA VIN = 12V VOUT 1V/DIV VIN 5V/DIV 100 s/DIV FIGURE 2-19: Start-Up from VIN. VOUT = 3.3V IOUT = 100 mA to 600 mA VOUT AC coupled 100 mV/DIV IOUT 200 mA/DIV 100 s/DIV FIGURE 2-20: Load Transient Response. VOUT = 3.3V IOUT = 100 mA VIN = 8V to 12V Step VOUT AC coupled 100 mV/DIV VIN 2V/DIV 10 s/DIV FIGURE 2-21: DS20005004D-page 8 Line Transient Response. 2011-2015 Microchip Technology Inc. MCP16301/H 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE MCP16301/H SOT-23 Symbol Description 1 BOOST 2 GND Boost voltage that drives the internal NMOS control switch. A bootstrap capacitor is connected between the BOOST and SW pins. Ground pin. 3 VFB Output voltage feedback pin. Connect VFB to an external resistor divider to set the output voltage. 4 EN Enable pin. Logic high enables the operation. Do not allow this pin to float. 5 VIN Input supply voltage pin for power and internal biasing. 6 SW Output switch node. This pin connects to the inductor, the freewheeling diode and the bootstrap capacitor. 3.1 Boost Pin (BOOST) The high side of the floating supply used to turn the integrated N-Channel MOSFET on and off is connected to the boost pin. 3.2 Ground Pin (GND) The ground or return pin is used for circuit ground connection. The length of the trace from the input cap return, output cap return and GND pin should be made as short as possible to minimize the noise on the GND pin. 3.3 Feedback Voltage Pin (VFB) The VFB pin is used to provide output voltage regulation by using a resistor divider. The VFB voltage will be 0.800V typical with the output voltage in regulation. 3.4 Enable Pin (EN) The EN pin is a logic-level input used to enable or disable device switching and to lower the quiescent current while disabled. A logic high (> 1.4V) will enable the regulator output. A logic low (< 0.4V) will ensure that the regulator is disabled. 2011-2015 Microchip Technology Inc. 3.5 Power Supply Input Voltage Pin (VIN) Connect the input voltage source to VIN. The input source should be decoupled to GND with a 4.7 F-20 F capacitor, depending on the impedance of the source and output current. The input capacitor provides AC current for the power switch and a stable voltage source for the internal device power. This capacitor should be connected as close as possible to the VIN and GND pins. For lighter load applications, a 1 F X7R (or X5R, for limited temperature range, -40 to +85C) ceramic capacitor can be used. 3.6 Switch Pin (SW) The Switch Node pin is connected internally to the N-Channel switch and externally to the SW node consisting of the inductor and Schottky diode. The SW node can rise very fast as a result of the internal switch turning on. The external Schottky diode should be connected close to the SW node and GND. DS20005004D-page 9 MCP16301/H NOTES: DS20005004D-page 10 2011-2015 Microchip Technology Inc. MCP16301/H 4.0 DETAILED DESCRIPTION 4.1 Device Overview The MCP16301/H devices are high-input voltage step-down regulators, capable of supplying 600 mA to a regulated output voltage from 2.0V to 15V. Internally, the trimmed 500 kHz oscillator provides a fixed frequency, while the peak current mode control architecture varies the duty cycle for output voltage regulation. An internal floating driver is used to turn the high-side integrated N-Channel MOSFET on and off. The power for this driver is derived from an external boost capacitor whose energy is supplied from a fixed voltage ranging from 3.0V to 5.5V, typically the input or output voltage of the converter. For applications with an output voltage outside of this range, such as 12V, the boost capacitor bias can be derived from the output using a simple Zener diode regulator. 4.1.1 INTERNAL REFERENCE VOLTAGE (VREF) An integrated precise 0.8V reference combined with an external resistor divider sets the desired converter output voltage. The resistor divider range can vary without affecting the control system gain. High-value resistors consume less current, but are more susceptible to noise. 4.1.2 4.1.4 ENABLE INPUT Enable input, (EN), is used to enable and disable the device. If disabled, the MCP16301/H devices consume a minimal current from the input. Once enabled, the internal soft start controls the output voltage rate of rise, preventing high-inrush current and output voltage overshoot. 4.1.5 SOFT START The internal reference voltage rate of rise is controlled during start-up, minimizing the output voltage overshoot and the inrush current. 4.1.6 UNDERVOLTAGE LOCKOUT An integrated Undervoltage Lockout (UVLO) prevents the converter from starting until the input voltage is high enough for normal operation. The converter will typically start at 3.5V and operate down to 3.0V. Hysteresis is added to prevent starting and stopping during start-up, as a result of loading the input voltage source. 