ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of telecom and general high voltage circuits. A SOT23-5 version is also available (ZXMP2120E5). SOT223 FEATURES * High voltage * Low on-resistance * Fast switching speed * Low gate drive * Low threshold * SOT223 package variant engineered to increase spacing between high voltage pins. APPLICATIONS * Active clamping of primary side MOSFETs in 48 volt DC-DC converters S ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXMP2120G4TA 7 12mm embossed 1,000 units ZXMP2120G4TC 13 12mm embossed 4,000 units D N/C G DEVICE MARKING ZXMP 2120 ISSUE 2 - SEPTEMBER 2006 1 Pinout - top view ZXMP2120G4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS -200 V V GS 20 V ID -200 mA I DM -1 A Pulsed Source Current (Body Diode) (b) I SM -1 A Power Dissipation at T amb =25C (a) Linear derating factor P tot 2.0 W 1.6 mW/C Operating and Storage Temperature Range T j :T stg -55 to +150 C Gate Source Voltage Continuous Drain Current (VGS =10V; Tamb =25C) Pulsed Drain Current (a) (b) THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R JA VALUE UNIT 62.5 C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 2 - SEPTEMBER 2006 2 ZXMP2120G4 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS -200 Gate-Source Threshold Voltage V GS(th) -1.5 Gate-Body Leakage MAX. UNIT CONDITIONS V I D =-1mA, V GS =0V -3.5 V I =-1mA, V DS = V GS D I GSS 20 nA V GS = 20V, V DS =0V Zero Gate Voltage Drain Current I DSS -10 -100 A A V DS =-200 V, V GS =0V V DS =-160 V, V GS =0V, T=125C (2) On-State Drain Current (1) I D(on) mA V DS =-25 V, V GS =-10V Static Drain-Source On-State Resistance (1) R DS(on) V GS =-10V, I D =-150mA mS V DS =-25V, I D =-150mA Forward Transconductance (1)(2) g fs Input Capacitance (2) -300 25 50 C iss 100 pF Common Source Output Capacitance (2) C oss 25 pF Reverse Transfer Capacitance (2) C rss 7 pF t d(on) 7 ns tr 15 ns t d(off) 12 ns tf 15 ns Turn-On Delay Time Rise Time (2)(3) Turn-Off Delay Time Fall Time (2)(3) (2)(3) (2)(3) (1) Measured under pulsed conditions. Width=300s. Duty cycle (R)2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator ISSUE 2 - SEPTEMBER 2006 3 V DS =-25V, V GS =0V, f=1MHz V DD -25V, I D =-150mA ZXMP2120G4 TYPICAL CHARACTERISTICS ISSUE 2 - SEPTEMBER 2006 4 ZXMP2120G4 CHARACTERISTICS ISSUE 2 - SEPTEMBER 2006 5 ZXMP2120G4 PACKAGE OUTLINE PAD LAYOUT DETAILS 3.8 0.15 2.0 0.079 6.3 0.248 2.0 0.079 1.5 0.059 2.3 0.091 mm inches Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - (c) Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - SEPTEMBER 2006 6