VS-ST330SPbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 330 A FEATURES * Center amplifying gate * International standard case TO-118 (TO-209AE) * Hermetic metal case with ceramic insulator TO-118 (TO- 209AE) * Compression bonded encapsulation for heavy duty operations such as severe thermal cycling * Designed and qualified for industrial level PRIMARY CHARACTERISTICS IT(AV) 330 A VDRM/VRRM 400 V, 800 V, 1200 V, 1400 V, 1600 V, 2000 V VTM 1.52 V IGT 200 mA TJ -40 C to +125 C Package TO-118 (TO-209AE) Circuit configuration Single SCR * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS * DC motor controls * Controlled DC power supplies * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC VALUES UNITS 330 A 75 C 520 IT(RMS) ITSM I2t 50 Hz 9000 60 Hz 9420 50 Hz 405 60 Hz 370 VDRM/VRRM 400 to 2000 tq Typical TJ A kA2s V 100 s -40 to +125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST330S VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 20 2000 2100 VRSM, MAXIMUM IDRM/IRRM MAXIMUM AT NON-REPETITIVE PEAK VOLTAGE TJ = TJ MAXIMUM V mA 50 Revision: 27-Sep-17 Document Number: 94409 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330SPbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS 180 conduction, half sine wave 520 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t C 9000 t = 10 ms I2t A 75 t = 10 ms t = 8.3 ms No voltage reapplied 9420 100 % VRRM reapplied 7920 No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 405 370 287 t = 0.1 to 10 ms, no voltage reapplied 4050 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.834 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.898 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.687 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.636 Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 VTM IH Typical latching current IL TJ = 25 C, anode supply 12 V resistive load kA2s 262 VT(TO)1 Maximum on-state voltage A 7570 Low level value of threshold voltage Maximum holding current UNITS 330 DC at 75 C case temperature t = 8.3 ms Maximum I2t for fusing VALUES 600 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/s Typical delay time td Gate current A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 1.0 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 100 SYMBOL TEST CONDITIONS VALUES UNITS s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA Revision: 27-Sep-17 Document Number: 94409 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330SPbF Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL PGM Maximum peak gate power PG(AV) Maximum average gate power Maximum peak positive gate current IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM IGT DC gate current required to trigger 10.0 2.0 TJ = TJ maximum, tp 5 ms 3.0 TJ = TJ maximum, tp 5 ms V TJ = -40 C 200 - TJ = 25 C 100 200 TJ = 25 C IGD TJ = TJ maximum VGD DC gate voltage not to trigger A 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = 125 C DC gate current not to trigger MAX. TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = -40 C VGT TYP. TJ = TJ maximum, tp 5 ms TJ = 125 C DC gate voltage required to trigger VALUES TEST CONDITIONS 50 - 2.5 - 1.8 3 1.1 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range TEST CONDITIONS TJ -40 to +125 TStg -40 to +150 Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, case to heatsink RthC-hs Mounting torque, 10 % DC operation 0.10 Mounting surface, smooth, flat and greased 0.03 Non-lubricated threads 48.5 (425) N*m (lbf * in) 535 g Approximate weight Case style C See dimension - link at the end of datasheet K/W TO-118 (TO-209AE) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180 0.011 0.008 120 0.013 0.014 90 0.017 0.018 60 0.025 0.026 30 0.041 0.042 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 27-Sep-17 Document Number: 94409 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330SPbF Series Vishay Semiconductors ST330S Series RthJC (DC) = 0.10 K/ W 120 110 Conduc tion Angle 100 30 90 60 90 120 80 180 70 0 50 100 150 200 250 300 130 Maximum Allowable Case Temperature (C) 130 350 ST330S Series RthJC (DC) = 0.10 K/ W 120 110 100 Conduc tion Period 90 30 80 60 90 120 70 180 DC 60 0 100 200 300 400 500 600 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 480 400 elt -D a 0.2 K/ W RMSLimit 280 K/ W K/ W W K/ 320 0. 12 03 0. 360 0. 08 = 180 120 90 60 30 440 A hS R t R Maximum Average On-state Power Loss(W) Maximum Allowable Case Temperature (C) www.vishay.com 240 200 Conduction Angle 160 120 ST330SSeries TJ = 125C 80 40 0.3 K/ W 0.4 K/ W 0.6 K /W 1.2 K/ W 0 0 50 100 150 200 250 300 25 350 50 75 100 125 Maximum Allowable Ambient Temperature (C) Average On-state Current (A) 650 600 550 DC 180 120 90 60 30 03 0. W K/ 0. 08 = K/ W 0.1 2K /W ta el -D R 400 350 SA th 500 450 R Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 0.2 300 RMSLimit 250 200 Conduction Period 150 ST330SSeries TJ = 125C 100 50 K/ W 0.3 K/ W 0.4 K/ W 0.6 K /W 1.2 K/ W 0 0 100 200 300 400 500 Average On-state Current (A) 25 600 50 75 100 125 Maximum Allowable Ambient Temp erature (C) Fig. 4 - On-State Power Loss Characteristics Revision: 27-Sep-17 Document Number: 94409 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330SPbF Series www.vishay.com Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 8000 Vishay Semiconductors At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @60 Hz 0.0083 s @50 Hz 0.0100 s 7500 7000 6500 6000 5500 5000 4500 ST330S Series 4000 3500 1 10 100 9000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 8000 Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapp lied 7000 Rated VRRM Reapplied 6000 5000 4000 ST330SSeries 3000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cyc le Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 1000 Tj = 25 C Tj = 125 C ST330S Series 100 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/ W) Fig. 7 - On-State Voltage Drop Characteristics 1 Steady State Value RthJC = 0.10 K/ W (DC Operation) 0.1 0.01 ST330SSeries 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 27-Sep-17 Document Number: 94409 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330SPbF Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) Rec ommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (b) 1 Tj=-40 C Tj=25 C Tj=125 C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 Frequency Limited by PG(AV) Device: ST330SSeries 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 33 0 S 16 P 0 PbF 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = converter grade 5 - S = compression bonding stud 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - P = stud base 3/4"-16UNF-2A threads M = stud base metric threads (M24 x 1.5) 8 - 9 - None = standard production - PbF = lead (Pb)-free 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast-on terminals (gate and auxiliary cathode leads) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95080 Revision: 27-Sep-17 Document Number: 94409 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-209AE (TO-118) DIMENSIONS in millimeters (inches) Ceramic housing 22 (0.87) MAX. 4.3 (0.17) DIA. White gate 10.5 (0.41) NOM. Red silicon rubber 245 (9.65) 10 (0.39) Red cathode 245 (9.65) 255 (10.04) 38 (1.50) MAX. DIA. White shrink 27.5 (1.08) MAX. 47 (1.85) MAX. 21 (0.82) MAX. Red shrink SW 45 3/4"16 UNF-2A (1) 49 (1.92) MAX. Fast-on terminals AMP. 280000-1 REF-250 22 (0. 86 )M IN . 9.5 (0. 3 7) MI N. 4.5 (0.18) MAX. Flexible leads C.S. 50 mm2 (0.078 s.i.) Note (1) For metric device: M24 x 1.5 - length 21 (0.83) maximum Document Number: 95080 Revision: 02-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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