Features
High current and high surge ratings
dv/dt = 1000V/µs option
Glass-metal seal up to 1200V
Threaded studs UNF 1/2"-20UNF-2A
Types up to 1200V VRRM/VDRM
di/dt = 300A/µs
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 110 A
@ TC90 °C
IT(RMS) 172 A
ITSM @ 50Hz 2080 A
@ 60Hz 2180 A
I2t@
50Hz 21.7 KA2s
@ 60Hz 19.8 KA2s
VDRM/VRRM 400 to 1200 V
tqtypical 110 µs
TJ- 40 to 140 °C
Parameters 111RIA Units
Major Ratings and Characteristics
110A
PHASE CONTROL THYRISTORS Stud Version
111RIA SERIES
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case style
TO-209AC (TO-94)
111RIA Series
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max.
VVmA
40 400 500
111RIA 80 800 900 20
120 1200 1300
IT(AV) Max. average on-state current 110 A 180° conduction, half sine wave
@ Case temperature 90 °C
IT(RMS) Max. RMS on-state current 172 DC @ 83°C case temperature
ITSM Max. peak, one-cycle 2080 t = 10ms No voltage
non-repetitive surge current 2180 A t = 8.3ms reapplied
1750 t = 10ms 100% VRRM
1830 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 21.7 t = 10ms No voltage Initial TJ = TJ max.
19.8 t = 8.3ms reapplied
15.3 t = 10ms 100% VRRM
14.0 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 217 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
VT(TO)2High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage 1.57 V Ipk= 350A, TJ = TJ max., tp = 10ms sine pulse
IHMaximum holding current 150
ILTypical latching current 400
0.82 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
2.16 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.70 (I > π x IT(AV)),TJ = TJ max.
Parameter 111RIA Units Conditions
1.02 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 25°C, anode supply 6V resistive load
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 50A, TJ = TJ max., di/dt = -5A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 25Ω
Parameter 111RIA Units Conditions
tdTypical delay time 1
Switching
tqTypical turn-off time 110
µs
300 A/µs
111RIA Series
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dv/dt Maximum critical rate of rise of
off-state voltage
IRRM Max. peak reverse and off-state
IDRM leakage current
Blocking
500 V/µs TJ = TJ max. linear to 80% rated VDRM
Parameter 111RIA Units Conditions
20 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 12 TJ = TJ max, tp ≤ 5ms
PG(AV) Maximum average gate power 3.0 TJ = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT DC gate current required TJ = - 40°C
to trigger mA TJ = 25°C
TJ = 140°C
VGT DC gate voltage required TJ = - 40°C
to trigger V TJ = 25°C
TJ = 140°C
IGD DC gate current not to trigger 6.0 mA
Parameter 111RIA Units Conditions
20
10
Triggering
TJ = TJ max
TYP. MAX.
180 -
80 120
40 -
2.5 -
1.6 2
1-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
VT
J = TJ max, tp ≤ 5ms
TJMax. operating temperature range -40 to 140
Tstg Max. storage temperature range -40 to 150
RthJC Max. thermal resistance,
junction to case
RthCS Max. thermal resistance,
case to heatsink
T Mounting torque, ± 10% 15.5 Non lubricated threads
(137)
14 Lubricated threads
(120)
wt Approximate weight 130 g
Parameter 111RIA Units Conditions
0.27 DC operation
0.1 Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
°C
K/W
Nm
(lbf-in)
Case style TO - 209AC (TO-94) See Outline Table
VGD DC gate voltage not to trigger 0.25 V
111RIA Series
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Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
180° 0.043 0.031 TJ = TJ max.
120° 0.052 0.053
90° 0.066 0.071 K/W
60° 0.096 0.101
30° 0.167 0.169
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
Ordering Information Table
3
11 1 RIA 120
Device Code
1254
1-I
T(AV) rated average output current (rounded/10)
2- 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
3- Thyristor
4- Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
5- Critical dv/dt: None = 500V/µsec
S90 = 1000V/µsec
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
12
1/2"-20UNF-2A *
29.5 (1.16)
* FOR METRIC DEVICE: M12 x 1.75 E 6
MAX.
44 (1.73)
10
23.5 DIA.
16.5
(0.65)
10 (0.39)
24 (0.94) MAX.
(0 39)
(0.93) MAX.
21(0.83)
1.5 (0.06) DIA.
(0 . 47 )
47 (1.85)
MAX.
