VS-ST330SPbF Series
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Revision: 27-Sep-17 1Document Number: 94409
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Phase Control Thyristors
(Stud Version), 330 A
FEATURES
• Center amplifying gate
• International standard case TO-118 (TO-209AE)
• Hermetic metal case with ceramic insulator
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 330 A
VDRM/VRRM 400 V, 800 V, 1200 V, 1400 V,
1600 V, 2000 V
VTM 1.52 V
IGT 200 mA
TJ-40 °C to +125 °C
Package TO-118 (TO-209AE)
Circuit configuration Single SCR
TO-118 (TO- 209AE)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
330 A
TC75 °C
IT(RMS) 520
A
ITSM
50 Hz 9000
60 Hz 9420
I2t50 Hz 405 kA2s
60 Hz 370
VDRM/VRRM 400 to 2000 V
tqTypical 100 µs
TJ-40 to +125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
VS-ST330S
04 400 500
50
08 800 900
12 1200 1300
14 1400 1500
16 1600 1700
20 2000 2100
VS-ST330SPbF Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature IT(AV)
180° conduction, half sine wave 330 A
75 °C
Maximum RMS on-state current IT(RMS) DC at 75 °C case temperature 520
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
9000
t = 8.3 ms 9420
t = 10 ms 100 % VRRM
reapplied
7570
t = 8.3 ms 7920
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
405
kA2s
t = 8.3 ms 370
t = 10 ms 100 % VRRM
reapplied
287
t = 8.3 ms 262
Maximum I2t for fusing I2tt = 0.1 to 10 ms, no voltage reapplied 4050 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.834 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.898
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.687 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.636
Maximum on-state voltage VTM Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA
Typical latching current IL1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM 1000 A/µs
Typical delay time tdGate current A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 1.0
µs
Typical turn-off time tqITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA
VS-ST330SPbF Series
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Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10.0 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM TJ = TJ maximum, tp 5 ms 3.0 A
Maximum peak positive gate voltage +VGM TJ = TJ maximum, tp 5 ms 20 V
Maximum peak negative gate voltage -VGM 5.0
DC gate current required to trigger IGT
TJ = -40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200 -
mATJ = 25 °C 100 200
TJ = 125 °C 50 -
DC gate voltage required to trigger VGT
TJ = -40 °C 2.5 -
V
TJ = 25 °C 1.8 3
TJ = 125 °C 1.1 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ-40 to +125 °C
Maximum storage temperature range TStg -40 to +150
Maximum thermal resistance, junction to case RthJC DC operation 0.10 K/W
Maximum thermal resistance, case to heatsink RthC-hs Mounting surface, smooth, flat and greased 0.03
Mounting torque, ± 10 % Non-lubricated threads 48.5
(425)
N · m
(lbf · in)
Approximate weight 535 g
Case style See dimension - link at the end of datasheet TO-118 (TO-209AE)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.011 0.008
TJ = TJ maximum K/W
120° 0.013 0.014
90° 0.017 0.018
60° 0.025 0.026
30° 0.041 0.042
VS-ST330SPbF Series
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Revision: 27-Sep-17 4Document Number: 94409
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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350
Maximum Allowable Case Temperature (°C)
30°
60° 90°
120°
180°
Average On-state Current (A)
Conduction Angle
ST3 3 0 S Se r i e s
R (DC) = 0.10 K/ W
thJC
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
DC
30°
60°
90°
120° 180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
ST3 3 0 S Se r i e s
R (DC) = 0.10 K/ W
thJC
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
0.08K
/W
0.2K
/W
0.3K
/W
0.4K
/W
0.6K
/W
1.2K
/W
R=0.03K
/W-DeltaR
thS
A
0.12K
/W
0
40
80
120
160
200
240
280
320
360
400
440
480
0 50 100 150 200 250 300 350
180°
120°
90°
60°
30°
RM S Li m it
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST3 3 0 S Se r i e s
T = 1 2 5 ° C
J
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R = 0.03 K/ W - Delta R
thS
A
0.08K/W
0.12K
/W
0.2K
/W
0.3K
/W
0.4K
/W
0.6K
/W
1.2K
/W
0
50
100
150
200
250
300
350
400
450
500
550
600
650
0 100 200 300 400 500 600
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST3 3 0 S Se r i e s
T = 125°C
J
VS-ST330SPbF Series
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Revision: 27-Sep-17 5Document Number: 94409
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
110100
Number Of Equal Amplitud e Half Cyc le Current Pulses (N)
Pe ak Half Sine Wave On-sta te Current (A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST3 3 0 S Se r i e s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
3000
4000
5000
6000
7000
8000
9000
0.01 0.1 1
Pulse Train Duration (s)
Versus Pulse Train Durat ion. Control
Pe a k Ha lf Si n e Wa v e O n-st a t e C urre nt ( A)
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST330S Series
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
100
1000
10000
0 1 2 3 4 5 6 7
Tj = 25 °C
Tj = 125 °C
ST330S Series
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq u a r e W a v e P u l se D u r a t i o n ( s )
thJC
ST3 3 0 S Se r i e s
St e a d y St a t e V a l u e
R = 0.10 K/ W
(DC Operation)
thJC
Transient Thermal Impedance Z (K/W)
VS-ST330SPbF Series
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Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj = 2 5 ° C
Tj = 1 2 5 ° C
Tj = - 4 0 ° C
(2) (3)
In st a n t a n e o u s G a t e C u rre n t ( A )
Inst a nt a ne o us Ga t e Vo lt a g e (V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/ dt : 20V, 10ohms; t r<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, t p = 0.66m s
D e v i c e : ST3 3 0 S Se r i e s
(4)
- Thyristor
2
- Essential part number
3
- 0 = converter grade
4
- S = compression bonding stud
5
- Voltage code x 100 = VRRM (see Voltage Ratings table)
6
- P = stud base 3/4"-16UNF-2A threads
7
- 0 = eyelet terminals (gate and auxiliary cathode leads)
1 = fast-on terminals (gate and auxiliary cathode leads)
9
8
Device code
51 32 4 6 7 8 9
STVS- 33 0 S 16 P 0 PbF
1- Vishay Semiconductors product
- None = standard production
- PbF = lead (Pb)-free
M = stud base metric threads (M24 x 1.5)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95080
Document Number: 95080 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 02-Aug-07 1
TO-209AE (TO-118)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Note
(1) For metric device: M24 x 1.5 - length 21 (0.83) maximum
Red cathode
Red silicon rubber
10.5 (0.41) NOM.
245 (9.65) ± 10 (0.39)
White gate
4.3 (0.17) DIA.
Ceramic housing
White shrink
47 (1.85)
MAX.
245 (9.65)
255 (10.04)
38 (1.50)
MAX. DIA.
22 (0.87) MAX.
21 (0.82) MAX.
SW 45
Flexible leads
4.5 (0.18) MAX.
C.S. 50 mm2
(0.078 s.i.)
Red shrink
49 (1.92) MAX.
3/4"16 UNF-2A (1)
27.5 (1.08)
MAX.
Fast-on terminals
AMP. 280000-1
REF-250
9.5 (0.37) MIN.
22 (0.86) MIN.
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