SUMMARY
V(BR)DSS =-200V; RDS(ON) = 25 ; ID= 200mA
DESCRIPTION
This 200V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of telecom and general high voltage circuits.
A SOT23-5 version is also available (ZXMP2120E5).
FEATURES
•High voltage
•Low on-resistance
•Fast switching speed
•Low gate drive
•Low threshold
•SOT223 package variant engineered to increase spacing between
high voltage pins.
APPLICATIONS
•Active clamping of primary side MOSFETs in 48 volt DC-DC converters
ORDERING INFORMATION
DEVICE REEL SIZE
(inches)
TAPE WIDTH (mm) QUANTITY
PER REEL
ZXMP2120G4TA 7 12mm embossed 1,000 units
ZXMP2120G4TC 13 12mm embossed 4,000 units
DEVICE MARKING
ZXMP
2120
ZXMP2120G4
ISSUE 2 - SEPTEMBER 2006
200V P-CHANNEL ENHANCEMENT MODE MOSFET
1
D
S
N/C
Pinout - top view
G
SOT223
ZXMP2120G4
ISSUE 2 - SEPTEMBER 2006
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS -200 V
Gate Source Voltage VGS ⫾20 V
Continuous Drain Current (VGS=10V; Tamb=25°C)(a) ID-200 mA
Pulsed Drain Current (b) IDM -1 A
Pulsed Source Current (Body Diode) (b) ISM -1 A
Power Dissipation at Tamb=25°C (a)
Linear derating factor
Ptot 2.0
1.6
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 62.5 °C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ZXMP2120G4
ISSUE 2 - SEPTEMBER 2006
3
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS
Drain-Source
Breakdown Voltage
BVDSS -200 V ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) -1.5 -3.5 V ID=-1mA, VDS=V
GS
Gate-Body Leakage IGSS 20 nA VGS=⫾20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS -10
-100
µA
µA
VDS=-200 V, VGS=0V
VDS=-160 V, VGS=0V,
T=125°C (2)
On-State Drain Current(1) ID(on) -300 mA VDS=-25 V, VGS=-10V
Static Drain-Source On-State
Resistance (1) RDS(on) 25 ΩVGS=-10V, ID=-150mA
Forward Transconductance (1)(2) gfs 50 mS VDS=-25V, ID=-150mA
Input Capacitance (2) Ciss 100 pF
Common Source Output
Capacitance (2) Coss 25 pF VDS=-25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crss 7pF
Turn-On Delay Time (2)(3) td(on) 7ns
VDD -25V, ID=-150mA
Rise Time (2)(3) tr15 ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ®2%
(2) Sample test.
(3) Switching times measured with 50Ωsource impedance and <5ns rise time on a pulse generator
TYPICAL CHARACTERISTICS
ZXMP2120G4
ISSUE 2 - SEPTEMBER 2006
4
ZXMP2120G4
ISSUE 2 - SEPTEMBER 2006
5
CHARACTERISTICS
ZXMP2120G4
6
ISSUE 2 - SEPTEMBER 2006
Europe
Zetex GmbH
Kustermann-park
Balanstraße 59
D-81541 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE OUTLINE
1.5
0.059
mm
inches
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.0
0.079
PAD LAYOUT DETAILS
DIM
Millimeters Inches
DIM
Millimeters Inches
Min Max Min Max Min Max Min Max
A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC
A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
D 6.30 6.70 0.248 0.264 - ----
PACKAGE DIMENSIONS