4.1.7 OVERTEMPERATURE PROTECTION Overtemperature protection limits the silicon die temperature to +150C by turning the converter off. The normal switching resumes at +120C. INTERNAL COMPENSATION All control system components necessary for stable operation over the entire device operating range are integrated, including the error amplifier and inductor current slope compensation. To add the proper amount of slope compensation, the inductor value changes along with the output voltage (see Table 5-1). 4.1.3 EXTERNAL COMPONENTS External components consist of: * * * * * * input capacitor output filter (inductor and capacitor) freewheeling diode boost capacitor boost blocking diode resistor divider. The selection of the external inductor, output capacitor, input capacitor and freewheeling diode is dependent upon the output voltage and the maximum output current. 2011-2015 Microchip Technology Inc. DS20005004D-page 11 MCP16301/H VIN BG REF CIN VOUT VREG Boost Precharge SS OTEMP VREF RTOP + Amp - FB RBOT RCOMP EN VOUT S - + - HS Drive SW Schottky Diode PWM Latch Comp + Boost Diode CBOOST 500 kHz OSC C OUT R Precharge Overtemp CS + + CCOMP VREF BOOST SHDN all blocks GND RSENSE Slope Comp GND FIGURE 4-1: 4.2 4.2.1 MCP16301/H Block Diagram. Functional Description STEP-DOWN OR BUCK CONVERTER The MCP16301/H devices are non-synchronous step-down or buck converters, capable of stepping input voltages ranging from 4V to 30V (MCP16301) or 36V (MCP16301H) down to 2.0V to 15V for VIN > VOUT. The integrated high-side switch is used to chop or modulate the input voltage using a controlled duty cycle for output voltage regulation. High efficiency is achieved by using a low-resistance switch, low forward drop diode, low equivalent series resistance (ESR), an inductor and a capacitor. When the switch is turned on, a DC voltage is applied to the inductor (VIN - VOUT), resulting in a positive linear ramp of inductor current. When the switch turns off, the applied inductor voltage is equal to -VOUT, resulting in a negative linear ramp of inductor current (ignoring the forward drop of the Schottky diode). For steady-state, continuous inductor current operation, the positive inductor current ramp must equal the negative current ramp in magnitude. While operating in steady state, the switch duty cycle must be equal to the relationship of VOUT/VIN for constant output voltage regulation, under the condition that the inductor current is continuous or never reaches zero. For discontinuous inductor current operation, the steady-state duty cycle will be less than VOUT/VIN to maintain voltage regulation. The average of the DS20005004D-page 12 chopped input voltage or SW node voltage is equal to the output voltage, while the average of the inductor current is equal to the output current. IL VOUT SW VIN + - Schottky Diode L COUT IL IOUT 0 VIN SW VOUT on on on off off Continuous Inductor Current Mode IL 0 IOUT VIN SW on on off off on Discontinuous Inductor Current Mode FIGURE 4-2: Step-Down Converter. 2011-2015 Microchip Technology Inc. MCP16301/H 4.2.2 PEAK CURRENT MODE CONTROL The MCP16301/H devices integrate a Peak Current Mode Control architecture, resulting in superior AC regulation while minimizing the number of voltage loop compensation components, and their size, for integration. Peak Current Mode Control takes a small portion of the inductor current, replicates it, and compares this replicated current sense signal to the output of the integrated error voltage. In practice, the inductor current and the internal switch current are equal during the switch-on time. By adding this peak current sense to the system control, the step-down power train system is reduced from a 2nd order to a 1st order. This reduces the system complexity and increases its dynamic performance. For Pulse-Width Modulation (PWM) duty cycles that exceed 50%, the control system can become bimodal where a wide pulse followed by a short pulse repeats instead of the desired fixed pulse width. To prevent this mode of operation, an internal compensating ramp is summed into the current shown in Figure 4-1. 