VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 1Document Number: 94936
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 15 A
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-32CTQ... Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) 2 x 15 A
VR25 V, 30 V
VF at IF0.40 V
IRM max. 97 mA at 125°C
TJ max. 150 °C
EAS 13 mJ
Package D2PAK (TO-263AB), TO-262AA
Circuit configuration Common cathode
D
2
PAK (TO-263AB) TO-262AA
1
3
2
1
3
2
VS-32CTQ...S-M3VS-32CTQ...-1-M3
Base
common
cathode
Anode Anode
Common
cathode
13
2
2
Base
common
cathode
Anode Anode
Common
cathode
13
2
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 30 A
VRRM 25, 30 V
IFSM tp = 5 μs sine 900 A
VF15 Apk, TJ = 125 °C 0.40 V
TJRange -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-32CTQ025S-M3
VS-32CTQ025-1-M3
VS-32CTQ030S-M3
VS-32CTQ030-1-M3 UNITS
Maximum DC reverse voltage VR25 30 V
Maximum working peak reverse voltage VRWM
VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 2Document Number: 94936
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 115 °C, rectangular waveform 30
A
Maximum peak one cycle non-repetitive
surge current
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
900
10 ms sine or 6 ms rect. pulse 250
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH 13 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 3A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
15 A TJ = 25 °C 0.49
V
30 A 0.58
15 A TJ = 125 °C 0.40
30 A 0.53
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
1.75 mA
TJ = 125 °C 97
Threshold voltage VF(TO) TJ = TJ maximum 0.233 V
Forward slope resistance rt9.09 m
Maximum junction capacitance per leg CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 1300 pF
Typical series inductance per leg LSMeasured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -55 to +150 °C
Maximum thermal resistance,
junction to case per leg RthJC DC operation
See fig. 4 3.25
°C/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf cm
(lbf in)
maximum 12 (10)
Marking device
Case style D2PAK (TO-263AB) 32CTQ025S
32CTQ030S
Case style TO-262AA 32CTQ025-1
32CTQ030-1
VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 3Document Number: 94936
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
100
10
1000
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
1.4 1.8
1.6
0.20 0.4 0.6 0.8 1.0 1.2
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.001
1
10
100
0.1
0.01
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
1051520
30
25
0
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
100
1000
10 000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
105 152025 35
30
0
TJ = 25 °C
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 4Document Number: 94936
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
80
90
100
110
120
130
140
160
150
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
1051520
25
0
DC
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
0
2
4
6
8
10
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
1051520
25
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
100
1000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 5Document Number: 94936
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-32CTQ025S-M3 50 1000 Antistatic plastic tubes
VS-32CTQ025STRR-M3 800 800 13" diameter reel
VS-32CTQ025STRL-M3 800 800 13" diameter reel
VS-32CTQ025-1-M3 50 1000 Antistatic plastic tubes
VS-32CTQ030S-M3 50 1000 Antistatic plastic tubes
VS-32CTQ030STRR-M3 800 800 13" diameter reel
VS-32CTQ030STRL-M3 800 800 13" diameter reel
VS-32CTQ030-1-M3 50 1000 Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions D2PAK (TO-263AB) www.vishay.com/doc?96164
TO-262AA www.vishay.com/doc?96165
Part marking information D2PAK (TO-263AB) www.vishay.com/doc?95444
TO-262AA www.vishay.com/doc?95443
Packaging information www.vishay.com/doc?96424
025 = 25 V
030 = 30 V
2- Current rating (30 A)
3- Circuit configuration: C = common cathode
4- T = TO-220
5- Schottky “Q” series
6- Voltage ratings
7- S = D
2
PAK (TO-263AB)
-1 = TO-262AA
8- None = tube
TRL = tape and reel (left oriented - for D
2
PAK (TO-263AB) only)
TRR = tape and reel (right oriented - for D
2
PAK (TO-263AB) only)
9
1- Vishay Semiconductors product
Device code
51 32 4 6 7 8 9
VS- 32 C T Q 030 S TRL -M3
- -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 08-Jul-15 1Document Number: 95046
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D2PAK
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC
®
outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 11-Jul-2019 1Document Number: 95419
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-262
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Outline conform to JEDEC TO-262 except A1 (maximum),
b (minimum) , D1 (minimum) and L2 where dimensions derived
the actual package outline
SYMBOL
MILLIMETERS INCHES
NOTES
MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190
A1 2.03 3.02 0.080 0.119
b 0.51 0.99 0.020 0.039
b1 0.51 0.89 0.020 0.035 4
b2 1.14 1.78 0.045 0.070
b3 1.14 1.73 0.045 0.068 4
c 0.38 0.74 0.015 0.029
c1 0.38 0.58 0.015 0.023 4
c2 1.14 1.65 0.045 0.065
D 8.51 9.65 0.335 0.380 2
D1 6.86 8.00 0.270 0.315 3
E 9.65 10.67 0.380 0.420 2, 3
E1 7.90 8.80 0.311 0.346 3
e 2.54 BSC 0.100 BSC
L 13.46 14.10 0.530 0.555
L1 - 1.65 - 0.065 3
L2 3.36 3.71 0.132 0.146
(4)
(4) Base
metal
Plating b1, b3
(b, b2)
c1
c
Section B - B and C - C
Scale: None
Section A - A
(3)
E1
(3)D1
E
B
A
A
A
c2
c
A1
Seating
plane
Lead tip
(3)
(2) (3)
(2)
A
E
(Datum A)
L1
L2
BB
CC
3
2
1
L
D
2 x e
3 x b2
3 x b
0.010 A B
M M
Modified JEDEC® outline TO-262
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2019 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
