©2003 Fairchild Semiconductor Corporation Rev. A, January 2003
BC63916
NPN Epitaxia l Si licon Transistor
Absolute Maximum Rating s Ta=25°C unless otherwise noted
PW=5ms, Duty Cycle=10%
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCER Collector-Emitter Volt age at RBE=1K100 V
VCES Collector-Emitter Volt age 100 V
VCEO Collector-Emitter Volt age 80 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current 1 A
PCCollector Power Dissipation 1 W
TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 100 V
BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 80 V
BVEBO Emitter-Base Breakdown V oltage IE = 10µA, IC = 0 5.0 V
ICBO Collector Cut-off Current VCB = 30V, IE = 0 100 nA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA
hFE1
hFE2
hFE3
DC Current Gain VCE = 2V, IC = 5mA
VCE = 2V, IC = 150mA
VCE = 2V, IC = 500mA
25
100
25 250
VCE(sat) Collector-Emitter Satu ration Voltage IC = 500mA, IB = 50mA 0.5 V
VBE(on) Base-Emitter On Voltage VCE = 2V, IC = 500mA 1 V
fTCurrent Gain Bandwidth Product VCE = 5V, IC=10mA,
f = 50MHz 100 MHz
BC63916
Switching and Amplifier Applications
1. Emitter 2. Collector 3. Base
TO-92
1
Note: All package 97 or 98 transistors are leadformed
to this configuration prior to bulk shipment. Order
L34Z option if in-line leads are preferred on package
97 or 98.
**;
* Standard Option on 97 & 98 package code
Package Dimensions
BC63916
Dimensions in Millimeters
Rev. A, January 2003
TO-92
©2003 Fairchild Semiconductor Corporation
©2003 Fairchild Semiconductor Corporation Rev. I2
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