GLASS-METAL SEAL
FLAG TERMINALS
SW 27
2.4 (0.09)
5.6 (0.22)
5.5 (0.22) DIA.
111RIA Series
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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Outline Table
Fast-on Terminals
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
WHITE SHRINK
C.S. 0.4 mm 2
215 (8.46) 10 (0.39)
WHITE GATE
RED SHRINK
RED CATHODE
RED SILICON RUBBER
4.3 (0.17) DIA.
21 (0.83)
* FOR METRIC DEVICE : M12 x 1.75 E 6
10 (0.39) MAX.
157 (6.18)
170 (6.69)
(.0006 s.i.)
GLASS METAL SEAL
8.5 (0.3) DIA.
16.5 (0.65) MAX.
23.5 (0.92) MAX. DIA.
MAX.
24 (0.94) MAX.
55 (2.17) MIN.
C.S. 16mm 2
FLEXIBLE LEAD
(.025 s.i.)
2.5 (0.10) MAX.
20 (0.79) MIN.
1/2"-20UNF-2A *
SW 27
29.5 (1.16) MAX.
9.5 (0.37) MIN.
AMP. 280000-1
REF-250
Average On-State Current (A)
Maximum Allowable Case Temperature (°C)
Average On-State Current (A)
Maximum Allowable Case Temperature (°C)
80
90
100
110
120
130
140
0 20 40 60 80 100 120
30˚ 60˚ 90˚ 120˚ 180˚
Conduction Angle
111RIA Series
RthJC (DC) = 0.27 K/W
70
80
90
100
110
120
130
140
0 30 60 90 120 150 180
DC
30˚60˚90˚120˚180˚
Conduction Period
111RIA Series
RthJC (DC) = 0.27 K/W
111RIA Series
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 4 - On-state Power Loss Characteristics
Fig. 3 - On-State Power Loss Characteristics
Average On-State Current (A)
Maximum Allowable On-State Power Loss (W)
Maximum Allowable Ambient Temperature (°C)
Average On-State Current (A)
Maximum Allowable On-State Power Loss (W)
Maximum Allowable Ambient Temperature (°C)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-State Current (A)
0 20 40 60 80 100 120 140
0.8 K/W
1 K/W
1.5 K/W
4 K/W
5 K/W
0.6 K/W
R = 0.3 K/W - Delta R
thSA
2 K/W
800
1000
1200
1400
1600
1800
2000
1 10 100
111RIA Series
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 140˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
500
1000
1500
2000
2500
0.01 0.1 1 10
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
111RIA Series
Initial Tj = 140˚C
No Voltage Reapplied
Rated Vrrm Reapplied
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120
180˚
120˚
90˚
60˚
30˚
RMS Limit
Conduction Angle
111RIA Series
T = 140˚C
J
0
20 40 60 80 100 120 140
R = 0.3 K/W - Delta R
0.6 K/W
0.8 K/W
1 K/W
1.5 K/W
2 K/W
4 K/W
5 K/W
thSA
0
20
40
60
80
100
120
140
160
180
200
220
0 20 40 60 80 100 120 140 160 180
DC
180˚
120˚
90˚
60˚
30˚
RMS Limit
Conduction Period
111RIA Series
T = 140˚C
J
111RIA Series
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Fig. 9 - Gate Characteristics
Fig. 8 - Thermal Impedance Z thJC Characteristic
Fig. 7 - On-State Voltage Drop Characteristics
Instantaneous On-State Voltage (V)
Instantaneous On-State Current (A)
1
10
100
1000
10000
012345
111RIA Series
Tj = 140˚C
Tj = 25˚C
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z thJC (K/W)
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
111RIA Series
Steady State Value
RthJC = 0.27 K/W
(DC Operation)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD IGD
(b)
(a)
(1)
(3)
a) Recommended load line for
b) Recommended load line for
Frequency Limited by PG(AV)
Tj=25 ˚C
Tj=-40 ˚C
Tj=140 ˚C
(2)
(1) PGM = 12W, tp = 5ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 200W, tp = 300µs
<=30% rated di/dt: 15V, 40ohms
tr<=1 µs, tp=>6µs
rated di/dt: 20V, 30ohms;
tr<=0.5 µs, tp=>6µs
Rectangular gate pulse
Device: 111RIA Series
(4)
111RIA Series
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Bulletin I25204 01/01
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