4.2.3 PULSE-WIDTH MODULATION (PWM) The internal oscillator periodically starts the switching period, which, for MCP16301, occurs every 2 s or 500 kHz. With the integrated switch turned on, the inductor current ramps up until the sum of the current sense and slope compensation ramp exceeds the integrated error amplifier output. The error amplifier output slews up or down to increase or decrease the inductor peak current feeding into the output LC filter. If the regulated output voltage is lower than its target, the inverting error amplifier output rises. This results in an increase in the inductor current to correct the errors in the output voltage. The fixed-frequency duty cycle is terminated when the sensed inductor peak current, summed with the internal slope compensation, exceeds the output voltage of the error amplifier. The PWM latch is reset by turning off the internal switch and preventing it from turning on until the beginning of the next cycle. An overtemperature signal, or boost cap undervoltage, can also reset the PWM latch to asynchronously terminate the cycle. 4.2.4 HIGH-SIDE DRIVE The MCP16301/H devices feature an integrated high-side N-Channel MOSFET for high-efficiency step-down power conversion. An N-Channel MOSFET is used for its low resistance and size (instead of a P-Channel MOSFET). The N-Channel MOSFET gate must be driven above its source to fully turn on the transistor. A gate-drive voltage above the input is necessary to turn on the high-side N-Channel. The high-side drive voltage should be between 3.0V and 5.5V. The N-Channel source is connected to the inductor and Schottky diode, or switch node. When the switch is off, the inductor current flows through the Schottky diode, providing a path to recharge the boost cap from the boost voltage source: typically the output voltage for 3.0V to 5.0V output applications. A boost-blocking diode is used to prevent current flow from the boost cap back into the output during the internal switch-on time. Prior to start-up, the boost cap has no stored charge to drive the switch. An internal regulator is used to precharge the boost cap. Once precharged, the switch is turned on and the inductor current flows. When the switch turns off, the inductor current free-wheels through the Schottky diode, providing a path to recharge the boost cap. Worst-case conditions for recharge occur when the switch turns on for a very short duty cycle at light load, limiting the inductor current ramp. In this case, there is a small amount of time for the boost capacitor to recharge. For high input voltages there is enough precharge current to replace the boost cap charge. For input voltages above 5.5V typical, the MCP16301/H devices will regulate the output voltage with no load. After starting, the MCP16301/H devices will regulate the output voltage until the input voltage decreases below 4V. See Figure 2-17 for device range of operation over input voltage, output voltage and load. 4.2.5 ALTERNATIVE BOOST BIAS For 3.0V to 5.0V output voltage applications, the boost supply is typically the output voltage. For applications with 3.0V < VOUT < 5.0V, an alternative boost supply can be used. Alternative boost supplies can be from the input, input derived, output derived or an auxiliary system voltage. For low voltage output applications with unregulated input voltage, a shunt regulator derived from the input can be used to derive the boost supply. For applications with high output voltage or regulated high input voltage, a series regulator can be used to derive the boost supply. 2011-2015 Microchip Technology Inc. DS20005004D-page 13 MCP16301/H Boost Diode C1 VZ = 5.1V BOOST RSH CB EN VIN L MCP16301/H VOUT SW 2V VIN 12V COUT FW Diode CIN RTOP FB GND RBOT 3.0V to 5.5V External Supply Boost Diode BOOST CB EN L 2V VIN 12V VOUT MCP16301/H SW VIN COUT FW Diode CIN GND RTOP FB RBOT FIGURE 4-3: Shunt and External Boost Supply. Shunt Boost Supply Regulation is used for low-output voltage converters operating from a wide ranging input source. A regulated 3.0V to 5.5V supply is needed to provide high-side drive bias. The shunt uses a Zener diode to clamp the voltage within the 3.0V to 5.5V range using the resistance shown in Figure 4-3. To calculate the shunt resistance, the boost drive current can be estimated using Equation 4-1. DS20005004D-page 14 IBOOST_TYP for 3.3V Boost Supply = 0.6 mA IBOOST_TYP for 5.0V Boost Supply = 0.8 mA EQUATION 4-1: BOOST CURRENT I BOOST = I BOOST_TYP 1.5 mA 2011-2015 Microchip Technology Inc. MCP16301/H To calculate the shunt resistance, the maximum IBOOST and IZ currents are used at the minimum input voltage (Equation 4-2). EQUATION 4-2: SHUNT RESISTANCE V INMIN - V Z R SH = -----------------------------I Boost + I Z VZ and IZ can be found on the Zener diode manufacturer's data sheet (typical IZ = 1 mA). Boost Diode VZ = 7.5V BOOST CB EN L VIN 12V VIN 15V to 36V VOUT MCP16301/H SW COUT FW Diode CIN RTOP FB GND RBOT Boost Diode BOOST VZ = 7.5V CB EN L 2V VIN 12V VOUT MCP16301/H SW VIN COUT FW Diode CIN GND RTOP FB RBOT FIGURE 4-4: Series Regulator Boost Supply. Series regulator applications use a Zener diode to drop the excess voltage. The series regulator bias source can be input or output voltage derived, as shown in Figure 4-4. For proper circuit operation, the boost supply must remain between 3.0V and 5.5V at all times. 