= oat ~ = = == = = ial nae nee ee et met FAIRCHILD SEMICONDUCTOR . ay DEB ay9u74 ooazasa 9 acs FRPTIOO/A/B 774 a) FPT110/A/B General Purpose Silicon Planar Phototransistor General Description oo, PACKAGE. The FPT100 and FPT110 are 3-terminal npn Pianar . FPT100 OPTO-26 phototransistors with exceptionally stable characteristics and - - _ FPTi00A OPTO-26 high iHumination-sensitivity. The availability of the base pin FPTi00B - OPTO-26 gives wide latitude for flexible circuit design. The case is made FPT110 - OPTO-28 ~ of a special plastic compound with transparent resin - FPTII0A OPTO-28 encapsulation that exhibits stable characteristics under high FPT110B OPTO-28 humidity conditions. The controlled sensitivities offered in the A and B versions give the circuit designer increased , flexibility. - - Exceptionally Stable Characteristics mt . 7 Controlled Sensitivities ABSOLUTE MAXIMUM RATINGS - oS ee Temperatures & Humidity Storage Temperature ~55C to 100C - Operating Temperature . -55 C to 85C : Relative Humidity at 65C - 85% Power Dissipation (Notes 1 & 2) Total Dissipation at Te = 26C . 200 mW - Ta = 25C " 100 mW Voltages & Currents (Note 5) Vca Collector-to-Base Voltage ~ 50V Vces Collector-to-Emitter Sustaining Voltage (Note 3) 30 V Ic Collector Current 25 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 9) SYMBOL| CHARACTERISTIC MIN | TYP | MAX | UNITS TEST CONDITIONS BVeco Emitter-to-Collector 7.0 Vv le = 100 pA Breakdown Voltage (Note 5) ; BVceo Cotlector-to-Base Breakdown 50 120 Vv Ic = 100 pA Voltage (Note 5) NOTES: 1. These are steady state limits. The factory should be consulted on applications involving pulsed or fow duty cycle operations. 2. These ratings give a maximum junction temperature of 85 Gand junction-to-case thermal resistance of 300 C/W (erating factor of 3.33 mW/? G, anda junction-to-ambient thermal resistance of 600 C/W (derating factor of 1.67 mW/C). 3. Measured at noted irradiance as emitted from a tungsten tilament lamp at a color temperature of 2854 K. The effective photosensitive areais typically 1.25 mm? (FPT100A/8) and 0.78 mm? (FPT110A/B). 4. These are values obtained at noted Irradiance as emitted from a GaAs source at 900 nm, 5. Measured with radiation flux intensity of less than 0.1 pW/cm? over the spectrum from 100-1500 nm. 6. Riise time is defined as the time required for Ice to rise from 10% to 90% of peak value. Fall time is defined as the time required for Icc to decrease from 90% to 10% of peak value. Test conditions are: Ve = .0 V, Ice = 4.0 mA, Ri = 100 9, GaAs source. No electrical connection to base lead. 8. No electrical connection to emitter lead. 9, For product family characteristic curves, refer to Curve Set FPT100. 3-77 N mene -