PD - 91483E IRF9540NS/L Advanced Process Technology Surface Mount (IRF9540NS) l Low-profile through-hole (IRF9540NL) l 175C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET(R) Power MOSFET l D l VDSS = -100V RDS(on) = 0.117 G Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9540L) is available for lowprofile applications. ID = -23A S D 2 Pak TO-262 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C V GS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units -23 -16 -76 3.8 140 0.91 20 430 -11 14 -5.0 -55 to + 175 A W W W/C V mJ A mJ V/ns 300 (1.6mm from case ) C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. Units 1.1 40 C/W 03/11/03 IRF9540NS/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. -100 -2.0 5.3 Typ. -0.11 15 67 51 51 LS Internal Source Inductance 7.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance 1300 400 240 V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Max. Units Conditions V VGS = 0V, ID = -250A V/C Reference to 25C, ID = -1mA 0.117 VGS = -10V, I D = -11A -4.0 V VDS = VGS, I D = -250A S VDS = -50V, ID = -11A -25 VDS = -100V, V GS = 0V A -250 VDS = -80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 97 ID = -11A 15 nC VDS = -80V 51 VGS = -10V, See Fig. 6 and 13 VDD = -50V ID = -11A ns RG = 5.1 RD = 4.2, See Fig. 10 Between lead, nH and center of die contact VGS = 0V pF VDS = -25V = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time IS I SM V SD t rr Q rr ton Min. Typ. Max. Units Conditions D MOSFET symbol -23 showing the A G integral reverse -76 p-n junction diode. S -1.6 V TJ = 25C, IS = -11A, VGS = 0V 150 220 ns TJ = 25C, IF = -11A 830 1200 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. Starting TJ = 25C, L = 7.1mH Uses IRF9540N data and test conditions max. junction temperature. ( See fig. 11 ) RG = 25, I AS = -11A. (See Figure 12) ISD -11A, di/dt -470A/s, VDD V(BR)DSS, TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. IRF9540NS/L 100 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 10 -4.5V 20s PULSE WIDTH Tc = 25C A 1 0.1 1 10 10 -4.5V R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) 2.5 TJ = 25C TJ = 175C 10 1 VDS = -25V 20s PULSE WIDTH 6 7 8 9 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 A 100 Fig 2. Typical Output Characteristics 100 5 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0.1 20s PULSE WIDTH TC = 175C 1 0.1 100 -VDS , Drain-to-Source Voltage (V) 4 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) TOP 10 A I D = -19A 2.0 1.5 1.0 0.5 VGS = -10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature IRF9540NS/L 20 3000 C, Capacitance (pF) 2500 2000 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Ciss 1500 Coss 1000 Crss 500 0 10 VDS = -80V VDS = -50V VDS = -20V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 1 I D = -11A 0 100 20 60 80 A 100 Q G , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -I D , Drain Current (A) -ISD , Reverse Drain Current (A) 40 10 TJ = 175C TJ = 25C 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage A 1.6 100 100s 10 1ms TC = 25C TJ = 175C Single Pulse 1 1 10ms A 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area IRF9540NS/L 25 RD V DS V GS ID , Drain Current (A) 20 D.U.T. RG - + 15 V DD -10V Pulse Width 1 s Duty Factor 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 td(on) tr t d(off) tf VGS 0 25 50 75 100 125 150 175 10% TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.01 0.00001 0.05 0.02 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 L VDS D.U.T RG IAS -20V tp VDD A DRIVER 0.01 15V Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) IRF9540NS/L 1200 TOP 1000 BOTTOM 800 600 400 200 A 0 25 I AS ID -4.7A -8.1A -11A 50 75 100 125 150 Starting TJ , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .3F -10V QGS .2F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 175 IRF9540NS/L Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS * + - V DD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS [ISD] IRF9540NS/L D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS SEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L IRF9540NS/L TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C IRF9540NS/L D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/03 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/