2011-2015 Microchip Technology Inc. DS20005004D-page 15 MCP16301/H NOTES: DS20005004D-page 16 2011-2015 Microchip Technology Inc. MCP16301/H 5.0 APPLICATION INFORMATION 5.1 Typical Applications The MCP16301/H step-down converters operate over a wide input voltage range, up to 36V maximum. Typical applications include generating a bias or VDD voltage for the PIC(R) microcontroller product line, digital control system bias supply for AC-DC converters, 24V industrial input and similar applications. 5.2 Adjustable Output Voltage Calculations To calculate the resistor divider values for the MCP16301/H devices, Equation 5-1 can be used. RTOP is connected to VOUT, RBOT is connected to GND and both are connected to the VFB input pin. EQUATION 5-1: R TOP V OUT = R BOT ------------- - 1 V FB EXAMPLE 5-1: VOUT = 3.3V VFB = 0.8V RBOT = 10 k RTOP = 31.25 k (standard value = 31.6 k) VOUT = 3.328V (using standard value) EXAMPLE 5-2: VOUT = 5.0V VFB = 0.8V RBOT = 10 k RTOP = 52.5 k (standard value = 52.3 k) VOUT = 4.98V (using standard value) The transconductance error amplifier gain is controlled by its internal impedance. The external divider resistors have no effect on system gain, so a wide range of values can be used. A 10 k resistor is recommended as a good trade-off for quiescent current and noise immunity. 2011-2015 Microchip Technology Inc. 5.3 General Design Equations The step-down converter duty cycle can be estimated using Equation 5-2 while operating in Continuous Inductor Current mode. This equation also counts the forward drop of the freewheeling diode and internal N-Channel MOSFET switch voltage drop. As the load current increases, the switch voltage drop and diode voltage drop increase, requiring a larger PWM duty cycle to maintain the output voltage regulation. Switch voltage drop is estimated by multiplying the switch current times the switch resistance or RDSON. EQUATION 5-2: CONTINUOUS INDUCTOR CURRENT DUTY CYCLE V OUT + V Diode D = ------------------------------------------------------ V IN - I SW R DSON The MCP16301/H devices feature an integrated slope compensation to prevent the bimodal operation of the PWM duty cycle. Internally, half of the inductor current down slope is summed with the internal current sense signal. For the proper amount of slope compensation, it is recommended to keep the inductor down-slope current constant by varying the inductance with VOUT, where K = 0.22V/H. EQUATION 5-3: K = V OUT L For VOUT = 3.3V, recommended. TABLE 5-1: an inductance of 15 H is RECOMMENDED INDUCTOR VALUES VOUT K LSTANDARD 2.0V 0.20 10 H 3.3V 0.22 15 H 5.0V 0.23 22 H 12V 0.21 56 H 15V 0.22 68 H DS20005004D-page 17 MCP16301/H 5.4 Input Capacitor Selection 5.6 The step-down converter input capacitor must filter the high input ripple current as a result of pulsing or chopping the input voltage. The input voltage pin of the MCP16301/H devices is used to supply voltage for the power train and as a source for internal bias. A low equivalent series resistance (ESR), preferably a ceramic capacitor, is recommended. The necessary capacitance is dependent upon the maximum load current and source impedance. Three capacitor parameters to keep in mind are the voltage rating, equivalent series resistance and the temperature rating. For wide temperature range applications, a multi-layer X7R dielectric is mandatory, while for applications with limited temperature range, a multi-layer X5R dielectric is acceptable. Typically, input capacitance between 4.7 F and 10 F is sufficient for most applications. For applications with 100 mA to 200 mA load, a 1 F X7R capacitor can be used, depending on the input source and its impedance. The input capacitor voltage rating should be a minimum of VIN plus margin. Table 5-2 contains the recommended range for the input capacitor value. 