Continental Device India Limited Data Sheet Page 1 of 3
2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS
2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS
General Purpose Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS 6486 6487 6488
6489 6490 6491
Collector-base voltage (open emitter) VCBO max. 50 70 90 V
Collector-emitter voltage (open base) VCEO max. 40 60 80 V
Collector current ICmax. 15 A
Total power dissipation up to TC = 25°C Ptot max. 75 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 5 A; IB = 0.5 A VCEsat max. 1.3 V
D.C. current gain
IC = 5 A; VCE = 4 V hFE min. 20
max. 150
RATINGS (at TA=25°C unless otherwise specified)
Limiting values 6486 6487 6488
6489 6490 6491
Collector-base voltage (open emitter) VCBO max. 50 70 90 V
Collector-emitter voltage (open base) VCEO max. 40 60 80 V
Emitter-base voltage (open collector) VEBO max. 5.0 V
2N6486, 2N6487, 2N6488
2N6489, 2N6490, 2N6491
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
123
J
M
G
D
H
A
OO
K
N
L
FE
CDIM MIN. MAX.
All diminsions in mm.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7
123
4
IS / IECQ C 700000
IS / IECQ C 750100
IS/IS O 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
http://www.bocasemi.com page: 1
Boca Semiconductor Corp.
BSC
Continental Device India Limited Data Sheet Page 2 of 3
Collector current ICmax. 15 A
Base current IBmax. 5.0 A
Total power dissipation up to TC = 25°C Ptot max. 75 W
Derate above 25°C max. 0.6
W/
°
C
Total power dissipation up to TA = 25°C Ptot max. 1.8 W
Derate above 25°C max. 0.014
W/
°
C
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150 °
C
THERMAL RESISTANCE
From junction to ambient Rth j–a 70 °
C/W
From junction to case Rth j–c 1.67 °
C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 6486 6487 6488
6489 6490 6491
Collector cutoff current
IB = 0; VCE = 20 V ICEO max. 1.0 – – mA
IB = 0; VCE = 30 V ICEO max. – 1.0 – mA
IB = 0; VCE = 40 V ICEO max. – – 1.0 mA
VEB(off) = 1.5 V; VCE = 45 V ICEX max.500 – – µA
VEB(off) = 1.5 V; VCE = 65 V ICEX max. – 500 – µA
VEB(off) = 1.5 V; VCE = 85 V ICEX max. – – 500 µA
VEB(off) = 1.5 V; VCE = 40 V; TC=150°C ICEX max. 5.0 – – mA
VEB(off) = 1.5 V; VCE = 60 V; TC=150°C ICEX max. – 5.0 – mA
VEB(off) = 1.5 V; VCE = 80 V; TC=150°C ICEX max. – – 5.0 mA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 1.0 mA
Breakdown voltages
IC = 200 mA; IB = 0 VCEO(sus)* min. 40 60 80 V
IC = 1 mA; IE = 0 VCBO min. 50 70 90 V
IC = 200 mA; VBE = 1.5 V VCEX(sus)* min. 50 70 90 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltages
IC = 5 A; IB = 0.5 A VCEsat* max. 1.3 V
IC = 15 A; IB = 5 A VCEsat* max. 3.5 V
Base-emitter on voltage
IC = 5 A; VCE = 4 V VBE(on)* max. 1.3 V
IC = 15 A; VCE = 4 V VBE(on)* max. 3.5 V
D.C. current gain
IC = 5 A; VCE = 4 V hFE* min. 20
max. 150
IC = 15 A; VCE = 4 V hFE* min. 5.0
Transition frequency
IC = 1 A; VCE = 4 V; f = 1 MHz fT(1) min. 5.0 MHz
Small signal current gain
IC = 1.0A; VCE = 4V; f = 1.0 KHz hfe min. 25
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%
(1) fT = |hfe|• ftest
2N6486, 2N6487, 2N6488
2N6489, 2N6490, 2N6491
http://www.bocasemi.com page: 2
