SFH 300
SFH 300 FA
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
Lead (Pb) Free Product - RoHS Compliant
SFH 300 SFH 300 FA
2007-04-02 1
Wesentliche Merkmale
Speziell geeignet für Anwendunge n im Bereich
von 450 nm bis 1100 nm (SFH 300) und bei
880 nm (SFH 300 FA)
Hohe Linearität
5 mm-Plastikbauform im LED-Gehäuse
Gruppiert lieferbar
Anwendungen
Computer-Blitzlichtgeräte
Lichtschranken für Gleich- und
Wechsellichtbetrieb
Industrieelektronik
„Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code Typ
Type Bestellnummer
Ordering Code
SFH 300 Q62702P1189 SFH 300 FA Q62702-P1193
SFH 300-3/4 Q62702P3586 SFH 300 FA-3/4 Q62702-P3585
Features
Especially suitable for applications from
450 nm to 1100 nm (SFH 300) and of 880 nm
(SFH 300 FA)
High linearity
5 mm LED plastic package
Available in groups
Applications
Computer-controlled flashes
Photointerrupters
Industrial electronics
For control and drive circuits
2007-04-02 2
SFH 300, SFH 300 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 + 100 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 35 V
Kollektorstrom
Collector curr ent IC50 mA
Kollektorspitzenstrom, τ < 10 μs
Collector surge current ICS 100 mA
Emitter-Kollektorspannung
Emitter-collector voltage VEC 7 V
Verlustleistung, TA = 25 °C
Power dissipation Ptot 200 mW
Wärmewiderstand
Thermal resistance RthJA 375 K/W
SFH 300, SFH 300 FA
2007-04-02 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 300 SFH 300 FA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 880 880 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sens itivity
S = 10% of Smax
λ450 1100 730 1120 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A0.11 0.11 mm2
Abmessungen der Chipfläche
Dimensions of chip area L × B
L × W0.5 × 0.5 0.5 × 0.5 mm × mm
Halbwinkel
Half angle ϕ± 25 ± 25 Grad
deg.
Kapazität
Capacitance
VEC = 0 V, f = 1 MHz, E = 0
CCE 7.5 7.5 pF
Dunkelstrom
Dark current
VCE = 20V, E = 0
ICEO 1 (50) 1 (50) nA
2007-04-02 4
SFH 300, SFH 300 FA
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
-2 -3 -4
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.5 mW/cm2, VCE = 5 V
SFH 300:
Ev = 1000 Ix, Normlicht/standard light A,
VCE = 5 V
IPCE
IPCE
0.63 1.25
3.0
1 2
4.8
1.6
7.7
mA
mA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf7.5 10 10 μs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = IPCEmin1) × 0.3,
Ee = 0.5 mW/cm2
VCEsat 130 140 150 mV
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.
1) IPCEmin is the min. photocurrent of the specified group.
SFH 300, SFH 300 FA
2007-04-02 5
Relative Spectral Sensitivity,
SFH 300 Srel = f (λ)
Photocurrent
IPCE/IPCE 25° = f (TA), VCE = 5 V
Directional Characteristics
Srel = f (ϕ)
0
10
20
30
40
50
60
70
80
90
100
400 500 600 700 800 900 1000 1100
λnm
Srel
%
Relative Spectral Sensitivity,
SFH 300 FA Srel = f (λ)
Photocurrent
IPCE = f (Ee), VCE = 5 V
0
10
20
30
40
50
60
70
80
90
100
400 500 600 700 800 900 1000 1100
λ
Srel
%
nm
Dark Current ICEO/ICEO25° = f (TA),
VCE = 20 V, E = 0
Dark Current
ICEO = f (VCE), E = 0
Collector-Emitter Capacitance
CCE = f (VCE), f = 1 MHz, E = 0
0.01
0.1
1
10
100
1000
10000
-25 0 25 50 75 100
T
A
nA
I
CEO
°C
0.01
0.1
1
10
0 5 10 15 20 25 30 35
ICEO
VCE
V
nA
0
1
2
3
4
5
6
7
8
1E-03 1E-02 1E-01 1E+00 1E+01 1E+02
CCE
pF
V
VC
E
2007-04-02 6
SFH 300, SFH 300 FA
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
0.6 (0.024)
0.4 (0.016)
5.9 (0.232)
5.5 (0.217)
4.5 (0.177)
4.2 (0.165)
7.8 (0.307)
7.5 (0.295)
9.0 (0.354)
8.2 (0.323)
25.2 (0.992)
24.2 (0.953)
1.8 (0.071)
1.2 (0.047)
2.54 (0.100)
spacing
0.6 (0.024)
0.4 (0.016)
1.0 (0.039)
0.7 (0.028)
ø5.1 (0.201)
Chip position
Area not flat
Emitter
GEOY6652
1.3 (0.051)
1.0 (0.039)
11.6 (0.457)
11.2 (0.441)
Collector
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
SFH 300, SFH 300 FA
2007-04-02 7
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
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dangerous substances. For information on the types in question please contact our Sales Organiza tion.
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to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
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and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.