5.5 Output Capacitor Selection The output capacitor helps in providing a stable output voltage during sudden load transients, and reduces the output voltage ripple. As with the input capacitor, X5R and X7R ceramic capacitors are well suited for this application. The MCP16301/H devices are internally compensated, so the output capacitance range is limited. See Table 5-2 for the recommended output capacitor range. The amount and type of output capacitance and equivalent series resistance will have a significant effect on the output ripple voltage and system stability. The range of the output capacitance is limited due to the integrated compensation of the MCP16301/H devices. Inductor Selection The MCP16301/H devices are designed to be used with small surface mount inductors. Several specifications should be considered prior to selecting an inductor. To optimize system performance, the inductance value is determined by the output voltage (Table 5-1) so the inductor ripple current is somewhat constant over the output voltage range. EQUATION 5-4: INDUCTOR RIPPLE CURRENT V L IL = -----L- t ON EXAMPLE 5-3: VIN = 12V VOUT = 3.3V IOUT = 600 mA EQUATION 5-5: INDUCTOR PEAK CURRENT IL I LPK = -------- + I OUT 2 Inductor ripple current = 319 mA Inductor peak current = 760 mA An inductor saturation rating minimum of 760 mA is recommended. Low ESR inductors result in higher system efficiency. A trade-off between size, cost and efficiency is made to achieve the desired results. The output voltage capacitor voltage rating should be a minimum of VOUT, plus margin. Table 5-2 contains the recommended range for the input and output capacitor value: TABLE 5-2: CAPACITOR VALUE RANGE Parameter Min CIN 2.2 F none COUT 20 F none DS20005004D-page 18 Max 2011-2015 Microchip Technology Inc. MCP16301/H Size WxLxH (mm) ME3220 15 0.52 0.90 3.2x2.5x2.0 LPS4414 15 0.440 0.92 4.3x4.3x1.4 LPS6235 15 0.125 2.00 6.0x6.0x3.5 MSS6132 15 0.135 1.56 6.1x6.1x3.2 Part Number Value (H) ISAT (A) MCP16301/H RECOMMENDED 3.3V INDUCTORS DCR () TABLE 5-3: Coilcraft(R) MSS7341 15 0.057 1.78 7.3x7.3x4.1 ME3220 15 0.520 0.8 2.8x3.2x2.0 LPS3015 15 0.700 0.61 3.0x3.0x1.4 Wurth Elektronik Group(R) 744025 15 0.400 0.900 2.8x2.8x2.8 744031 15 0.255 0.450 3.8x3.8x1.65 744042 15 0.175 0.75 5.7 Freewheeling Diode The freewheeling diode creates a path for inductor current flow after the internal switch is turned off. The average diode current is dependent upon output load current at duty cycle (D). The efficiency of the converter is a function of the forward drop and speed of the freewheeling diode. A low forward drop Schottky diode is recommended. The current rating and voltage rating of the diode is application dependent. The diode voltage rating should be a minimum of VIN, plus margin. For example, a diode rating of 40V should be used for an application with a maximum input of 30V. The average diode current can be calculated using Equation 5-6. EQUATION 5-6: DIODE AVERAGE CURRENT I D1AVG = 1 - D I OUT 4.8x4.8x1.8 EXAMPLE 5-4: Coiltronics(R) SD12 15 0.48 SD18 15 0.266 0.831 5.2x5.2x1.8 0.692 5.2x5.2x1.2 SD20 15 0.193 0.718 5.2x5.2x2.0 SD3118 15 0.51 0.75 3.2x3.2x1.8 SD52 15 0.189 0.88 5.2x5.5.2.0 Sumida(R) Corporation IOUT = 0.5A VIN = 15V VOUT = 5V D = 5/15 ID1AVG = 333 mA CDPH4D19F 15 0.075 0.66 5.2x5.2x2.0 A 0.5A to 1A diode is recommended. CDRH3D161H 15 0.328 0.65 4.0x4.0x1.8 TABLE 5-4: VLF30251 15 0.5 0.47 2.5x3.0x1.2 VLF4012A 15 0.46 0.63 3.5x3.7x1.2 VLF5014A 15 0.28 0.97 4.5x4.7x1.4 B82462G4332M 15 0.097 1.05 6x6x2.2 (R) TDK-EPC App FREEWHEELING DIODES Manufacturer Part Number Rating 12 VIN 600 mA DFLS120L-7 Diodes Incorporated(R) 24 VIN 100 mA Diodes Incorporated B0540Ws-7 40V, 0.5A 18 VIN 600 mA Diodes Incorporated B130L-13-F 30V, 1A 5.8 20V, 1A Boost Diode The boost diode is used to provide a charging path from the low-voltage gate drive source, while the switch node is low. The boost diode blocks the high voltage of the switch node from feeding back into the output voltage when the switch is turned on, forcing the switch node high. A standard 1N4148 ultra-fast diode is recommended for its recovery speed, high voltage blocking capability, availability and cost. The voltage rating required for the boost diode is VIN. For low boost voltage applications, a small Schottky diode with the appropriately rated voltage can be used to lower the forward drop, increasing the boost supply for gate drive. 2011-2015 Microchip Technology Inc. DS20005004D-page 19 MCP16301/H 5.9 Boost Capacitor The boost capacitor is used to supply current for the internal high-side drive circuitry that is above the input voltage. The boost capacitor must store enough energy to completely drive the high-side switch on and off. A 0.1 F X5R or X7R capacitor is recommended for all applications. The boost capacitor maximum voltage is 5.5V, so a 6.3V or 10V rated capacitor is recommended. In case of a noise-sensitive application, an additional resistor in series with the boost capacitor, that will reduce the high-frequency noise associated with switching power supplies, can be added. A typical value for the resistor is 82. 5.10 EXAMPLE 5-5: VIN = 10V VOUT = 5V IOUT = 0.4A Efficiency = 90% Total System Dissipation = 222 mW LESR = 0.15 PL = 24 mW Diode VF = 0.50 D = 50% PDiode = 125 mW Thermal Calculations The MCP16301/H devices are available in a SOT-23-6 package. By calculating the power dissipation and applying the package thermal resistance (JA), the junction temperature is estimated. The maximum continuous junction temperature rating for the MCP16301/H devices is +125C. To quickly estimate the internal power dissipation for the switching step-down regulator, an empirical calculation using measured efficiency can be used. Given the measured efficiency, the internal power dissipation is estimated by Equation 5-7. This power dissipation includes all internal and external component losses. For a quick internal estimate, subtract the estimated Schottky diode loss and inductor ESR loss from the PDIS calculation in Equation 5-7. EQUATION 5-7: TOTAL POWER DISSIPATION ESTIMATE OUT I OUT V ----------------------------- Efficiency- - V OUT I OUT = PDis The difference between the first term, input power, and the second term, power delivered, is the total system power dissipation. The freewheeling Schottky diode losses are determined by calculating the average diode current and multiplying by the diode forward drop. The inductor losses are estimated by PL = IOUT2 x LESR. EQUATION 5-8: DIODE POWER DISSIPATION ESTIMATE P Diode = V F 1 - D I OUT DS20005004D-page 20 MCP16301/H internal power dissipation estimate: PDIS - PL - PDIODE = 73 mW JA = 198C/W Estimated Junction Temperature Rise = +14.5C 5.11 PCB Layout Information Good printed circuit board layout techniques are important to any switching circuitry, and switching power supplies are no different. When wiring the switching high-current paths, short and wide traces should be used. Therefore, it is important that the input and output capacitors be placed as close as possible to the MCP16301/H devices to minimize the loop area. The feedback resistors and feedback signal should be routed away from the switching node and the switching current loop. When possible, ground planes and traces should be used to help shield the feedback signal and minimize noise and magnetic interference. A good MCP16301/H layout starts with CIN placement. CIN supplies current to the input of the circuit when the switch is turned on. In addition to supplying high-frequency switch current, CIN also provides a stable voltage source for the internal MCP16301/H circuitry. Unstable PWM operation can result if there are excessive transients or ringing on the VIN pin of the MCP16301/H devices. In Figure 5-1, CIN is placed close to pin 5. A ground plane on the bottom of the board provides a low resistive and inductive path for the return current. The next priority in placement is the freewheeling current loop formed by D1, COUT and L, while strategically placing COUT return close to CIN return. Next, CB and DB should be placed between the boost pin and the switch node pin SW. This leaves space close to the VFB pin of the MCP16301/H devices to place RTOP and RBOT. RTOP and RBOT are routed away from the Switch node so noise is not coupled into the high-impedance VFB input. 2011-2015 Microchip Technology Inc. MCP16301/H Bottom Plane is GND MCP16301/H Bottom Trace RBOT RTOP 10 Ohm EN C 1 B DB REN VIN VOUT D1 L 2 x CIN GND COUT COUT 4 BOOST EN GND DB 1 CB REN VIN 5 4V to 30V CIN MCP16301/H Value CIN 10 F COUT 2 x 10 F L 15 H RTOP 31.6 k RBOT 10 k D1 B140 DB 1N4148 CB 100 nF FIGURE 5-1: 6 VIN COUT 10 Ohm D1 GND 2 Component SW VOUT 3.3V L FB 3 RTOP RBOT *Note: The 10 resistor is used with network analyzer, to measure system gain and phase. MCP16301/H SOT-23-6 Recommended Layout, 600 mA Design. 2011-2015 Microchip Technology Inc. DS20005004D-page 21 MCP16301/H Bottom Plane is GND MCP16301/H RBOT RTOP DB VIN VOUT CB REN L CIN GND GND D1 4 COUT GND BOOST EN DB 1 CB REN VIN 4V to 30V CIN 5 VIN MCP16301/H Value CIN 1 F COUT 10 F L 15 H RTOP 31.6 k RBOT 10 k D1 PD3S130 CB 100 nF REN 1 M FIGURE 5-2: DS20005004D-page 22 6 COUT D1 GND Component SW VOUT 3.3V L FB RTOP 3 2 RBOT MCP16301/H SOT-23-6 D2 Recommended Layout, 200 mA Design. 2011-2015 Microchip Technology Inc. MCP16301/H 6.0 TYPICAL APPLICATION CIRCUITS Boost Diode BOOST CB EN L MCP16301/H VIN 3.3V VIN 6V to 30V VOUT SW COUT FW Diode CIN GND RTOP FB RBOT Component Value Manufacturer Yuden(R) Part Number Comment CIN 2 x 4.7 F Taiyo Co., Ltd. UMK325B7475KM-T Cap. 4.7 F 50V Ceramic X7R 1210 10% COUT 2 x 10 F Taiyo Yuden Co., Ltd. JMK212B7106KG-T Cap. 10 F 6.3V Ceramic X7R 0805 10% 15 H Coilcraft(R) L MSS6132-153ML MSS6132 15 H Shielded Power Inductor RTOP 31.6 k Panasonic(R)-ECG ERJ-3EKF3162V Res. 31.6 k 1/10W 1% 0603 SMD RBOT 10 k Panasonic-ECG ERJ-3EKF1002V Res. 10.0 k 1/10W 1% 0603 SMD FW Diode B140 Diodes Incorporated(R) B140-13-F Boost Diode 1N4148 Diodes Incorporated 1N4448WS-7-F CB 100 nF AVX(R) Corporation 0603YC104KAT2A FIGURE 6-1: Diode Schottky 40V 1A SMA Diode Switch 75V 200 mW SOD-323 Cap. 0.1 F 16V Ceramic X7R 0603 10% Typical Application 30V VIN to 3.3V VOUT. 2011-2015 Microchip Technology Inc. DS20005004D-page 23 MCP16301/H Boost Diode BOOST CB EN 15V to 30V VIN DZ L MCP16301/H VOUT 12V SW VIN COUT FW Diode CIN GND RTOP FB RBOT Component Value Manufacturer Yuden(R) Part Number Comment CIN 2 x 4.7 F Taiyo Co., Ltd. UMK325B7475KM-T Cap. 4.7 uF 50V Ceramic X7R 1210 10% COUT 2 x 10 F Taiyo Yuden Co., Ltd. JMK212B7106KG-T Cap. Ceramic 10 F 25V X7R 10% 1206 L 56 H Coilcraft(R) MSS6132-153ML MSS7341 56 H Shielded Power Inductor RTOP 140 k Panasonic(R)-ECG ERJ-3EKF3162V Res. 140 k 1/10W 1% 0603 SMD RBOT 10 k Panasonic-ECG ERJ-3EKF1002V Res. 10.0 k 1/10W 1% 0603 SMD FW Diode B140 Diodes Incorporated(R) B140-13-F Boost Diode 1N4148 Diodes Incorporated 1N4448WS-7-F CB 100 nF AVX(R) Corporation 0603YC104KAT2A Cap. 0.1 F 16V Ceramic X7R 0603 10% DZ 7.5V Zener Diodes Incorporated MMSZ5236BS-7-F Diode Zener 7.5V 200 mW SOD-323 FIGURE 6-2: DS20005004D-page 24 Diode Schottky 40V 1A SMA Diode Switch 75V 200 mW SOD-323 Typical Application 15V - 30V Input; 12V Output. 2011-2015 Microchip Technology Inc. MCP16301/H DZ Boost Diode BOOST CB EN L VIN VOUT MCP16301/H SW 12V 2V VIN COUT FW Diode CIN GND RTOP FB RBOT Component Value Manufacturer CIN 10 F Yuden(R) Taiyo Co., Ltd. COUT 22 F Taiyo Yuden Co., Ltd. JMK316B7226ML-T L 10 H Coilcraft(R) MSS4020-103ML RTOP 15 k Panasonic(R)-ECG ERJ-3EKF1502V Res. 15.0 k 1/10W 1% 0603 SMD RBOT 10 k Panasonic-ECG ERJ-3EKF1002V Res. 10.0 k 1/10W 1% 0603 SMD FW Diode PD3S Diodes Incorporated(R) PD3S120L-7 Boost Diode 1N4148 Diodes Incorporated 1N4448WS-7-F CB 100 nF AVX(R) Corporation 0603YC104KAT2A Cap. 0.1 F 16V Ceramic X7R 0603 10% DZ 7.5V Zener Diodes Incorporated MMSZ5236BS-7-F Diode Zener 7.5V 200 mW SOD-323 FIGURE 6-3: Part Number Comment EMK316B7106KL-TD Cap. Ceramic 10 F 16V X7R 10% 1206 Cap. Ceramic 22 F 6.3V X7R 1206 10 H Shielded Power Inductor Diode Schottky 1A 20V POWERDI323 Diode Switch 75V 200 mW SOD-323 Typical Application 12V Input; 2V Output at 600 mA. 2011-2015 Microchip Technology Inc. DS20005004D-page 25 MCP16301/H Boost Diode DZ CZ BOOST RZ CB EN VIN L 2.5V VIN 10V to 16V VOUT MCP16301/H SW COUT FW Diode CIN GND RTOP FB RBOT Component Value Manufacturer CIN 10 F Yuden(R) Taiyo Co., Ltd. COUT 22 F Taiyo Yuden Co., Ltd. JMK316B7226ML-T L 12 H Coilcraft(R) LPS4414-123MLB LPS4414 12 H Shielded Power Inductor 21.5 k Panasonic(R)-ECG ERJ-3EKF2152V Res. 21.5 k 1/10W 1% 0603 SMD Res. 10.0 k 1/10W 1% 0603 SMD RTOP Part Number Comment TMK316B7106KL-TD Cap. Ceramic 10 F 25V X7R 10% 1206 Cap. Ceramic 22 F 6.3V X7R 1206 10 k Panasonic-ECG ERJ-3EKF1002V DFLS120 Diodes Incorporated(R) DFLS120L-7 Boost Diode 1N4148 Diodes Incorporated 1N4448WS-7-F CB 100 nF AVX(R) Corporation 0603YC104KAT2A Cap. 0.1 F 16V Ceramic X7R 0603 10% DZ 7.5V Zener Diodes Incorporated MMSZ5236BS-7-F Diode Zener 7.5V 200 mW SOD-323 CZ 1 F Taiyo Yuden Co., Ltd. LMK107B7105KA-T Cap. Ceramic 1.0 F 10V X7R 0603 RZ 1 k Panasonic-ECG ERJ-8ENF1001V RBOT FW Diode FIGURE 6-4: DS20005004D-page 26 Diode Schottky 20V 1A POWERDI123 Diode Switch 75V 200 mW SOD-323 Res. 1.00 k 1/4W 1% 1206 SMD Typical Application 10V to 16V VIN to 2.5V VOUT. 2011-2015 Microchip Technology Inc. MCP16301/H Boost Diode EN BOOST CB REN L MCP16301/H VIN 4V to 30V VOUT 3.3V SW VIN COUT FW Diode CIN GND RTOP FB RBOT Component Value Manufacturer CIN 1 F Yuden(R) Taiyo Co., Ltd. GMK212B7105KG-T Cap. Ceramic 1.0 F 35V X7R 0805 COUT 10 F Taiyo Yuden Co., Ltd. JMK107BJ106MA-T L 15 H Coilcraft(R) LPS3015-153MLB Inductor Power 15 H 0.61A SMD 31.6 k Panasonic(R)-ECG ERJ-2RKF3162X Res. 31.6 k 1/10W 1% 0402 SMD RBOT 10 k Panasonic-ECG ERJ-3EKF1002V Res. 10.0 k 1/10W 1% 0603 SMD FW Diode B0540 Diodes Incorporated(R) B0540WS-7 Diode Schottky 0.5A 40V SOD323 Boost Diode 1N4148 Diodes Incorporated 1N4448WS-7-F Diode Switch 75V 200 mW SOD-323 CB 100 nF TDK(R) Corporation C1005X5R0J104M Cap. Ceramic 0.10 F 6.3V X5R 0402 REN 10 M Panasonic-ECG ERJ-2RKF1004X RTOP FIGURE 6-5: Part Number Comment Cap. Ceramic 10 F 6.3V X5R 0603 Res. 1.00 M 1/10W 1% 0402 SMD Typical Application 4V to 30V VIN to 3.3V VOUT at 150 mA. 2011-2015 Microchip Technology Inc. DS20005004D-page 27 MCP16301/H NOTES: DS20005004D-page 28 2011-2015 Microchip Technology Inc. MCP16301/H 7.0 PACKAGING INFORMATION 7.1 Package Marking Information 6-Lead SOT-23 Legend: XX...X Y YY WW NNN e3 * Note: Example Part Number Code MCP16301T-I/CHY HTNN MCP16301T-E/CH JYNN MCP16301HT-E/CH AAANY MCP16301HT-I/CH AAAPY HT25 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC(R) designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2011-2015 Microchip Technology Inc. DS20005004D-page 29 MCP16301/H /$ !$% $ 0 $$ ,33... 3 " . !1 0 ! ! $ 2 0 & $ $ " $ b 4 N E E1 PIN 1 ID BY LASER MARK 1 2 3 e e1 D A A2 c L A1 L1 4$! 6% 9 &2! !5 $! 55## 6 *+ 2$ 7%$!" 5 8 )*+ "2$ 7- : $ " "2 0 0 !! $ "&& 7- ="$ " "2 0 7- 5 $ 67 6 ="$ ; < ; ) ; ) # ; # ; < ; /$5 $ 5 ; /$ $ 5 ) ; < /$ > ; > 5 "0 !! < ; 5 "="$ 9 ; ) !! "#"$%" "& ! $%!!"& ! $%!!! $ ' ! "$ #() *+, * ! ! $ ' $- % !..$%$$ ! " !" . + <* DS20005004D-page 30 2011-2015 Microchip Technology Inc. MCP16301/H Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 2011-2015 Microchip Technology Inc. DS20005004D-page 31 MCP16301/H 6-Lead Plastic Small Outline Transistor (CHY) [SOT-23] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging b 4 N E E1 PIN 1 ID BY LASER MARK 1 2 3 e e1 D A A2 c L A1 L1 Units Dimension Limits Number of Pins MILLIMETERS MIN N NOM MAX 6 Pitch e 0.95 BSC Outside Lead Pitch e1 1.90 BSC Overall Height A 0.90 - Molded Package Thickness A2 0.89 - 1.45 1.30 Standoff A1 0.00 - 0.15 Overall Width E 2.20 - 3.20 Molded Package Width E1 1.30 - 1.80 Overall Length D 2.70 - 3.10 Foot Length L 0.10 - 0.60 Footprint L1 0.35 - 0.80 Foot Angle I 0 - 30 Lead Thickness c 0.08 - 0.26 Lead Width b 0.20 - 0.51 Notes: 1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side. 2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing C04-028B DS20005004D-page 32 2011-2015 Microchip Technology Inc. MCP16301/H 6-Lead Plastic Small Outline Transistor (CHY) [SOT-23] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 2011-2015 Microchip Technology Inc. DS20005004D-page 33 MCP16301/H NOTES: DS20005004D-page 34 2011-2015 Microchip Technology Inc. MCP16301/H APPENDIX A: REVISION HISTORY Revision D (April 2015) The following is the list of modifications: 1. 2. 3. 4. 5. Updated the Features section. Updated the input voltage and resistor values in the Typical Applications section. Added Figure 2-6. Updated Examples 5-1 and 5-2. Updated the RTOP value in Figures 5-1, 5-2, 6-1 and 6-5. Revision C (November 2013) The following is the list of modifications: 1. 2. 3. Added new device to the family (MCP16301H) and related information throughout the document. Added package markings and drawings for the MCP16301H device. Updated the Product Identification System section. Revision B (November 2012) The following is the list of modifications: 1. 2. 3. 4. 5. Added Extended Temperature characteristic. Added 6-lead SOT-23 package version (CH code). Updated the following characterization charts: Figures 2-7, 2-8, 2-9, 2-10, 2-12, 2-13 and 214. Updated Section 7.0, Packaging Information. Updated the Product Identification System section. Revision A (May 2011) * Original Release of this Document. 2011-2015 Microchip Technology Inc. DS20005004D-page 35 MCP16301/H NOTES: DS20005004D-page 36 2011-2015 Microchip Technology Inc. MCP16301/H PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X -X /XXX Device Tape and Reel Temperature Range Package Device: MCP16301T: High-Voltage Step-Down Regulator, Tape and Reel MCP16301HT: High-Voltage Step-Down Regulator, Tape and Reel Temperature Range: E I Package: CH = Plastic Small Outline Transistor (SOT-23), 6-lead CHY*= Plastic Small Outline Transistor (SOT-23), 6-lead *Y = -40C to +125C = -40C to +85C (Extended) (Industrial) Examples: a) MCP16301T-I/CHY: b) MCP16301T-E/CH: c) MCP16301HT-E/CH: Step-Down Regulator, Tape and Reel, Industrial Temperature, 6LD SOT-23 package Step-Down Regulator, Tape and Reel, Extended Temperature, 6LD SOT-23 package Step-Down Regulator, Tape and Reel, Extended Temperature, 6LD SOT-23 package = Nickel palladium gold manufacturing designator. 2011-2015 Microchip Technology Inc. DS20005004D-page 37 MCP16301/H NOTES: DS20005004D-page 38 2011-2015 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * Microchip products meet the specification contained in their particular Microchip Data Sheet. * Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. * There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. * Microchip is willing to work with the customer who is concerned about the integrity of their code. * Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." 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Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet, KleerNet logo, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, RightTouch logo, REAL ICE, SQI, Serial Quad I/O, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. (c) 2011-2015, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. ISBN: 978-1-63277-328-9 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2011-2015 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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